AOSMD AO3413L 20v p-channel mosfet Datasheet

AO3413
20V P-Channel MOSFET
General Description
Features
The AO3413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
VDS = -20V
ID = -3A
RDS(ON) < 80mΩ
RDS(ON) < 100mΩ
RDS(ON) < 130mΩ
(VGS = -4.5V)
(VGS =- 4.5V)-15
(VGS = -2.5V)
(VGS = -1.8V)
SOT23
Top View
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
B
Power Dissipation
Junction and Storage Temperature Range
Rev 9: July 2010
A
1.4
W
0.9
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A Steady-State
Steady-State
Maximum Junction-to-Lead C
V
-15
PD
TA=70°C
±8
-2.4
IDM
TA=25°C
A
Units
V
-3
ID
TA=70°C
Maximum
-20
Symbol
RθJA
RθJL
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-55 to 150
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
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AO3413
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
BVDSS
Parameter
Drain-Source Breakdown Voltage
Conditions
ID=-250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.4
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
Min
-20
VDS=-20V, VGS=0V
TJ=55°C
Static Drain-Source On-Resistance
70
100
mΩ
85
130
mΩ
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-3A
mΩ
12
-0.7
560
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
V
A
VGS=-2.5V, ID=-2.6A
IS=-1A,VGS=0V
Gate resistance
-1
VGS=-1.8V, ID=-1A
Diode Forward Voltage
Rg
-0.65
nA
80
Forward Transconductance
Reverse Transfer Capacitance
µA
115
VSD
Output Capacitance
-1
-5
56
gFS
Coss
Units
V
80
TJ=125°C
VDS=-5V, ID=-3A
Crss
Max
±100
VGS=-4.5V, ID=-3A
RDS(ON)
Typ
S
-1
V
-1.4
A
745
pF
80
pF
70
pF
15
23
Ω
8.5
11
nC
1.2
nC
Qgd
Gate Drain Charge
2.1
nC
tD(on)
Turn-On DelayTime
7.2
ns
tr
Turn-On Rise Time
36
ns
tD(off)
Turn-Off DelayTime
53
ns
tf
trr
Turn-Off Fall Time
56
ns
IF=-3A, dI/dt=100A/µs
37
Qrr
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
27
Body Diode Reverse Recovery Time
VGS=-4.5V, VDS=-10V, RL=3.3Ω,
RGEN=6Ω
49
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
12
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 9: July 2010
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Page 2 of 5
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
VDS=-5V
-3.0V
-4.5V
20
-2.5V
15
-ID(A)
-ID (A)
15
-2.0V
10
-15
10
125°C
5
VGS=-1.5V
5
25°C
0
0
0
1
2
3
4
5
0
-VDS (Volts)
Figure 1: On-Region Characteristics
RDS(ON) (mΩ
Ω)
130
VGS=-1.8V
110
90
VGS=-2.5V
70
VGS=-4.5V
50
1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
3
VGS=-2.5V
ID=-2.6A
1.4
VGS=-4.5V
ID=-3A
1.2
VGS=-1.8V
ID=-1A
1
0.8
0
2
4
6
8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
180
1E+02
ID=-3A
160
1E+01
12
140
1E+00
120
-IS (A)
RDS(ON) (mΩ
Ω)
1
1.6
Normalized On-Resistance
150
0.5
125°C
100
125°C
1E-01
1E-02
25°C
80
1E-03
60
25°C
1E-04
40
0
2
4
6
8
1E-05
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 9: July 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
VDS=-10V
ID=-3A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
800
Ciss
600
-15
400
1
Coss
200
0
Crss
0
0
2
4
6
8
10
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
15
20
1000
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10µs
100
100µs
Power (W)
-ID (Amps)
10.00
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
1ms
1.00
10ms
0.1s
TJ(Max)=150°C
TA=25°C
0.10
10
1
1s
DC
0.1
0.01
0.1
1
10
0.00001
100
-VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
12
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev 9: July 2010
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Page 4 of 5
AO3413
G ate C harge Test C ircuit & W aveform
V gs
Vgs
Qg
-10V
-
-
V DC
Qgd
+
+
DUT
Qgs
V
Vds
ds
VD C
V gs
Vgs
Ig
C harge
Resistive Switching Test Circuit & W aveform s
RL
Vds
t off
t on
td(on)
d(on )
Vgs
-
D UT
Vgs
t dd(off)
(o ff)
tr
90%
Vdd
VDC
tf
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 9: July 2010
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5
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