WJ AG303-86PCB Ingap hbt gain block Datasheet

AG303-86
InGaP HBT Gain Block
Product Information
Product Features
Product Description
Functional Diagram
The AG303-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 900 MHz, the AG303-86 typically provides
20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The
device combines dependable performance with consistent
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85 °C & is housed in a SOT-86
(micro-X) industry-standard SMT lead-free/green/RoHScompliant package.
GND
• DC – 6000 MHz
• +14 dBm P1dB at 900 MHz
• +26 dBm OIP3 at 900 MHz
• 20.5 dB Gain at 900 MHz
• Single Voltage Supply
• Green SOT-86 SMT Package
• Internally matched to 50 Ω
Applications
•
•
•
•
•
•
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
RF In
3 RF Out
1
2
GND
The AG303-86 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation.
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG303-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and fixed wireless.
Specifications (1)
Parameter
4
Typical Performance (1)
Units
Min
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
DC
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output IP3 (2)
Output IP2
Output P1dB
Noise Figure
Test Frequency
Gain
Output IP3 (2)
Output P1dB
Device Voltage
Device Current
17.1
Typ
900
20.4
-22
-20
+14.0
+26.1
+34
3.0
1900
18.1
+24.8
+12.7
4.23
35
Max
Parameter
6000
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
500
21.1
-21
-22
+14.0
+26.4
2.9
900
20.4
-22
-20
+14.0
+26.1
3.0
1900
18.1
-26
-16
+12.7
+24.8
3.2
2140
17.5
-25
-16
+12.4
+24.4
3.2
19.1
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Rbias = 22.1 Ω, 50 Ω System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression
on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
-40 to +85 °C
-55 to +125 °C
+5 V
+10 dBm
+250° C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
AG303-86*
AG303-86G
AG303-86PCB
*
Description
InGaP HBT Gain Block
(lead-tin SOT-86 Pkg)
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 Pkg)
700 – 2400 MHz Fully Assembled Eval. Board
This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 6 June 2005
AG303-86
InGaP HBT Gain Block
Product Information
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 22.1 Ω, Icc = 35 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
21.4
-25
-19
+14.2
+26.5
2.9
500
21.1
-21
-22
+14.0
+26.4
2.9
900
20.4
-22
-20
+14.0
+26.1
3.0
1900
18.1
-26
-16
+12.7
+24.8
3.2
2140
17.5
-25
-16
+12.4
+24.4
3.2
2400
16.9
-25
-15
+12.1
+23.9
3.2
3500
14.9
-25
-15
+9.3
5800
11.4
-25
-14
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 Ω, Icc = 35 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
Return Loss
20
18
16
14
-40 C
+25 C
1
-10
-20
-30
S11
+85 C
2
Frequency (GHz)
3
0
4
1
3
4
5
35
20
15
0
3.0
2
2.5
25
-40c
+25c
0
1
+85c
200
10
5
1
1.5
2
2.5
Frequency (GHz)
600
800
0
1000
0.5
3
3.5
20
18
16
16
Gain
18
12
16
8
4
0
-16
-12
-8
-4
Input Power (dBm)
1.5
2
2.5
3
frequency = 2000 MHz
16
12
Gain
14
8
12
4
10
0
Output Power
12
-20
1
+85 C
Output Power / Gain vs. Input Power
frequency = 900 MHz
Output Power
4
+25 C
Frequency (GHz)
14
+85 C
0
0.5
400
Gain (dB)
20
Gain (dB)
15
0
-40 C
Output Power / Gain vs. Input Power
22
+25 C
2
Frequency (MHz)
P1dB vs. Frequency
-40 C
3
0
Frequency (GHz)
20
4.5
4
30
3
4.0
Noise Figure vs. Frequency
Output Power (dBm)
1.5
3.5
Device Voltage (V)
20
1
10
5
+85 C
10
0.5
20
6
NF (dB)
25
0
30
Output IP2 vs. Frequency
40
OIP2 (dBm)
OIP3 (dBm)
Output IP3 vs. Frequency
+25 C
2
Optimal operating point
40
Frequency (GHz)
30
-40 C
S22
50
-40
12
0
60
Device Current (mA)
S11, S22 (dB)
Gain (dB)
22
P1dB (dBm)
I-V Curve
0
Output Power (dBm)
24
0
4
8
-4
-20
-16
-12
-8
-4
Input Power (dBm)
0
4
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 2 of 6 June 2005
AG303-86
InGaP HBT Gain Block
Product Information
Typical Device RF Performance (cont’d)
Supply Bias = +6 V, Rbias = 51 Ω, Icc = 35 mA
Gain vs. Frequency
Output IP3 vs. Frequency
OIP3 (dBm)
Gain (dB)
22
20
18
16
14
-40 C
12
0
+25 C
1
2
Frequency (GHz)
40
25
35
20
15
-40 C
+85 C
Output IP2 vs. Frequency
30
OIP2 (dBm)
24
+25 C
0.5
1
1.5
2
2.5
3
0
200
Frequency (GHz)
+25c
+85c
400
600
800
1000
Frequency (MHz)
Noise Figure vs. Frequency
P1dB vs. Frequency
5
20
4
15
NF (dB)
P1dB (dBm)
-40c
20
0
4
25
+85 C
10
3
30
10
5
-40 C
+25 C
3
2
1
+85 C
-40 C
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
0.5
+25 C
1
Frequency (GHz)
+85 C
1.5
2
2.5
3
Frequency (GHz)
Typical Device RF Performance
Supply Bias = +8 V, Rbias = 108 Ω, Icc = 35 mA
Output IP3 vs. Frequency
Gain vs. Frequency
OIP3 (dBm)
Gain (dB)
22
20
18
16
40
25
35
20
15
14
-40 C
12
0
+25 C
1
-40 C
+85 C
2
Frequency (GHz)
+25 C
0
4
25
-40c
+85 C
10
3
30
+25c
+85c
20
0.5
1
1.5
2
2.5
0
3
200
400
600
800
1000
Frequency (MHz)
Frequency (GHz)
Noise Figure vs. Frequency
P1dB vs. Frequency
5
20
4
15
NF (dB)
P1dB (dBm)
Output IP2 vs. Frequency
30
OIP2 (dBm)
24
10
5
-40 C
+25 C
3
2
1
+85 C
-40 C
0
0
0
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
4
0
0.5
+25 C
1
1.5
+85 C
2
2.5
3
Frequency (GHz)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 3 of 6 June 2005
AG303-86
InGaP HBT Gain Block
Product Information
Application Circuit
Vcc
Icc = 35 mA
R1
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
RF IN
RF OUT
AG303-86
C2
Blocking
Capacitor
C1
Blocking
Capacitor
Recommended Component Values
Reference
Designator
50
500
L1
820 nH
220 nH
C1, C2, C4
.018 µF
1000 pF
Frequency (MHz)
900
1900
2200
68 nH
27 nH
22 nH
100 pF
68 pF
68 pF
2500
18 nH
56 pF
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig.
L1
C1, C2
C3
C4
R1
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018 µF chip capacitor
Do Not Place
22.1 Ω 1% tolerance
Size
0603
0603
0603
Recommended Bias Resistor Values
S upply
R1 value
S ize
Voltage
5V
22.1 ohms
0603
6V
51 ohms
0805
7V
80 ohms
1206
8V
108 ohms
1210
9V
137 ohms
1210
10 V
166 ohms
1210
12 V
223 ohms
2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +5 V. A
1% tolerance resistor is recommended.
0603
Typical Device Data
S-Parameters (Vdevice = +4.23 V, ICC = 35 mA, T = 25° C, calibrated to device leads)
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
4250
4500
4750
5000
5250
5500
5750
6000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
-25.41
-178.61
21.90
177.08
-24.39
2.68
-19.43
-24.87
155.73
21.78
166.27
-24.78
2.50
-19.45
-21.45
140.47
21.52
152.92
-24.79
0.95
-22.15
-21.60
121.87
21.11
140.36
-24.66
-0.65
-20.82
-22.37
104.08
20.62
128.55
-24.69
-0.47
-19.91
-22.85
90.28
20.09
117.05
-24.39
0.10
-18.42
-23.73
71.50
19.48
106.85
-23.69
0.62
-17.78
-25.75
49.04
18.90
96.96
-23.87
-1.60
-16.51
-25.80
20.48
18.25
87.61
-23.36
-1.98
-16.04
-20.60
4.51
17.68
79.42
-23.35
-1.35
-14.44
-21.35
-10.34
17.27
73.31
-23.42
-5.50
-14.66
-21.07
-27.85
16.73
64.91
-22.38
-6.48
-14.71
-20.28
-38.57
16.22
57.01
-22.30
-5.72
-15.40
-20.61
-43.39
15.75
49.56
-22.06
-7.56
-16.08
-21.43
-46.83
15.30
42.14
-21.79
-9.98
-16.63
-23.21
-45.68
14.83
34.70
-21.14
-14.32
-16.45
-25.23
-33.68
14.43
27.45
-21.01
-19.42
-15.95
-27.97
-14.82
14.02
20.33
-20.54
-19.39
-14.63
-28.62
21.21
13.56
13.29
-19.99
-23.59
-13.70
-28.24
50.04
13.16
5.94
-19.74
-27.50
-12.98
-27.40
61.17
12.84
-0.90
-19.45
-32.13
-12.53
-32.61
78.84
12.46
-7.21
-19.53
-34.94
-12.98
-38.22
144.81
12.12
-13.47
-19.19
-37.72
-13.34
-28.58
-149.36
11.86
-19.80
-18.83
-41.09
-14.62
-24.71
-137.35
11.61
-26.11
-18.61
-44.88
-15.38
Device S-parameters are available for download off of the website at: http://www.wj.com
S22 (ang)
-6.66
-23.90
-58.28
-83.69
-103.53
-120.77
-130.98
-140.18
-146.19
-135.98
-143.15
-151.02
-161.21
-172.88
172.37
152.74
135.04
121.85
110.85
104.47
101.02
97.98
99.21
100.79
100.73
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 4 of 6 June 2005
AG303-86
InGaP HBT Gain Block
Product Information
AG303-86 (SOT-86 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an “E”
designator followed by a two-digit numeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes at 1000 V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Level 4
Passes at 1000 V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 1
Standard:
JEDEC Standard J-STD-020A
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25 mm
(.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Thermal Specifications
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85 °C
335 °C/W
135 °C
1. The thermal resistance is referenced from the hottest part
of the junction to the ground lead (pin 2 or 4).
2. This corresponds to the typical biasing condition of
+4.23V, 35 mA at an 85 °C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177 °C.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 6 June 2005
AG303-86
InGaP HBT Gain Block
Product Information
AG303-86G (Green / Lead-free Sot-86 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded
(maximum 245°C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Product Marking
Outline Drawing
The component will be marked with an “P”
designator followed by a two-digit numeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes at 1000 V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes at 1000 V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25 mm
(.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Thermal Specifications
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85 °C
335 °C/W
135 °C
1. The thermal resistance is referenced from the hottest part
of the junction to the ground lead (pin 2 or 4).
2. This corresponds to the typical biasing condition of
+4.23V, 35 mA at an 85 °C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177 °C.
MTTF vs. GND Lead Temperature
10000
MTTF (million hrs)
Parameter
1000
100
10
1
60
70
80
90
100
110
Ground Lead Temperature (°C)
120
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 6 of 6 June 2005
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