Foshan BR50N10 N-channel mosfet in a to-220 plastic package Datasheet

BR50N10
Rev.D Nov.-2015
描述
/
DATA SHEET
Descriptions
TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征
/ Features
RDS(on)小,门电荷低,Crss 小,开关速度快。
Low RDS(on), low gate charge, low Crss, fast switching.
用途
/
Applications
用于低压电路如:汽车电路、DC/DC 转换、便携式产品的电源高效转换。
Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency
switching for power management in portable and battery operated products.
内部等效电路
引脚排列
1
2
/ Equivalent Circuit
/ Pinning
3
PIN1:G
放大及印章代码
PIN 2:D
PIN 3:S
/ hFE Classifications & Marking
见印章说明。 See Marking Instructions.
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BR50N10
Rev.D Nov.-2015
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Drain-Source Voltage
符号
Symbol
VDS
数值
Rating
100
单位
Unit
V
Drain Current
ID(Tc=25℃)
50
A
Drain Current
ID(Tc=100℃)
35
A
Peak Drain Current
IDM
200
A
Gate-Source Voltage
VGS
±20
V
Repetitive Avalanche Energy
EAS
300
mJ
VDGR
100
V
150
W
Junction Temperature Range
Ptot(Tc=25℃)
Tj
150
℃
Storage Temperature Range
Tstg
-55~150
℃
Drain-gate Voltage
Total Power Dissipation
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
Drain-Source Breakdown Voltage
VDSS
VGS=0V
ID=250μA
VDS=84V
VGS=0V
Zero Gate Voltage Drain Current
IDSS
VDS=84V
Ta=125℃
VGS=0V
Gate-Body Leakage Current
Forward
IGSS
VGS=±20V
VDS=0V
VGS(th)
VDS=VGS
ID=250μA
gfs
VDS=25V
ID=20A
20
Static Drain-Source
On-Resistance
RDS(on)
VGS=10V
ID=20A
0.024
Forward On Voltage
VSD
VGS=0V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
112
Turn-On Delay Time
td(on)
28
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Gate Threshold Voltage
Forward Transconductance
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
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测试条件
Test Conditions
最小值 典型值
Min
Typ
最大值
Max
100
单位
Unit
V
1.0
10
2
2.8
μA
±0.1
μA
4
V
S
0.028
Ω
1.3
V
1780
VGS=0V
f=1.0MHz
ID=20A
VGS=10V
VDS=25V
VDD=50V
RG=4.7Ω
265
pF
63
ns
84
28
60
ID=40A
VGS=10V
VDD=15V
10
80
nC
23
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BR50N10
Rev.D Nov.-2015
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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BR50N10
Rev.D Nov.-2015
外形尺寸图
DATA SHEET
/ Package Dimensions
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BR50N10
Rev.D Nov.-2015
印章说明
/
DATA SHEET
Marking Instructions
BR
****
50N10

说明:
BR:
为公司代码
50N10: 
为型号代码
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
50N10:
****:
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Product Type.

Lot No. Code, code change with Lot No.
5/6
BR50N10
Rev.D Nov.-2015
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
TO-220/F
套管包装
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
散件包装
TO-220/F
时间:10±1 sec.
/ BULK
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Bag
只/袋
Bags/Inner Box
袋/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Bag 袋
Inner Box 盒
Outer Box 箱
200
10
2,000
5
10,000
135×190
237×172×102
560×245×195
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
50
20
1,000
5
5,000
532×31.4×5.5
555×164×50
575×290×180
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
/ Notices
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