CYStech Electronics Corp. Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 1/4 Low VCE(SAT) PNP Epitaxial Planar Transistor BTA1300A3 Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. Features • High DC current gain and excellent hFE linearity. HFE(1)=140—600(VCE=-1V,IC=-0.5A) HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A) • Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA). Symbol BTA1300A3 TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Junction Temperature Storage Temperature Symbol Limits Unit VCBO VCES VCEO VEBO IC ICP Pd Tj Tstg -20 -20 -10 -6 -2 -5 750 150 -55~+150 V V V V A mW °C °C Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%. BTA1300A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. -20 -10 -6 140 60 - Typ. 120 140 50 Max. -0.1 -0.1 -0.5 -1.5 600 - Unit V V V uA uA V V MHz pF Test Conditions IC=-50uA IC=-10mA IE=-1mA VCB=-20V VEB=-6V IC=-2A, IB=-50mA VCE=-1V, IC=-2A VCE=-1V, IC=-500mA VCE=-1V, IC=-4A VCE=-1V, IE=500mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range BTA1300A3 Y 140~280 GR 200~400 BL 300~600 CYStek Product Specification Spec. No. : C816A3 Issued Date : 2003.04.15 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=40IB Current Gain---HFE Saturation Voltage---(mV) VCE=1V 100 100 10 1 1 10 100 1000 1 10000 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) ON Voltage vs Collector Current Power Derating Curve 1000 Power Dissipation---PD(mW) ON Voltage---(mV) 800 VBE(ON)@VCE=1V 100 700 600 500 400 300 200 100 0 0.1 1 10 100 1000 Collector Current IC---(mA) BTA1300A3 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-92 Dimension α2 A Marking: B 1 2 A1300 3 α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1300A3 CYStek Product Specification