ALD ALD1101A Dual n-channel matched mosfet pair Datasheet

ADVANCED
LINEAR
DEVICES, INC.
ALD1101A/ALD1101B
ALD1101
DUAL N-CHANNEL MATCHED MOSFET PAIR
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
GENERAL DESCRIPTION
APPLICATIONS
The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancementmode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.
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The ALD1101 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1102, a dual CMOS analog switch can be constructed.
In addition, the ALD1101 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
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Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier
input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
PIN CONFIGURATION
SOURCE 1
1
8
SUBSTRATE
GATE 1
2
7
SOURCE 2
DRAIN 1
3
6
GATE 2
NC
4
5
DRAIN 2
TOP VIEW
DA, PA, SA PACKAGE
FEATURES
• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos grades -- 2mV, 5mV, 10mV
• High input impedance -- 1012Ω typical
• Negative current (IDS) temperature
coefficient
• Enhancement-mode (normally off)
• DC current gain 109
BLOCK DIAGRAM
GATE 1 (2)
ORDERING INFORMATION
Operating Temperature Range*
-55°C to +125°C
0°C to +70°C
0°C to +70°C
SOURCE 1 (1)
DRAIN 1 (3)
SUBSTRATE (8)
8-Pin
CERDIP
Package
8-Pin
Plastic Dip
Package
ALD1101 DA
ALD1101A PA
ALD1101B PA
ALD1101 PA
8-Pin
SOIC
Package
SOURCE 2 (7)
DRAIN 2 (5)
GATE 2 (6)
ALD1101 SA
* Contact factory for industrial temperature range.
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range
13.2V
13.2V
500 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
PA, SA package
DA package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25 °C unless otherwise specified
Parameter
Symbol
ALD 1101A
Min Typ
Max
ALD1101B
Min Typ Max
ALD1101
Min Typ Max
Unit
Gate Threshold
Voltage
VT
0.4
0.4
0.4
1.0
V
IDS = 10µA VGS = V DS
10
mV
IDS = 100µA VGS = V DS
Offset Voltage
VGS1 - VGS2
VOS
IDS (ON)
Transconductance Gfs
1.0
0.7
2
Gate Threshold
TCVT
Temperature Drift
On Drain Current
0.7
1.0
0.7
5
-1.2
-1.2
-1.2
Test
Conditions
mV/°C
25
40
25
40
25
40
mA
VGS = VDS = 5V
5
10
5
10
5
10
mmho
VDS = 5V IDS= 10mA
Mismatch
∆Gfs
0.5
0.5
0.5
%
Output
Conductance
GOS
200
200
200
µmho
VDS = 5V IDS = 10mA
Drain Source
ON Resistance
RDS(ON)
50
Ω
VDS = 0.1V VGS = 5V
Drain Source
ON Resistance
Mismatch
∆RDS(ON)
0.5
%
VDS = 0.1V VGS = 5V
Drain Source
Breakdown
Voltage
BVDSS
V
IDS = 10µA VGS =0V
Off Drain Current
IDS(OFF)
Gate Leakage
Current
Input
Capacitance
ALD1101A/ALD1101B
ALD1101
75
50
75
50
0.5
12
75
0.5
12
12
0.1
4
4
0.1
4
4
0.1
4
4
nA
µA
VDS =12V VGS = 0V
TA = 125°C
IGSS
1
50
10
1
50
10
1
50
10
pA
nA
VDS =0V VGS =12V
TA = 125°C
CISS
6
10
6
10
6
10
pF
Advanced Linear Devices
2
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
VGS = 12V
VBS = 0V
TA = 25°C
10V
120
8V
80
6V
40
4V
VBS = 0V
TA = 25°C
DRAIN-SOURCE CURRENT
(mA)
DRAIN -SOURCE CURRENT
(mA)
8
160
2V
2
4
6
8
10
6V
4
4V
2V
0
-4
0
0
-8
-160
12
-80
FORWARD TRANSCONDUCTANCE
vs. DRAIN-SOURCE VOLTAGE
80
160
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
20
VBS = 0V
f = 1KHz
5 x104
IDS = 10mA
2 x104
TA = +25°C
TA = +125°C
1 x104
5 x103
2 x103
VGS = VDS
TA = 25°C
15
VBS = 0V
-4V
-2V
-6V
10
-8V
-10V
5
-12V
IDS = 1mA
1 x103
0
0
2
4
6
8
10
12
0
0.8
RDS (ON) vs. GATE - SOURCE VOLTAGE
OFF - DRAIN SOURCE CURRENT
(A)
10000
VDS = 0.2V
VBS = 0V
1000
TA = +125°C
100
TA = +25°C
10
0
2
4
6
8
10
10X10-6
2.4
3.2
4.0
OFF DRAIN - CURRENT vs.
TEMPERATURE
VDS = +12V
VGS = VBS = 0V
10X10-9
10X10-12
12
GATE SOURCE VOLTAGE (V)
ALD1101A/ALD1101B
ALD1101
1.6
GATE - SOURCE VOLTAGE (V)
DRAIN -SOURCE VOLTAGE (V)
DRAIN - SOURCE ON RESISTANCE
(Ω)
0
DRAIN -SOURCE VOLTAGE (mV)
DRAIN-SOURCE CURRENT
(µA)
FORWARD TRANSCONDUCTANCE
(µmho)
DRAIN-SOURCE VOLTAGE (V)
1 x105
VGS = 12V
-50
-25
0
+25
+50
+75
+100 +125
TEMPERATURE (°C)
Advanced Linear Devices
3
ALD1101A/ALD1101B
ALD1101
Advanced Linear Devices
4
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