ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com GENERAL DESCRIPTION APPLICATIONS The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. • • • • • The ALD1101 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used with an ALD1102, a dual CMOS analog switch can be constructed. In addition, the ALD1101 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1101 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000. • • • • Precision current mirrors Precision current sources Analog switches Choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog inverter PIN CONFIGURATION SOURCE 1 1 8 SUBSTRATE GATE 1 2 7 SOURCE 2 DRAIN 1 3 6 GATE 2 NC 4 5 DRAIN 2 TOP VIEW DA, PA, SA PACKAGE FEATURES • Low threshold voltage of 0.7V • Low input capacitance • Low Vos grades -- 2mV, 5mV, 10mV • High input impedance -- 1012Ω typical • Negative current (IDS) temperature coefficient • Enhancement-mode (normally off) • DC current gain 109 BLOCK DIAGRAM GATE 1 (2) ORDERING INFORMATION Operating Temperature Range* -55°C to +125°C 0°C to +70°C 0°C to +70°C SOURCE 1 (1) DRAIN 1 (3) SUBSTRATE (8) 8-Pin CERDIP Package 8-Pin Plastic Dip Package ALD1101 DA ALD1101A PA ALD1101B PA ALD1101 PA 8-Pin SOIC Package SOURCE 2 (7) DRAIN 2 (5) GATE 2 (6) ALD1101 SA * Contact factory for industrial temperature range. © 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range 13.2V 13.2V 500 mW 0°C to +70°C -55°C to +125°C -65°C to +150°C +260°C PA, SA package DA package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS TA = 25 °C unless otherwise specified Parameter Symbol ALD 1101A Min Typ Max ALD1101B Min Typ Max ALD1101 Min Typ Max Unit Gate Threshold Voltage VT 0.4 0.4 0.4 1.0 V IDS = 10µA VGS = V DS 10 mV IDS = 100µA VGS = V DS Offset Voltage VGS1 - VGS2 VOS IDS (ON) Transconductance Gfs 1.0 0.7 2 Gate Threshold TCVT Temperature Drift On Drain Current 0.7 1.0 0.7 5 -1.2 -1.2 -1.2 Test Conditions mV/°C 25 40 25 40 25 40 mA VGS = VDS = 5V 5 10 5 10 5 10 mmho VDS = 5V IDS= 10mA Mismatch ∆Gfs 0.5 0.5 0.5 % Output Conductance GOS 200 200 200 µmho VDS = 5V IDS = 10mA Drain Source ON Resistance RDS(ON) 50 Ω VDS = 0.1V VGS = 5V Drain Source ON Resistance Mismatch ∆RDS(ON) 0.5 % VDS = 0.1V VGS = 5V Drain Source Breakdown Voltage BVDSS V IDS = 10µA VGS =0V Off Drain Current IDS(OFF) Gate Leakage Current Input Capacitance ALD1101A/ALD1101B ALD1101 75 50 75 50 0.5 12 75 0.5 12 12 0.1 4 4 0.1 4 4 0.1 4 4 nA µA VDS =12V VGS = 0V TA = 125°C IGSS 1 50 10 1 50 10 1 50 10 pA nA VDS =0V VGS =12V TA = 125°C CISS 6 10 6 10 6 10 pF Advanced Linear Devices 2 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT CHARACTERISTICS VGS = 12V VBS = 0V TA = 25°C 10V 120 8V 80 6V 40 4V VBS = 0V TA = 25°C DRAIN-SOURCE CURRENT (mA) DRAIN -SOURCE CURRENT (mA) 8 160 2V 2 4 6 8 10 6V 4 4V 2V 0 -4 0 0 -8 -160 12 -80 FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE 80 160 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 20 VBS = 0V f = 1KHz 5 x104 IDS = 10mA 2 x104 TA = +25°C TA = +125°C 1 x104 5 x103 2 x103 VGS = VDS TA = 25°C 15 VBS = 0V -4V -2V -6V 10 -8V -10V 5 -12V IDS = 1mA 1 x103 0 0 2 4 6 8 10 12 0 0.8 RDS (ON) vs. GATE - SOURCE VOLTAGE OFF - DRAIN SOURCE CURRENT (A) 10000 VDS = 0.2V VBS = 0V 1000 TA = +125°C 100 TA = +25°C 10 0 2 4 6 8 10 10X10-6 2.4 3.2 4.0 OFF DRAIN - CURRENT vs. TEMPERATURE VDS = +12V VGS = VBS = 0V 10X10-9 10X10-12 12 GATE SOURCE VOLTAGE (V) ALD1101A/ALD1101B ALD1101 1.6 GATE - SOURCE VOLTAGE (V) DRAIN -SOURCE VOLTAGE (V) DRAIN - SOURCE ON RESISTANCE (Ω) 0 DRAIN -SOURCE VOLTAGE (mV) DRAIN-SOURCE CURRENT (µA) FORWARD TRANSCONDUCTANCE (µmho) DRAIN-SOURCE VOLTAGE (V) 1 x105 VGS = 12V -50 -25 0 +25 +50 +75 +100 +125 TEMPERATURE (°C) Advanced Linear Devices 3 ALD1101A/ALD1101B ALD1101 Advanced Linear Devices 4