AP70T03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching
30V
RDS(ON)
9mΩ
ID
G
▼ RoHS Compliant
BVDSS
60A
S
Description
AP70T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP70T03GJ) are available for low-profile
applications.
GD
G
D
S
TO-252(H)
TO-251(J)
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
60
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
43
A
195
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
53
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201408266
AP70T03GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=33A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
18
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=33A
-
35
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V
-
-
250
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=33A
-
17
27
nC
Qgs
Gate-Source Charge
VDS=20V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=33A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
1485 2400
pF
Coss
Output Capacitance
VDS=25V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Min.
Typ.
o
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=33A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP70T03GH/J-HF
120
200
ID , Drain Current (A)
T C =25 C
ID , Drain Current (A)
T C =175 o C
10V
8.0V
o
150
6.0V
100
10V
8.0V
6.0V
90
60
V G =4.0V
30
50
V G =4.0V
0
0
0.0
1.5
3.0
0.0
4.5
V DS , Drain-to-Source Voltage (V)
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2
I D =20A
T C =25 ℃
RDS(ON) (mΩ)
40
.
20
Normalized RDS(ON)
I D =33A
V G =10V
1.6
1.2
0.8
0
0.4
2
4
6
8
10
-50
2.5
100
2
VGS(th) (V)
IS(A)
175
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1000
T j =175 o C
100
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
10
25
o
V GS , Gate-to-Source Voltage (V)
T j =25 o C
1
1.5
1
0.1
0.5
0
0.5
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
175
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP70T03GH/J-HF
12
f=1.0MHz
10000
9
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =33A
6
C iss
1000
3
C oss
C rss
100
0
0
5
10
15
20
25
1
30
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10us
ID (A)
100
.
100us
10
1ms
10ms
100ms
1s
DC
o
T C =25 C
Single Pulse
1
0.1
1
10
Normalized Thermal Response (Rthjc)
1000
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP70T03GH/J-HF
MARKING INFORMATION
TO-251
70T03GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
70T03GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5