DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series FEATURES • Glass passivated • High maximum operating temperature a k • Low leakage current MAM196 • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. Fig.1 Simplified outline (SOD91) and symbol. DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. TYPE NUMBER MARKING CODE BYD11D 11D BYD11G 11G BYD11J 11J BYD11K 11K BYD11M 11M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BYD11D − 200 V BYD11G − 400 V BYD11J − 600 V BYD11K − 800 V BYD11M − 1000 V BYD11D − 200 V BYD11G − 400 V BYD11J − 600 V BYD11K − 800 V BYD11M − 1000 V BYD11D − 200 V BYD11G − 400 V BYD11J − 600 V BYD11K − 800 V BYD11M − 1000 V crest working reverse voltage continuous reverse voltage 1996 Sep 26 2 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers SYMBOL IF(AV) BYD11 series PARAMETER average forward current CONDITIONS MIN. MAX. UNIT Ttp = 55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 0.50 A Tamb = 60 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.37 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax − 10 A PRSM non-repetitive peak reverse power dissipation t = 20 µs half sinewave; Tj = Tj max prior to surge − 200 W Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C see Fig.5 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VFtzt V(BR)R IR PARAMETER CONDITIONS MIN. TYP. IF = 0.5 A; Tj = Tj max; see Fig.6 − − 0.91 V IF = 0.5 A; see Fig.6 − − 1.06 V BYD11D 225 − − V BYD11G 450 − − V BYD11J 650 − − V BYD11K 900 − − V BYD11M 1100 − − V VR = VRRMmax; see Fig.7 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.7 − − 75 µA forward voltage reverse avalanche breakdown voltage MAX. UNIT IR = 0.1 mA reverse current trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − 3 − µs Cd diode capacitance − 14 − pF VR = 0 V; f = 1 MHz; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 250 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 26 3 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series GRAPHICAL DATA MBG042 MBG051 0.8 0.8 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 0.6 0.6 0.4 0.4 0.2 0.2 0 0 40 80 120 a = 1.57; VR = VRRMmax; δ = 0.5. Lead length 10 mm. Fig.2 0 160 200 Ttp (oC) 0 40 80 120 a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 160 200 Tamb (oC) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBG634 MCD583 0.8 200 handbook, halfpage handbook, halfpage a = 3 2.5 P (W) 2 1.57 1.42 0.6 Tj o ( C) 0.4 100 D G J K M 0.2 0 0 0.2 0.4 IF (AV) (A) 0 0.6 0 500 VR (V) 1000 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Solid line = VR. Dotted line = VRRM; δ = 0.5. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Sep 26 Fig.5 4 Maximum permissible junction temperature as a function of reverse voltage. Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series MCD582 3 10 handbook, halfpage MBG047 4 handbook, halfpage IF (A) IR (µA) 3 10 2 2 10 1 1 0 1 0 0 2 VF (V) Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. VR = VRRMmax. Fig.6 Fig.7 Forward current as a function of forward voltage; maximum values. 100 Tj ( oC) 200 Reverse current as a function of junction temperature; maximum values. MBG025 10 1 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 1 2 3 10 −1 1 10 102 VR (V) 10 3 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 26 Fig.9 Device mounted on a printed-circuit board. 5 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers handbook, full pagewidth BYD11 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) MAM057 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 Sep 26 6 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series PACKAGE OUTLINE 3.5 max handbook, full pagewidth 0.55 max 1.7 max 29 min 3.0 max MBC053 29 min Dimensions in mm. The marking band indicates the cathode. Fig.11 SOD91. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 26 7 Not recommended for new designs