MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol Value Unit IT(RMS) 50-70-85 A V DRM/VRRM 800 and 1200 V IGT 50 and 100 mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller. The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734). ISOTOP® PIN CONNECTIONS ABSOLUTE RATINGS (limiting values) Value Symbol IT(RMS) IT(AV) ITSM IFSM I²t dI/dt IGM PG(AV) Tstg Tj VRGM Parameter Unit RMS on-state current Average on-state current (Single phase-circuit, 180° conduction angle per device) tp = 8.3 ms Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 10 ms Tc = 85°C Tj = 25°C 35 50 80 50 70 85 A 25 35 55 A A 420 630 730 400 600 700 I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns tp = 10 ms Tj = 25°C 800 1800 2450 A2S F = 60 Hz Tj = 125°C 50 A/µs Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C 5 V Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse SCR gate voltage 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com 1/7 MDS35 / 50 / 80 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SCR MDS Symbol Test Conditions Unit 35 I GT VD = 12 V RL = 30 Ω VGT VGD VD = VDRM RL = 3.3 kΩ IH IT = 500 mA Gate open IL IG = 1.2 I GT dV/dt VTM VD = 67% VDRM Gate open ITM = 80 A tp = 380 µs ITM = 110 A tp = 380 µs ITM = 170 A tp = 380 µs Tj = 125°C Tj = 125°C Tj = 25°C 5 10 MAX. 50 100 mA MAX. 1.3 V MIN. 0.2 V MAX. 80 mA MAX. 120 mA MIN. 1000 V/µs 1.7 - - - 1.75 - - - 1.75 MAX. Threshold voltage Tj = 125°C MAX. Rd Dynamic resistance Tj = 125°C MAX. Tj = 25°C MAX. VDRM / V RRM RATED 80 MIN. Vt0 IDRM IRRM 50 V 0.85 11 7.0 Tj = 125°C V 5.5 mΩ 20 µA 10 mA DIODE MDS Symbol VF Test Conditions Unit IF = 80 A IF = 110 A Tj = 25°C MAX. IF = 170 A Vt0 Threshold voltage Tj = 125°C MAX. Rd Dynamic resistance Tj = 125°C MAX. IR VR = VRRM Tj = 25°C MAX. Tj = 125°C 2/7 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com 35 50 80 1.7 - - - 1.7 - - - 1.7 0.85 11 7.0 V V 5.5 mΩ 20 µA 10 mA MDS35 / 50 / 80 Series THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case (DC) Value Unit MDS35 1.00 °C/W MDS50 0.75 MDS80 0.45 PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity 800 V 1200 V MDS35-xxx X X 50 mA MDS50-xxx X X 50 mA MDS80-xxx X X 150 mA Package ISOTOPTM ORDERING INFORMATION SCR MODULE SERIES VOLTAGE: 800: 800V 1200: 1200V CURRENT: 35: 50A 50: 70A 80: 85A OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode MDS35-xxx MDS35-xxx 27.0 g 10 Tube MSDS50-xxx MDS50-xxx 27.0 g 10 Tube MDS80-xxx MDS80-xxx 27.0 g 10 Tube Note: xxx = voltage 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com 3/7 MDS35 / 50 / 80 Series Fig. 1-1: Maximum average power dissipation versus average on-state current (thyristor or diode, sinusoïdal waveform). Fig. 1-2: Maximum average power dissipation versus average on-state current (thyristor or diode, rectangular waveform). Fig. 1-3: Maximum total power dissipation versus output current on resistive or inductive load (Single phase bridge rectifier, two packages). Fig. 1-4: Maximum total power dissipation versus output current (Three phase bridge rectifier, three packages). Fig. 2-1: Average on-state current versus case temperature (thyristor or diode, sinusoïdal waveform). Fig. 2-2: Average on-state current versus case temperature (thyristor or diode, rectangular waveform). 4/7 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com MDS35 / 50 / 80 Series Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5-1: Surge peak on-state current versus number of cycles (MDS35 and MDS50). Fig. 5-2: Surge peak on-state current versus number of cycles (MDS80). Fig. 6-1: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t (MDS35 and MDS50). Fig. 6-2: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t (MDS80). 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com 5/7 MDS35 / 50 / 80 Series Fig. 7-1: On-state characteristics (thyristor or diode, maximum values) (MDS35). Fig. 7-2: On-state characteristics (thyristor or diode, maximum values) (MDS50). Fig. 7-3: On-state characteristics (thyristor or diode, maximum values) (MDS80). 6/7 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com MDS35 / 50 / 80 Series PACKAGE MECHANICAL DATA ISOTOP™ DIMENSIONS REF. Millimeters Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S ■ ■ Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 typ. 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 Recommended torque value: 1.3 Nm (max. 1.5 Nm) for the 6 x M4 screws (2 x M4 screws recommended for mounting the package on the heatsink and the 4 provided screws. The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min. and 2.2 mm max. 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ 7/7 www.kersemi.com