HANBit HMF8M8M4G FLASH-ROM MODULE 8MByte (8M x 8-Bit) Part No. HMF8M8M4G GENERAL DESCRIPTION The HMF8M8M4G is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x8bit configuration. The module consists of four 2M x 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE1, /CE2, /CE3, /CE4) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTLcompatible. PIN ASSIGNMENT FEATURES w Part identification PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 Vss 25 A15 49 NC 2 /CE0 26 A16 50 NC w Access time : 70, 90, 120ns 3 /CE1 27 A17 51 NC w High-density 8MByte design 4 /CE2 28 A18 52 NC w High-reliability, low-power design 5 /CE3 29 A19 53 NC w Single + 5V ± 0.5V power supply 6 Vcc 30 Vcc 54 NC 7 /WE 31 A20 55 NC 8 /OE 32 DQ0 56 NC NC - HMF8M8M4 (Solder Plating Lead) - HMF8M8M4G (Gold Plating Lead) w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS MARKING w Timing 70ns access - 70 90ns access - 90 120ns access -120 w Packages 72-pin SIMM M 9 /RESET 33 DQ1 57 10 A0 34 DQ2 58 NC 11 A1 35 DQ3 59 Vcc 12 A2 36 DQ4 60 NC 13 A3 37 DQ5 61 NC 14 A4 38 DQ6 62 NC 15 A5 39 Vss 63 Vss 16 A6 40 DQ7 64 NC 17 A7 41 /RY_BY0 65 NC 18 A8 42 /RY_BY1 66 NC 19 A9 43 /RY_BY2 67 NC 20 A10 44 Vcc 68 NC 21 A11 45 /RY_BY3 69 NC 22 A12 46 NC 70 NC 23 A13 47 NC 71 NC 24 A14 48 NC 72 Vss 72-PIN SIMM TOP VIEW URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ7 A0 - A20 8 21 A0-20 /WE DQ 0-7 /RY_BY0 U1 /OE /CE /CE0 A0-20 /WE DQ 0-7 U2 /OE /RY_BY2 /CE /CE2 A0-20 /WE DQ 0-7 U3 /OE /RY_BY1 /CE /CE1 A0-20 /WE /WE /OE /OE DQ 0-7 U4 /RY_BY3 /CE /CE3 TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE X L L Din ACTIVE Note : X means don't care URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +125oC TA -55oC to +125oC Voltage with respect to ground all other pins Operating Temperature Power Dissipation PD 4W w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ± 10% device Supply Voltages Vcc 4.5V Ground VSS 0 PARAMETER TYP. MAX 5.5V 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) TEST CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, VIN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 40 mA /CE = VIL, /OE=VIH ICC2 60 mA /CE= VIH ICC3 1.0 mA 4.2 V 2.4 V Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage VLKO 3.2 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G Byte Programming Time - 7 300 Excludes system-level µs overhead Excludes system-level Chip Programming Time - 14.4 43.2 sec overhead TSOP CAPACITANCE PARAMETER PARAMETER SYMBOL TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF DESCRIPTION CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tRC tAVQV tACC TEST SETUP Read Cycle Time -75 -90 UNIT Min 70 90 ns Max 70 90 ns Max 70 90 ns /CE = VIL Address to Output Delay /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 40 40 ns tEHQZ tDF Chip Enable to Output High-Z Max 20 20 ns tGHQZ tDF Output Enable to Output High-Z Max 20 20 ns tAXQX tQH Min 0 0 ns Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First TEST SPECIFICATIONS TEST CONDITION ALL SPEED OPTIONS Output load UNIT 1TTL gate Output load capacitance, 100 pF 20 ns 0.45-2.4 V Input timing measurement reference levels 0.8 V Output timing measurement reference levels 2.0 V CL (Including jig capacitance) Input rise and full times Input pulse levels URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS DESCRIPTION -75 -90 UNIT JEDEC STANDARD tAVAV tWC Write Cycle Time Min 70 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Vcc set up time Min 50 50 µs tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION -75 -90 UNIT Min 70 90 ns Address Setup Time Min 0 0 ns tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns JEDEC STANDARD tAVAV tWC Write Cycle Time tAVWL tAS tWLAX tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF8M8M4G PACKAGE DIMENSIONS 108mm 3.2 mm 6.35 mm 72 1 2.03 mm 1.02 mm 6.35 mm 1.27 mm 3.34 mm 95.25 mm 2.54 mm 0.25 mm MAX MIN 1.29±0.08 mm Gold: 1.04±0.10 mm 1.27 Solder: 0.914±0.10 mm (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF8M8M4G-70 8MByte 8M X 8bit 72 Pin-SIMM HMF8M8M4G-90 8MByte 8M X 8bit HMF8M8M4G-120 8MByte 8M X 8bit URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 5V 70ns 72 Pin-SIMM 4EA 5V 90ns 72 Pin-SIMM 4EA 5V 120ns 11 Number HANBit Electronics Co., Ltd.