AP9962AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Single Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free BVDSS 40V RDS(ON) 20mΩ ID G 32A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. GD The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9962AGJ) are available for low-profile applications. S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 32 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 20 A 1 IDM Pulsed Drain Current 120 A PD@TC=25℃ Total Power Dissipation 27.8 W Linear Derating Factor 0.22 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Maixmum Thermal Resistance, Junction-case 4.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 200906104 AP9962AGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 40 - - V VGS=10V, ID=20A - - 20 mΩ VGS=4.5V, ID=16A - - 30 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=20A - 40 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=32V ,VGS=0V - - 250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=20A - 12 20 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=32V - 2.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 7.8 - nC VDS=20V - 7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=20A - 46 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 20 - ns tf Fall Time RD=1.0Ω - 6 - ns Ciss Input Capacitance VGS=0V - 820 1800 pF Coss Output Capacitance VDS=25V - 95 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Min. Typ. IS=20A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9962AGH/J-HF 100 80 10V 7.0V T C =25 o C 10V 7.0V o T C =150 C ID , Drain Current (A) ID , Drain Current (A) 80 5.0V 60 4.5V 40 5.0V 60 4.5V 40 20 V G =3.0V 20 V G =3.0V 0 0 0 1 2 3 4 0 5 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 4 5 6 Fig 2. Typical Output Characteristics 28 1.8 I D =16A T C =25 o C I D =20A V G =10V 1.6 Normalized RDS(ON) 24 RDS(ON) (mΩ) 2 V DS , Drain-to-Source Voltage (V) 20 1.4 1.2 1.0 16 0.8 0.6 12 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 16 1.6 Normalized VGS(th) (V) 1.4 IS(A) 12 8 T j =150 o C o T j =25 C 1.2 1 0.8 4 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9962AGH/J-HF 14 f=1.0MHz 10000 I D =20A V DS =20V V DS =24V V DS =32V 10 1000 Ciss C (pF) VGS , Gate to Source Voltage (V) 12 8 6 Coss Crss 100 4 2 10 0 0 5 10 15 20 25 1 30 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 100 100us 10 1ms 10ms 100ms DC 1 T C =25 o C Single Pulse 0.1 Normalized Thermal Response (Rthjc) 1000 ID (A) 13 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4