AO3413 20V P-Channel MOSFET General Description Features The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. VDS = -20V ID = -3A RDS(ON) < 80mΩ RDS(ON) < 100mΩ RDS(ON) < 130mΩ (VGS = -4.5V) (VGS =- 4.5V)-15 (VGS = -2.5V) (VGS = -1.8V) SOT23 Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current B Power Dissipation Junction and Storage Temperature Range Rev 9: July 2010 A 1.4 W 0.9 TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Steady-State Maximum Junction-to-Lead C V -15 PD TA=70°C ±8 -2.4 IDM TA=25°C A Units V -3 ID TA=70°C Maximum -20 Symbol RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 Min -20 VDS=-20V, VGS=0V TJ=55°C Static Drain-Source On-Resistance 70 100 mΩ 85 130 mΩ IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-3A mΩ 12 -0.7 560 SWITCHING PARAMETERS Total Gate Charge Qg Qgs V A VGS=-2.5V, ID=-2.6A IS=-1A,VGS=0V Gate resistance -1 VGS=-1.8V, ID=-1A Diode Forward Voltage Rg -0.65 nA 80 Forward Transconductance Reverse Transfer Capacitance µA 115 VSD Output Capacitance -1 -5 56 gFS Coss Units V 80 TJ=125°C VDS=-5V, ID=-3A Crss Max ±100 VGS=-4.5V, ID=-3A RDS(ON) Typ S -1 V -1.4 A 745 pF 80 pF 70 pF 15 23 Ω 8.5 11 nC 1.2 nC Qgd Gate Drain Charge 2.1 nC tD(on) Turn-On DelayTime 7.2 ns tr Turn-On Rise Time 36 ns tD(off) Turn-Off DelayTime 53 ns tf trr Turn-Off Fall Time 56 ns IF=-3A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 27 Body Diode Reverse Recovery Time VGS=-4.5V, VDS=-10V, RL=3.3Ω, RGEN=6Ω 49 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA 12 curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 9: July 2010 www.aosmd.com Page 2 of 5 AO3413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 VDS=-5V -3.0V -4.5V 20 -2.5V 15 -ID(A) -ID (A) 15 -2.0V 10 -15 10 125°C 5 VGS=-1.5V 5 25°C 0 0 0 1 2 3 4 5 0 -VDS (Volts) Figure 1: On-Region Characteristics RDS(ON) (mΩ Ω) 130 VGS=-1.8V 110 90 VGS=-2.5V 70 VGS=-4.5V 50 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 3 VGS=-2.5V ID=-2.6A 1.4 VGS=-4.5V ID=-3A 1.2 VGS=-1.8V ID=-1A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 180 1E+02 ID=-3A 160 1E+01 12 140 1E+00 120 -IS (A) RDS(ON) (mΩ Ω) 1 1.6 Normalized On-Resistance 150 0.5 125°C 100 125°C 1E-01 1E-02 25°C 80 1E-03 60 25°C 1E-04 40 0 2 4 6 8 1E-05 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 9: July 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 AO3413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-10V ID=-3A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 800 Ciss 600 -15 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 15 20 1000 RDS(ON) limited TJ(Max)=150°C TA=25°C 10µs 100 100µs Power (W) -ID (Amps) 10.00 10 -VDS (Volts) Figure 8: Capacitance Characteristics 1ms 1.00 10ms 0.1s TJ(Max)=150°C TA=25°C 0.10 10 1 1s DC 0.1 0.01 0.1 1 10 0.00001 100 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 12 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Rev 9: July 2010 www.aosmd.com Page 4 of 5 AO3413 G ate C harge Test C ircuit & W aveform V gs Vgs Qg -10V - - V DC Qgd + + DUT Qgs V Vds ds VD C V gs Vgs Ig C harge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) d(on ) Vgs - D UT Vgs t dd(off) (o ff) tr 90% Vdd VDC tf + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 9: July 2010 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5