UTC MMDT2227 Npn & pnp general purpose amplifier Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMDT2227
DUAL TRANSISTOR
NPN & PNP GENERAL
PURPOSE AMPLIFIER

DESCRIPTION
The UTC MMDT2227 is an NPN & PNP general purpose amplifier.
it’s suitable for a medium power amplifier and switch requiring
collector currents up to 600mA.

FEATURES
* Low VCE(SAT), VCE(SAT) = 0.3V (typ.)@IC / IB = 150mA / 15mA
VCE(SAT) < -0.4V (typ.) @IC/IB = -150mA / -15mA
* NPN MMBT2222A
PNP MMBT2907A
* High collector current gain under high collector current condition

EQUIVALENT CIRCUIT

ORDERING INFORMATION
Ordering Number
Package
MMDT2227G-AL6-R
SOT-363
MMDT2227G-AL6-R

1
E1
Pin Assignment
2
3
4
5
B1 C2 E2 B2
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AL6: SOT-363
(3)Green Package
(3) G: Halogen Free and Lead Free
6
C1
Packing
Tape Reel
MARKING
6
5
4
D27G
1
2
3
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MMDT2227

DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS* (TA=25°C , unless otherwise specified)(Note 2)
PARAMETER
SYMBOL
RATINGS
UNIT
40
Collector-Emitter Voltage
VCEO
V
-60
75
Collector-Base Voltage
VCBO
V
-60
6
Emitter-Base Voltage
VEBO
V
-5.0
600
Collector Current - Continuous
IC
mA
-600
Derate above 25°C
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
TR1
TR2
TR1
TR2
TR1
TR2
TR1
TR2

THERMAL DATA
PARAMETER
Junction to Case

SYMBOL
θJC
RATINGS
415
UNIT
°С/W
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
TR1
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
fT
COB
CIB
TEST CONDITIONS
MIN TYP MAX UNIT
IC=10mA, IB=0 (Note)
IC=10 µA, IE=0
IE=10µA, IC=0
VCB= 60V, IE=0
VEB=3.0V, IC=0
40
75
6
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=150mA, VCE= 1V (Note)
IC=500mA, VCE=10V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
35
50
75
100
50
40
10
10
0.6
IC= 20mA, VCE=20V, f =100MHz 300
VCB=10 V, IE=0, f=100 kHz
VEB=0.5V, IC=0, f=100 kHz
IC=100µA, VCE=10V,
Noise Figure
NF
RS=1.0kΩ, f =1.0kHz
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
V
V
nA
nA
300
0.3
1.0
1.2
2.0
V
V
V
V
8
25
MHz
pF
pF
4
dB
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
DUAL TRANSISTOR
ELECTRICAL CHARACTERISTICS(Cont.)
TR2
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
fT
COB
CIB
TEST CONDITIONS
MIN TYP MAX UNIT
IC=-10mA, IB=0 (Note)
IC=-10 µA, IE=0
IE=-10µA, IC=0
VCB= -50V, IE=0
VEB=-3.0V, IC=0
-60
-60
-5.0
IC=-0.1mA, VCE=-10V
IC=-1.0mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE= -10V (Note)
IC=-500mA, VCE=-10V (Note)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
75
100
100
100
50
-20
-30
IC= -50mA,VCE=-20V,f =100MHz 200
VCB=-10V, IE=0, f=100 kHz
VEB=-2.0V, IC=0, f=100 kHz
IC=-100µA, VCE=-10V,
Noise Figure
NF
RS=-1.0kΩ, f =1.0kHz
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
V
V
nA
nA
300
2.0
-0.4
-1.6
-1.3
-2.6
V
V
V
V
8
30
MHz
pF
pF
dB
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DUAL TRANSISTOR
TYPICAL CHARACTERISTICS

Emitter Current, IE (µA)
Collector Current, IC (A)
Collector Current, IC (µA)
Collector Current, IC (mA)
MMDT2227 TR1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
DUAL TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
MMDT2227 TR2
Collector Current vs.
Collector-Base Voltage
12
Collector Current vs.
Collector-Emitter Voltage
14
12
10
10
8
8
6
6
4
4
2
0
2
Emitter Current vs.
Emitter-Base Voltage
14
10
8
6
4
Collector Current vs.
Collector-Emitter Voltage
0.5
0.4
IB=1.49mA
0.3
0.2
IB=0.70mA
0.1
2
0
0 20 40 60 80 100 120 140 160
Collector-Emitter Voltage, -VCEO (V)
0.6
Collector Current, -IC (A)
12
Emitter Current, -IE (µA)
0
0 20 40 60 80 100 120 140160 180
Collector-Base Voltage, -VCBO (V)
IB=0.05mA
0
6
2
4
8
10 12 14
Emitter-Base Voltage, -VEBO (V)
0
0
IB=0.004mA
2 4
6
8 10 12 14 16
Collector-Emitter Voltage, -VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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