MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • (No Suffix) Electrically Similar to Popular MJE340 and MJE350 300 V (Min) − VCEO(sus) 0.5 A Rated Collector Current Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb−Free Packages SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS 4 1 2 3 DPAK CASE 369C STYLE 1 MAXIMUM RATINGS Rating Symbol Max Unit VCEO 300 Vdc Collector−Base Voltage VCB 300 Vdc Emitter−Base Voltage VEB 3 Vdc IC 0.5 0.75 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 15 0.12 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.56 0.012 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Collector−Emitter Voltage Collector Current − Continuous − Peak AYWW J3x0G A Y WW J3x0 G = = = = Assembly Location Year Work Week Device Code x= 4 or 5 = Pb−Free Package ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.33 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 80 °C/W Leading Temperature for Soldering Purpose TL 260 °C See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 8 1 Publication Order Number: MJD340/D MJD340 (NPN) MJD350 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 300 − V Collector Cutoff Current (VCB = 300 V, IE = 0) ICEO − 0.1 mA Emitter Cutoff Current (VBE = 3 V, IC = 0) IEBO − 0.1 mA hFE 30 240 − Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 10 mA) VCE(sat) − 1 V Base−Emitter On Voltage (IC = 1 A, VCE = 10 V) VBE(on) − 1.5 V fT 10 − MHz OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 1 mA, IB = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 50 mA, VCE = 10 V) DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (IC = 50 mA, VCE = 10 V, f = 10 MHz) 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. TYPICAL CHARACTERISTICS MJD340 300 VCE = 2 V VCE = 10 V hFE , DC CURRENT GAIN 200 TJ = 150°C 100 70 +100°C 50 +25°C 30 20 10 -55°C 1 2 3 5 7 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Figure 1. DC Current Gain http://onsemi.com 2 70 100 200 300 500 MJD340 (NPN) MJD350 (PNP) MJD340 1 V, VOLTAGE (VOLTS) TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 2. “On” Voltages MJD350 1 200 1 TJ = 150°C TJ = 25°C 0.8 V, VOLTAGE (VOLTS) 25°C 100 hFE , DC CURRENT GAIN MJD350 70 -55°C 50 30 20 VCE = 2 V VCC = 10 V 7 10 0.6 VBE @ VCE = 10 V 0.4 IC/IB = 10 0.2 VCE(sat) 10 5 VBE(sat) @ IC/IB = 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 0 500 5 7 10 Figure 3. DC Current Gain r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.03 0.02 0.01 0.01 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 Figure 4. “On” Voltages D = 0.5 0.2 0.1 0.07 0.05 IC/IB = 5 RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 5. Thermal Response http://onsemi.com 3 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k MJD340 (NPN) MJD350 (PNP) 1000 IC, COLLECTOR CURRENT (mA) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 500 300 200 500 ms 1 ms 100 50 30 20 dc 10 5 3 2 1 10 20 30 50 70 100 200 300 500 700 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Active Region Safe Operating Area PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 1.5 15 TA TC 1 10 0.5 5 0 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 7. Power Derating ORDERING INFORMATION Package Shipping† MJD340G DPAK (Pb−Free) 75 Units / Rail MJD340RLG DPAK (Pb−Free) 1800 / Tape & Reel MJD340T4G DPAK (Pb−Free) 2500 / Tape & Reel MJD350G DPAK (Pb−Free) 75 Units / Rail MJD350T4G DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MJD340 (NPN) MJD350 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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