ON MCR106-6 Sensitive gate silicon controlled rectifier Datasheet

MCR106−6, MCR106−8
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume consumer applications
such as temperature, light and speed control; process and remote control,
and warning systems where reliability of operation is important.
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Features
•
•
•
•
•
SCRs
4 AMPERES RMS
400 thru 600 VOLTS
Glass-Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
Pb−Free Packages are Available*
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave 50 to 60
Hz, Gate Open)
MCR106−6
MCR106−8
VDRM,
VRRM
On-State RMS Current, (TC = 93°C)
(180° Conduction Angles)
IT(RMS)
4.0
A
Average On−State Current,
(180° Conduction Angles; TC = 93°C)
IT(AV)
2.55
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
ITSM
25
A
Circuit Fusing Considerations, (t = 8.3 ms)
I2t
2.6
A2s
PGM
0.5
W
PG(AV)
0.1
W
Forward Peak Gate Current,
(TC = 93°C, Pulse Width v 1.0 ms)
IGM
0.2
A
Peak Reverse Gate Voltage,
(TC = 93°C, Pulse Width v 1.0 ms)
VRGM
6.0
V
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Forward Peak Gate Power,
(TC = 93°C, Pulse Width v 1.0 ms)
Forward Average Gate Power,
(TC = 93°C, t = 8.3 ms)
Value
Unit
V
400
600
3
2 1
TO−225AA
CASE 77
STYLE 2
MARKING DIAGRAM
YWW
CR
106−xG
Y
= Year
WW
= Work Week
CR106−x = Device Code
x = 6 or 8
G
= Pb−Free Package
Mounting Torque (Note 2)
−
6.0
in. lb.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200-F006 or
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. (See AN209B). For soldering purposes (either terminal connection
or device mounting), soldering temperatures shall not exceed +200°C. For
optimum results, an activated flux (oxide removing) is recommended.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
ORDERING INFORMATION
Publication Order Number:
MCR106/D
MCR106−6, MCR106−8
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
3.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
75
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
200
mA
mA
−
−
2.0
V
−
−
−
−
200
500
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; RGK = 1000 Ohms)
IDRM, IRRM
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 3)
(ITM = 4 A Peak)
VTM
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 7 Vdc, RL = 100 Ohms)
(TC = −40°C)
IGT
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 7 Vdc, RL = 100 Ohms)
VGT
−
−
1.0
V
Gate Non-Trigger Voltage (Note 4)
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 110°C)
VGD
0.2
−
−
V
IH
−
−
5.0
mA
dv/dt
−
10
−
V/ms
Holding Current
(VAK = 7 Vdc, Initiating Current = 200 mA, Gate Open)
mA
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
(TJ = 110°C)
3. Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
4. RGK current is not included in measurement.
ORDERING INFORMATION
Device
Package
Shipping
MCR106−6
TO−225AA
500 Units / Box
MCR106−6G
TO−225AA
(Pb−Free)
500 Units / Box
MCR106−8
TO−225AA
500 Units / Box
MCR106−8G
TO−225AA
(Pb−Free)
500 Units / Box
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2
MCR106−6, MCR106−8
Voltage Current Characteristic of SCR
+ Current
Anode +
VTM
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
Anode −
110
TA , MAXIMUM ALLOWABLE AMBIENTTEMPERATURE ( °C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE °( C)
CURRENT DERATING
110
106
90
102
0
98
α π
f = 60 Hz
0
70
94
90
α = 30°
86
82
0
0.4
0.8
1.2 1.6
2.0 2.4
2.8
3.2
IT(AV), AVERAGE FORWARD CURRENT (AMP)
3.6
π
f = 60 Hz
50
dc
60° 90° 120° 180°
α
4.0
30
α = 30°
0
Figure 1. Maximum Case Temperature
0.1
60°
90° 180°
dc
0.2
0.3
0.4
0.5
0.6
0.7
IT(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 2. Maximum Ambient Temperature
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3
0.8
MCR106−6, MCR106−8
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MCR106/D
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