PHILIPS BYD11J Controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BYD11 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1996
1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
FEATURES
• Glass passivated
• High maximum operating
temperature
a
k
• Low leakage current
MAM196
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
Fig.1 Simplified outline (SOD91) and symbol.
DESCRIPTION
MARKING
Cavity free cylindrical glass package
through Implotec(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
TYPE NUMBER
MARKING CODE
BYD11D
11D
BYD11G
11G
BYD11J
11J
BYD11K
11K
BYD11M
11M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VRWM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
repetitive peak reverse voltage
BYD11D
−
200
V
BYD11G
−
400
V
BYD11J
−
600
V
BYD11K
−
800
V
BYD11M
−
1000
V
BYD11D
−
200
V
BYD11G
−
400
V
BYD11J
−
600
V
BYD11K
−
800
V
BYD11M
−
1000
V
BYD11D
−
200
V
BYD11G
−
400
V
BYD11J
−
600
V
BYD11K
−
800
V
BYD11M
−
1000
V
crest working reverse voltage
continuous reverse voltage
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
SYMBOL
IF(AV)
BYD11 series
PARAMETER
average forward current
CONDITIONS
MIN.
MAX.
UNIT
Ttp = 55 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
−
0.50 A
Tamb = 60 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
−
0.37 A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
10
A
PRSM
non-repetitive peak reverse power
dissipation
t = 20 µs half sinewave;
Tj = Tj max prior to surge
−
200
W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
see Fig.5
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VFtzt
V(BR)R
IR
PARAMETER
CONDITIONS
MIN.
TYP.
IF = 0.5 A; Tj = Tj max; see Fig.6
−
−
0.91
V
IF = 0.5 A; see Fig.6
−
−
1.06
V
BYD11D
225
−
−
V
BYD11G
450
−
−
V
BYD11J
650
−
−
V
BYD11K
900
−
−
V
BYD11M
1100
−
−
V
VR = VRRMmax; see Fig.7
−
−
1
µA
VR = VRRMmax; Tj = 165 °C; see Fig.7
−
−
75
µA
forward voltage
reverse avalanche
breakdown voltage
MAX.
UNIT
IR = 0.1 mA
reverse current
trr
reverse recovery time when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
−
3
−
µs
Cd
diode capacitance
−
14
−
pF
VR = 0 V; f = 1 MHz; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
180
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
GRAPHICAL DATA
MBG042
MBG051
0.8
0.8
handbook, halfpage
handbook, halfpage
IF(AV)
IF(AV)
(A)
(A)
0.6
0.6
0.4
0.4
0.2
0.2
0
0
40
80
120
a = 1.57; VR = VRRMmax; δ = 0.5.
Lead length 10 mm.
Fig.2
0
160
200
Ttp (oC)
0
40
80
120
a = 1.57; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.9.
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3
160
200
Tamb (oC)
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MBG634
MCD583
0.8
200
handbook, halfpage
handbook, halfpage
a = 3 2.5
P
(W)
2
1.57
1.42
0.6
Tj
o
( C)
0.4
100
D
G
J
K
M
0.2
0
0
0.2
0.4
IF (AV) (A)
0
0.6
0
500
VR (V)
1000
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.4
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
1996 Sep 26
Fig.5
4
Maximum permissible junction temperature
as a function of reverse voltage.
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
MCD582
3
10
handbook, halfpage
MBG047
4
handbook, halfpage
IF
(A)
IR
(µA)
3
10 2
2
10
1
1
0
1
0
0
2
VF (V)
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
VR = VRRMmax.
Fig.6
Fig.7
Forward current as a function of forward
voltage; maximum values.
100
Tj ( oC)
200
Reverse current as a function of junction
temperature; maximum values.
MBG025
10 1
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)
7
50
1
2
3
10 −1
1
10
102
VR (V)
10
3
MGA200
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 26
Fig.9 Device mounted on a printed-circuit board.
5
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
handbook, full pagewidth
BYD11 series
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 Sep 26
6
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
PACKAGE OUTLINE
3.5 max
handbook, full pagewidth
0.55
max
1.7
max
29 min
3.0 max
MBC053
29 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.11 SOD91.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26
7
Not recommended for new designs
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