Hanbit HMF8M8M4G-70 Flash-rom module 8mbyte (8m x 8-bit) Datasheet

HANBit
HMF8M8M4G
FLASH-ROM MODULE 8MByte (8M x 8-Bit)
Part No. HMF8M8M4G
GENERAL DESCRIPTION
The HMF8M8M4G is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x8bit
configuration. The module consists of four 2M x 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/CE1, /CE2, /CE3, /CE4) are used to enable the module’s 4 bytes independently. Output enable (/OE)
and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTLcompatible.
PIN ASSIGNMENT
FEATURES
w Part identification
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
1
Vss
25
A15
49
NC
2
/CE0
26
A16
50
NC
w Access time : 70, 90, 120ns
3
/CE1
27
A17
51
NC
w High-density 8MByte design
4
/CE2
28
A18
52
NC
w High-reliability, low-power design
5
/CE3
29
A19
53
NC
w Single + 5V ± 0.5V power supply
6
Vcc
30
Vcc
54
NC
7
/WE
31
A20
55
NC
8
/OE
32
DQ0
56
NC
NC
- HMF8M8M4
(Solder Plating Lead)
- HMF8M8M4G (Gold Plating Lead)
w Easy memory expansion
w All inputs and outputs are TTL-compatible
w FR4-PCB design
w Low profile 72-pin SIMM
w Minimum 1,000,000 write/erase cycle
w Flexible sector architecture
w Embedded algorithms
w Erase suspend / Erase resume
OPTIONS
MARKING
w Timing
70ns access
- 70
90ns access
- 90
120ns access
-120
w Packages
72-pin SIMM
M
9
/RESET
33
DQ1
57
10
A0
34
DQ2
58
NC
11
A1
35
DQ3
59
Vcc
12
A2
36
DQ4
60
NC
13
A3
37
DQ5
61
NC
14
A4
38
DQ6
62
NC
15
A5
39
Vss
63
Vss
16
A6
40
DQ7
64
NC
17
A7
41
/RY_BY0
65
NC
18
A8
42
/RY_BY1
66
NC
19
A9
43
/RY_BY2
67
NC
20
A10
44
Vcc
68
NC
21
A11
45
/RY_BY3
69
NC
22
A12
46
NC
70
NC
23
A13
47
NC
71
NC
24
A14
48
NC
72
Vss
72-PIN SIMM
TOP VIEW
URL: www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ7
A0 - A20
8
21
A0-20
/WE
DQ 0-7
/RY_BY0
U1
/OE
/CE
/CE0
A0-20
/WE
DQ 0-7
U2
/OE
/RY_BY2
/CE
/CE2
A0-20
/WE
DQ 0-7
U3
/OE
/RY_BY1
/CE
/CE1
A0-20
/WE
/WE
/OE
/OE
DQ 0-7
U4
/RY_BY3
/CE
/CE3
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
Note : X means don't care
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REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-2.0V to +7.0V
Voltage with respect to ground Vcc
VCC
-2.0V to +7.0V
Storage Temperature
TSTG
-65oC to +125oC
TA
-55oC to +125oC
Voltage with respect to ground all other pins
Operating Temperature
Power Dissipation
PD
4W
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
Vcc for ± 10% device Supply Voltages
Vcc
4.5V
Ground
VSS
0
PARAMETER
TYP.
MAX
5.5V
0
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
TEST CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
Vcc=Vcc max, VIN= GND to Vcc
IL1
±1.0
µA
Output Leakage Current
Vcc=Vcc max, VOUT= GND to Vcc
IL0
±1.0
µA
Output High Voltage
IOH = -2.5mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 12mA, Vcc =Vcc min
VOL
0.45
V
Vcc Active Current for Read(1)
/CE = VIL, /OE=VIH,
ICC1
40
mA
/CE = VIL, /OE=VIH
ICC2
60
mA
/CE= VIH
ICC3
1.0
mA
4.2
V
2.4
V
Vcc Active Current for Program
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
VLKO
3.2
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
COMMENTS
MAX.
Excludes 00H programming
Sector Erase Time
-
1
8
sec
prior to erasure
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REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
Byte Programming Time
-
7
300
Excludes system-level
µs
overhead
Excludes system-level
Chip Programming Time
-
14.4
43.2
sec
overhead
TSOP CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
TEST SETUP
MIN
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
DESCRIPTION
CIN
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
o
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
DESCRIPTION
JEDEC
STANDARD
tAVAV
tRC
tAVQV
tACC
TEST SETUP
Read Cycle Time
-75
-90
UNIT
Min
70
90
ns
Max
70
90
ns
Max
70
90
ns
/CE = VIL
Address to Output Delay
/OE = VIL
tELQV
tCE
Chip Enable to Output Delay
/OE = VIL
tGLQV
tOE
Chip Enable to Output Delay
Max
40
40
ns
tEHQZ
tDF
Chip Enable to Output High-Z
Max
20
20
ns
tGHQZ
tDF
Output Enable to Output High-Z
Max
20
20
ns
tAXQX
tQH
Min
0
0
ns
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
TEST SPECIFICATIONS
TEST CONDITION
ALL SPEED OPTIONS
Output load
UNIT
1TTL gate
Output load capacitance,
100
pF
20
ns
0.45-2.4
V
Input timing measurement reference levels
0.8
V
Output timing measurement reference levels
2.0
V
CL (Including jig capacitance)
Input rise and full times
Input pulse levels
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER
SYMBOLS
DESCRIPTION
-75
-90
UNIT
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
Min
70
90
ns
tAVWL
tAS
Address Setup Time
Min
0
0
ns
tWLAX
tAH
Address Hold Time
Min
40
45
ns
tDVWH
tDS
Data Setup Time
Min
40
45
ns
tWHDX
tDH
Data Hold Time
Min
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
ns
Read Recover Time Before Write
Min
0
0
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
40
45
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
1
1
sec
Vcc set up time
Min
50
50
µs
tVCS
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER SYMBOLS
DESCRIPTION
-75
-90
UNIT
Min
70
90
ns
Address Setup Time
Min
0
0
ns
tAH
Address Hold Time
Min
40
45
ns
tDVWH
tDS
Data Setup Time
Min
40
45
ns
tWHDX
tDH
Data Hold Time
Min
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
ns
Read Recover Time Before Write
Min
0
0
ns
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
tAVWL
tAS
tWLAX
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
40
45
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
7
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
1
1
sec
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
u READ OPERATIONS TIMING
u RESET TIMING
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
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REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF8M8M4G
PACKAGE DIMENSIONS
108mm
3.2 mm
6.35 mm
72
1
2.03 mm
1.02 mm
6.35 mm
1.27 mm
3.34 mm
95.25 mm
2.54 mm
0.25 mm MAX
MIN
1.29±0.08 mm
Gold: 1.04±0.10 mm
1.27
Solder: 0.914±0.10 mm
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF8M8M4G-70
8MByte
8M X 8bit
72 Pin-SIMM
HMF8M8M4G-90
8MByte
8M X 8bit
HMF8M8M4G-120
8MByte
8M X 8bit
URL: www.hbe.co.kr
REV.02(August,2002)
Component
Vcc
SPEED
4EA
5V
70ns
72 Pin-SIMM
4EA
5V
90ns
72 Pin-SIMM
4EA
5V
120ns
11
Number
HANBit Electronics Co., Ltd.
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