AG303-86 InGaP HBT Gain Block Product Information Product Features Product Description Functional Diagram The AG303-86 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG303-86 typically provides 20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 °C & is housed in a SOT-86 (micro-X) industry-standard SMT lead-free/green/RoHScompliant package. GND • DC – 6000 MHz • +14 dBm P1dB at 900 MHz • +26 dBm OIP3 at 900 MHz • 20.5 dB Gain at 900 MHz • Single Voltage Supply • Green SOT-86 SMT Package • Internally matched to 50 Ω Applications • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless RF In 3 RF Out 1 2 GND The AG303-86 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. Function Input Output/Bias Ground Pin No. 1 3 2, 4 The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG303-86 will work for other various applications within the DC to 6 GHz frequency range such as CATV and fixed wireless. Specifications (1) Parameter 4 Typical Performance (1) Units Min MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA DC Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output IP3 (2) Output IP2 Output P1dB Noise Figure Test Frequency Gain Output IP3 (2) Output P1dB Device Voltage Device Current 17.1 Typ 900 20.4 -22 -20 +14.0 +26.1 +34 3.0 1900 18.1 +24.8 +12.7 4.23 35 Max Parameter 6000 Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Units MHz dB dB dB dBm dBm dB Typical 500 21.1 -21 -22 +14.0 +26.4 2.9 900 20.4 -22 -20 +14.0 +26.1 3.0 1900 18.1 -26 -16 +12.7 +24.8 3.2 2140 17.5 -25 -16 +12.4 +24.4 3.2 19.1 1. Test conditions: T = 25º C, Supply Voltage = +5 V, Rbias = 22.1 Ω, 50 Ω System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage. Absolute Maximum Rating Parameter Rating Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature -40 to +85 °C -55 to +125 °C +5 V +10 dBm +250° C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. AG303-86* AG303-86G AG303-86PCB * Description InGaP HBT Gain Block (lead-tin SOT-86 Pkg) InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-86 Pkg) 700 – 2400 MHz Fully Assembled Eval. Board This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 1 of 6 June 2005 AG303-86 InGaP HBT Gain Block Product Information Typical Device RF Performance Supply Bias = +5 V, Rbias = 22.1 Ω, Icc = 35 mA Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 21.4 -25 -19 +14.2 +26.5 2.9 500 21.1 -21 -22 +14.0 +26.4 2.9 900 20.4 -22 -20 +14.0 +26.1 3.0 1900 18.1 -26 -16 +12.7 +24.8 3.2 2140 17.5 -25 -16 +12.4 +24.4 3.2 2400 16.9 -25 -15 +12.1 +23.9 3.2 3500 14.9 -25 -15 +9.3 5800 11.4 -25 -14 1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 Ω, Icc = 35 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss 20 18 16 14 -40 C +25 C 1 -10 -20 -30 S11 +85 C 2 Frequency (GHz) 3 0 4 1 3 4 5 35 20 15 0 3.0 2 2.5 25 -40c +25c 0 1 +85c 200 10 5 1 1.5 2 2.5 Frequency (GHz) 600 800 0 1000 0.5 3 3.5 20 18 16 16 Gain 18 12 16 8 4 0 -16 -12 -8 -4 Input Power (dBm) 1.5 2 2.5 3 frequency = 2000 MHz 16 12 Gain 14 8 12 4 10 0 Output Power 12 -20 1 +85 C Output Power / Gain vs. Input Power frequency = 900 MHz Output Power 4 +25 C Frequency (GHz) 14 +85 C 0 0.5 400 Gain (dB) 20 Gain (dB) 15 0 -40 C Output Power / Gain vs. Input Power 22 +25 C 2 Frequency (MHz) P1dB vs. Frequency -40 C 3 0 Frequency (GHz) 20 4.5 4 30 3 4.0 Noise Figure vs. Frequency Output Power (dBm) 1.5 3.5 Device Voltage (V) 20 1 10 5 +85 C 10 0.5 20 6 NF (dB) 25 0 30 Output IP2 vs. Frequency 40 OIP2 (dBm) OIP3 (dBm) Output IP3 vs. Frequency +25 C 2 Optimal operating point 40 Frequency (GHz) 30 -40 C S22 50 -40 12 0 60 Device Current (mA) S11, S22 (dB) Gain (dB) 22 P1dB (dBm) I-V Curve 0 Output Power (dBm) 24 0 4 8 -4 -20 -16 -12 -8 -4 Input Power (dBm) 0 4 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 2 of 6 June 2005 AG303-86 InGaP HBT Gain Block Product Information Typical Device RF Performance (cont’d) Supply Bias = +6 V, Rbias = 51 Ω, Icc = 35 mA Gain vs. Frequency Output IP3 vs. Frequency OIP3 (dBm) Gain (dB) 22 20 18 16 14 -40 C 12 0 +25 C 1 2 Frequency (GHz) 40 25 35 20 15 -40 C +85 C Output IP2 vs. Frequency 30 OIP2 (dBm) 24 +25 C 0.5 1 1.5 2 2.5 3 0 200 Frequency (GHz) +25c +85c 400 600 800 1000 Frequency (MHz) Noise Figure vs. Frequency P1dB vs. Frequency 5 20 4 15 NF (dB) P1dB (dBm) -40c 20 0 4 25 +85 C 10 3 30 10 5 -40 C +25 C 3 2 1 +85 C -40 C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0.5 +25 C 1 Frequency (GHz) +85 C 1.5 2 2.5 3 Frequency (GHz) Typical Device RF Performance Supply Bias = +8 V, Rbias = 108 Ω, Icc = 35 mA Output IP3 vs. Frequency Gain vs. Frequency OIP3 (dBm) Gain (dB) 22 20 18 16 40 25 35 20 15 14 -40 C 12 0 +25 C 1 -40 C +85 C 2 Frequency (GHz) +25 C 0 4 25 -40c +85 C 10 3 30 +25c +85c 20 0.5 1 1.5 2 2.5 0 3 200 400 600 800 1000 Frequency (MHz) Frequency (GHz) Noise Figure vs. Frequency P1dB vs. Frequency 5 20 4 15 NF (dB) P1dB (dBm) Output IP2 vs. Frequency 30 OIP2 (dBm) 24 10 5 -40 C +25 C 3 2 1 +85 C -40 C 0 0 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5 4 0 0.5 +25 C 1 1.5 +85 C 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 3 of 6 June 2005 AG303-86 InGaP HBT Gain Block Product Information Application Circuit Vcc Icc = 35 mA R1 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke RF IN RF OUT AG303-86 C2 Blocking Capacitor C1 Blocking Capacitor Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 µF 1000 pF Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF 2500 18 nH 56 pF 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. L1 C1, C2 C3 C4 R1 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 µF chip capacitor Do Not Place 22.1 Ω 1% tolerance Size 0603 0603 0603 Recommended Bias Resistor Values S upply R1 value S ize Voltage 5V 22.1 ohms 0603 6V 51 ohms 0805 7V 80 ohms 1206 8V 108 ohms 1210 9V 137 ohms 1210 10 V 166 ohms 1210 12 V 223 ohms 2010 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. 0603 Typical Device Data S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25° C, calibrated to device leads) Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) -25.41 -178.61 21.90 177.08 -24.39 2.68 -19.43 -24.87 155.73 21.78 166.27 -24.78 2.50 -19.45 -21.45 140.47 21.52 152.92 -24.79 0.95 -22.15 -21.60 121.87 21.11 140.36 -24.66 -0.65 -20.82 -22.37 104.08 20.62 128.55 -24.69 -0.47 -19.91 -22.85 90.28 20.09 117.05 -24.39 0.10 -18.42 -23.73 71.50 19.48 106.85 -23.69 0.62 -17.78 -25.75 49.04 18.90 96.96 -23.87 -1.60 -16.51 -25.80 20.48 18.25 87.61 -23.36 -1.98 -16.04 -20.60 4.51 17.68 79.42 -23.35 -1.35 -14.44 -21.35 -10.34 17.27 73.31 -23.42 -5.50 -14.66 -21.07 -27.85 16.73 64.91 -22.38 -6.48 -14.71 -20.28 -38.57 16.22 57.01 -22.30 -5.72 -15.40 -20.61 -43.39 15.75 49.56 -22.06 -7.56 -16.08 -21.43 -46.83 15.30 42.14 -21.79 -9.98 -16.63 -23.21 -45.68 14.83 34.70 -21.14 -14.32 -16.45 -25.23 -33.68 14.43 27.45 -21.01 -19.42 -15.95 -27.97 -14.82 14.02 20.33 -20.54 -19.39 -14.63 -28.62 21.21 13.56 13.29 -19.99 -23.59 -13.70 -28.24 50.04 13.16 5.94 -19.74 -27.50 -12.98 -27.40 61.17 12.84 -0.90 -19.45 -32.13 -12.53 -32.61 78.84 12.46 -7.21 -19.53 -34.94 -12.98 -38.22 144.81 12.12 -13.47 -19.19 -37.72 -13.34 -28.58 -149.36 11.86 -19.80 -18.83 -41.09 -14.62 -24.71 -137.35 11.61 -26.11 -18.61 -44.88 -15.38 Device S-parameters are available for download off of the website at: http://www.wj.com S22 (ang) -6.66 -23.90 -58.28 -83.69 -103.53 -120.77 -130.98 -140.18 -146.19 -135.98 -143.15 -151.02 -161.21 -172.88 172.37 152.74 135.04 121.85 110.85 104.47 101.02 97.98 99.21 100.79 100.73 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 4 of 6 June 2005 AG303-86 InGaP HBT Gain Block Product Information AG303-86 (SOT-86 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an “E” designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1C Passes at 1000 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Level 4 Passes at 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 1 Standard: JEDEC Standard J-STD-020A Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85 °C 335 °C/W 135 °C 1. The thermal resistance is referenced from the hottest part of the junction to the ground lead (pin 2 or 4). 2. This corresponds to the typical biasing condition of +4.23V, 35 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 °C. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 5 of 6 June 2005 AG303-86 InGaP HBT Gain Block Product Information AG303-86G (Green / Lead-free Sot-86 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum 245°C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Product Marking Outline Drawing The component will be marked with an “P” designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 1C Passes at 1000 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes at 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85 °C 335 °C/W 135 °C 1. The thermal resistance is referenced from the hottest part of the junction to the ground lead (pin 2 or 4). 2. This corresponds to the typical biasing condition of +4.23V, 35 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 °C. MTTF vs. GND Lead Temperature 10000 MTTF (million hrs) Parameter 1000 100 10 1 60 70 80 90 100 110 Ground Lead Temperature (°C) 120 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 6 of 6 June 2005