CXG1158K Power Amplifier Module for JCDMA Description The CXG1158K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process. 10 pin LCC (Ceramic) Features • Single power supply operation: VDD1 = VDD2 = 3.5V (High Power Mode), 1.3V (Low Power Mode 1), 1.0V (Low Power Mode 2), VGG = 2.7V • Ultrasmall package: 0.06cc (6.2mm × 6.2mm × 1.55mm) • High efficiency: ηadd = 41%@POUT = 27.5dBm (High Power Mode), ηadd = 23%@POUT = 15dBm (Low Power Mode 1) • Output power (high/low mode switching supported): POUT = 18 to 27.5dBm: High Power Mode, POUT = 15 to 18dBm: Low Power Mode 1, POUT ≤ 15dBm: Low Power Mode 2 • Gain: Gp = 29dB (@900MHz) Applications Power amplifier for JCDMA system cellular phones Structure p-Gate HFET module Absolute Maximum Ratings • Operating ambient temperature • Operating case temperature • Storage temperature • Bias voltage • Bias voltage • Input power Ta –30 to +60 °C Tcase –30 to +90 °C Tstg –30 to +125 °C VDD1, VDD2 6 V 3.3 V VGG (@VDD1 = VDD2 ≤ 3.5V) PIN 8 dBm Recommended Bias Voltage Conditions • VDD1 = VDD2 = 1.0 to 4.2V • VGG = 2.7V ± 1% GaAs module is ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E03511-PS