MCR106−6, MCR106−8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. http://onsemi.com Features • • • • • SCRs 4 AMPERES RMS 400 thru 600 VOLTS Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pb−Free Packages are Available* G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave 50 to 60 Hz, Gate Open) MCR106−6 MCR106−8 VDRM, VRRM On-State RMS Current, (TC = 93°C) (180° Conduction Angles) IT(RMS) 4.0 A Average On−State Current, (180° Conduction Angles; TC = 93°C) IT(AV) 2.55 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 25 A Circuit Fusing Considerations, (t = 8.3 ms) I2t 2.6 A2s PGM 0.5 W PG(AV) 0.1 W Forward Peak Gate Current, (TC = 93°C, Pulse Width v 1.0 ms) IGM 0.2 A Peak Reverse Gate Voltage, (TC = 93°C, Pulse Width v 1.0 ms) VRGM 6.0 V Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C Forward Peak Gate Power, (TC = 93°C, Pulse Width v 1.0 ms) Forward Average Gate Power, (TC = 93°C, t = 8.3 ms) Value Unit V 400 600 3 2 1 TO−225AA CASE 77 STYLE 2 MARKING DIAGRAM YWW CR 106−xG Y = Year WW = Work Week CR106−x = Device Code x = 6 or 8 G = Pb−Free Package Mounting Torque (Note 2) − 6.0 in. lb. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of compression washer (B52200-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B). For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum results, an activated flux (oxide removing) is recommended. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 4 1 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate ORDERING INFORMATION Publication Order Number: MCR106/D MCR106−6, MCR106−8 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 200 mA mA − − 2.0 V − − − − 200 500 OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1000 Ohms) IDRM, IRRM TJ = 25°C TJ = 110°C ON CHARACTERISTICS Peak Forward On−State Voltage (Note 3) (ITM = 4 A Peak) VTM Gate Trigger Current (Continuous dc) (Note 4) (VAK = 7 Vdc, RL = 100 Ohms) (TC = −40°C) IGT Gate Trigger Voltage (Continuous dc) (Note 4) (VAK = 7 Vdc, RL = 100 Ohms) VGT − − 1.0 V Gate Non-Trigger Voltage (Note 4) (VAK = 12 Vdc, RL = 100 Ohms, TJ = 110°C) VGD 0.2 − − V IH − − 5.0 mA dv/dt − 10 − V/ms Holding Current (VAK = 7 Vdc, Initiating Current = 200 mA, Gate Open) mA DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off−State Voltage (TJ = 110°C) 3. Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 4. RGK current is not included in measurement. ORDERING INFORMATION Device Package Shipping MCR106−6 TO−225AA 500 Units / Box MCR106−6G TO−225AA (Pb−Free) 500 Units / Box MCR106−8 TO−225AA 500 Units / Box MCR106−8G TO−225AA (Pb−Free) 500 Units / Box http://onsemi.com 2 MCR106−6, MCR106−8 Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − 110 TA , MAXIMUM ALLOWABLE AMBIENTTEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE °( C) CURRENT DERATING 110 106 90 102 0 98 α π f = 60 Hz 0 70 94 90 α = 30° 86 82 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 IT(AV), AVERAGE FORWARD CURRENT (AMP) 3.6 π f = 60 Hz 50 dc 60° 90° 120° 180° α 4.0 30 α = 30° 0 Figure 1. Maximum Case Temperature 0.1 60° 90° 180° dc 0.2 0.3 0.4 0.5 0.6 0.7 IT(AV), AVERAGE FORWARD CURRENT (AMP) Figure 2. Maximum Ambient Temperature http://onsemi.com 3 0.8 MCR106−6, MCR106−8 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MCR106/D