Nell MBR3045CT Dual common cathode schottky rectifier, Datasheet

RoHS
RoHS
MBR3045CT Series
SEMICONDUCTOR
Nell Semiconductors
Dual Common Cathode Schottky Rectifier,
Available
RoHS*
30A (15A x2), 45V
COMPLIANT
FEATURES
150°C T J operation
High frequency operation
CASE
PIN 2
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness, long
term reliability and overvoltage protection
Compliant to RoHS
Designed and qualified according to
JEDEC-JESD47
Solder bath temperature 275°C maximum,
10 s per JESD 22B-106 (for TO-220AB and
ITO-220AB package)
1
2
3
PIN 1
PIN 3
TO-220AB (MBR3045CT)
HEATSINK
K
K
DESCRIPTION
The MBR3045CT Schottky rectifier has been
optimized for low reverse leakage at high
temperature. The proprietary barrier technology
allows for reliable operation up to 150°C junction
temperature.
1
2
PIN 1
PIN 2
TO-263AB (MBRH3045CT)
APPLICATIONS
Switching mode power supplies
DC to DC converters
Freewheeling diodes
Reverse battery protection.
PRODUCT SUMMARY
MECHANICAL DATA
l F(AV)
Case: TO-220AB, TO-263AB
Molding compound meets UL 94 V-O
flammability rating
Terminals: Mat tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
15A x 2
VR
45V
V F at l F
0.57V
l RM max .
100mA at 125°C
T J max.
150°C
Diode variation
Dual dice, Common cathode
E AS
10 mJ
MAJOR RATINGS AND CHARACTERISTICS
VALUE
UNIT
15 x 2
A
45
V
t p = 5 μs sine
1020
A
VF
15 A pk , T J = 125°C
0.57
V
TJ
Range
-65 to 150
°C
SYMBOL
l F(AV)
CHARACTERISTICS
Rectangular waveform
V RRM
l FSM
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Page 1of 5
MBR3045CT Series
SEMICONDUCTOR
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VOLTAGE RATINGS
SYMBOL
PARAMETER
Maximum DC reverse voltage
VALUE
UNIT
45
V
VR
Maximum working peak reverse voltage
V RWM
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average
forward current
per device
per diode
Peak repetitive forward current per leg
Non-repetitive peak surge current
VALUE
TEST CONDITIONS
UNIT
30
l F(AV)
T C = 123°C, rated V R
A
15
l FRM
l FSM
Rated V R , square wave, 20KHz, T C = 123C°
30
Following any rated load
5 μs sine or 3 μs rect.pulse condition and with rated
V RRM applied
A
1020
A
Surge applied at rated load condition half wave
single phase 60 Hz
200
Non-repetitive avalanche energy
E AS
T J = 25°C, l AS = 2.0A, L = 5mH
Repetitive avalanche current
l AR
Current decaying linearly to zero in 1 μs
Frequency limited by T J maximum V A = 1.5 x V R typical
10
mJ
2
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
I F = 15A
I F = 30A
Maximum forward voltage drop
VALUE
UNIT
0.65
T J = 25°C
0.8
V FM (1)
V
I F = 15A
0.57
T J = 125°C
I F = 30A
Maximum instantaneous reverse current
l RM (1)
0.7
T J = 25°C
1
Rated DC voltage
100
650
pF
8
nH
10000
V/µs
Maximum junction capacitance
CT
V R = 5 V DC (test signal range
100 kHz to 1 MHZ) 25°C
Typical series inductance
LS
Measured from top of terminal to
mounting plane
Maximum voltage rate of change
dV/dt
Rated V R
Note
(1) Pulse width < 300 µs, duty cycle < 2%
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mA
T J = 125°C
Page 2 of 5
MBR3045CT Series
SEMICONDUCTOR
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Nell Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
SYMBOL
PARAMETER
VALUE
TEST CONDITIONS
MBR
UNIT
MBRH
Maximum junction temperature range
TJ
-65 to 150
Maximum storage temperature range
T stg
-65 to 175
°C
Maximum thermal resistance,
junction to case
R thJC
DC operation
R thCS
Mounting surface, smooth
and greased
1.5
1.5
°C/W
Typical thermal resistance,
case to heatsink
0.5
0.5
2
1.4
g
0.07
0.05
oz.
minimum
6 (5)
-
maximum
12 (10)
-
kgf . cm
(lbf . in)
Approximate weight
Mounting torque
Ordering Information Table
Device code
MBR
H
30
45
CT
1
2
3
4
5
1
-
Schottky MBR series
2
-
Package outline
"none" for TO-220AB
"H" for TO-263AB (D 2 PAK)
3
-
Current rating (30 = 30A, 15A x 2)
4
-
Voltage ratings, 45 =45V
5
-
Circuit configuration, Center tap common cathode,
TO-220 series package
Fig.2 Typical values of reverse current vs.
reverse voltage (Per Leg)
100
1000
Reverse current, l R (mA)
lnstantaneous forward current, I F (A)
Fig.1 Maximum forward voltage drop
characteristics (Per Leg)
10
T J =150°
T J =125°
T J =25°
1
0
0.3
0.6
0.9
1.2
Forward voltage drop, V FM (V)
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T J =125°
10
T J =100°
T J =75°
1
T J =50°
0.1
T J =25°
0.01
0.001
0
1.5
T J =150°
100
10
20
30
40
Reverse voltage, V R (V)
Page 3 of 5
50
MBR3045CT Series
SEMICONDUCTOR
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Nell Semiconductors
Fig.3 Typical junction capacitance vs.
reverse voltage (Per Leg)
Fig.4 Maximum allowable case temperature vs.
average forward current (Per Leg)
T J =25°
100
0
10
20
30
150
Allowable case temperature ( ° C)
Junction capacitance, C T (pF)
1000
40
140
DC
130
Square wave (D = 0.50)
Rated V R applied
120
110
See note (1)
100
50
5
0
10
15
20
25
Average forward current, l F(AV) (A)
Reverse voltage, V R (V)
Fig.5 Maximum thermal impedance R th(j-c) characteristics (Per Leg)
Thermal lmpedance, R th(j-c) (°C/W)
10
1
P DM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
t1
t2
Notes:
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
.
1. Duty Factor D =t 1 /t 2
2.Peak T J = PDM x R th(j-c) +T C
0.001
0.01
0.1
10
1
100
Rectangular pulse duration, t 1 (s)
Fig.7 Maximum non-repetitive surge current
(Per Leg)
Non-repetitive surge current, l FSM (A)
Fig.6 Forward power loss characteristics
(Per Leg)
Average power loss (W)
15
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
12
9
RMS limit
6
DC
3
0
0
2
10
15
20
25
Average forward current, l F(AV) (A)
At any rated load condition
and with rated V RRM applied
following surge
100
10
100
1000
Square wave pulse duration, t p ( µ s)
Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6);
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R
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1000
Page 4of 5
10000
MBR3045CT Series
SEMICONDUCTOR
RoHS
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Nell Semiconductors
TO-220AB(MBR3045CT)
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
CASE
PIN 2
All dimensions in millimeters (inches)
PIN 1
PIN 3
TO-263AB(MBRH3045CT)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
2
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
2.79 (0.110)
HEATSINK
K
All dimensions in millimeters (inches)
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Page 5of 5
PIN 1
PIN 2
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