BZT52C2V4 - BZT52C39 SURFACE MOUNT ZENER DIODE Features · · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 · · · · · · · · Maximum Ratings Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D — 1.35 E 0.55 Typical J G Case: SOD-123, Plastic UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: See Below Weight: 0.01 grams (approx.) Ordering Information: See Page 4 a A B G E C 0.25 — H 0.11 Typical J — 0.10 a 0° 8° All Dimensions in mm @ TA = 25°C unless otherwise specified Characteristic Symbol Forward Voltage (Note 2) @ IF = 10mA Unit 0.9 V Pd 500 mW RqJA 305 °C/W Tj, TSTG -65 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Value VF Power Dissipation (Note 1) Notes: D H Mechanical Data Dim 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2. 2. Short duration test pulse used to minimize self-heating effect. XX YM Marking Information XX = Product Type Marking Code (See Page 2) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 Code J K L M N P R S Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS18004 Rev. 19 - 2 1 of 3 BZT52C2V4 - BZT52C39 Electrical Characteristics Type Number @ TA = 25°C unless otherwise specified Zener Voltage Range (Note 2) Marking Code Vz @IZT Maximum Reverse Current (Note 2) Maximum Zener Impedance (Note 3) IZT Nom (V) Min (V) Max (V) mA ZZT @ IZT ZZK @ IZK W IZK IR mA uA @ VR Typical Temperature Coefficient @ IZTC mV/°C Test Current IZTC V Min Max mA BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5 BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5 BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5 BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5 BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5 BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5 BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5 BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5 BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5 BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5 BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2. 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. Ordering Information (Note 4) Device Packaging Shipping (Type Number)-7* SOD-123 3000/Tape & Reel * Add “-7” to the appropriate type number in Table 1 above example: 6.2V Zener = BZT52C6V2-7. Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS18004 Rev. 19 - 2 2 of 3 BZT52C2V4 - BZT52C39 0.6 50 IZ, ZENER CURRENT (mA) PD, POWER DISSIPATION (W) C2V7 C3V9 C3V3 0.5 0.4 0.3 0.2 0.1 0 Tj = 25°C 40 C5V6 C4V7 C6V8 C6V2 C8V2 30 20 10 Test Current IZ 5.0mA 0 0 25 75 50 100 125 150 0 1 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs Ambient Temperature 30 Tj = 25°C 10 C10 2 10 C39 Tj = 25°C IZ, ZENER CURRENT (mA) IZ, ZENER CURRENT (mA) C12 C15 20 C18 C22 10 0 Test current IZ 2mA C27 Test current IZ 5mA 0 C33 C36 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 8 6 4 Test Current IZ 2mA 2 0 40 10 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 1000 Tj = 25 °C f = 1MHz CT, TOTAL CAPACITANCE (pF) VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 5 Total Capacitance vs Nominal Zener Voltage DS18004 Rev. 19 - 2 3 of 3 BZT52C2V4 - BZT52C39