Cree® EZ500-n™ Gen 2 LED Data Sheet (Cathode-up) CxxxEZ500-Sxxx00-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES APPLICATIONS • • EZBright Power Chip LED Rf Performance General Illumination − 450 nm - 110+ mW – Aircraft − 460 nm - 110+ mW – Decorative Lighting − 470 nm - 90+ mW – Task Lighting − 527 nm - 30+ mW – Outdoor Illumination – Projection Lighting • Lambertian Radiation • Conductive Epoxy, Solder Paste or Preforms, • White LEDs or Flux Eutectic Attach • Crosswalk Signals • Low Forward Voltage – 3.2 V typ at 150 mA • Backlighting • Single Wire Bond Structure • Automotive • Dielectric Passivation Across Epi Surface .A CPR3EB Rev Data Sheet: CxxxEZ500-Sxxx00-2 Chip Diagram Backside Ohmic Metallization Mesa (Junction) 450 x 450 µm Cathode (-), 130 x 130 µm 480 x 480 µm Thickness 170 µm Top View Side View Subject to change without notice. www.cree.com Anode (+) Bottom View 1 Maximum Ratings at TA = 25°C Note 1 CxxxEZ500-Sxxx00-2 DC Forward Current 300 mA Peak Forward Current 400 mA LED Junction Temperature Note 3 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA Part Number Note 2 Forward Voltage (VF, V) Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ500-Sxxx00-2 2.8 3.2 3.6 2 19 C460EZ500-Sxxx00-2 2.8 3.2 3.6 2 20 C470EZ500-Sxxx00-2 2.8 3.2 3.6 2 23 C527EZ500-Sxxx00-2 2.8 3.3 3.6 2 35 Mechanical Specifications CxxxEZ500-Sxxx00-2 Description Dimension Tolerance P-N Junction Area (µm) 450 x 450 ±40 Chip Area (µm) 480 x 480 ±40 170 ±25 Chip Thickness (µm) Top Au Bond Pad Diameter (µm) Au Bond Pad Thickness (µm) Back Contact Metal Area (µm) Back Contact Metal Thickness (µm) 130 x 130 ±15 3.0 ±1.0 480 x 480 ±40 3.0 ±1.0 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 300 Maximum Operating Current (mA) 3. 350 250 200 Rth j-a = 10 °C/W Rth j-a = 20 °C/W Rth j-a = 30 °C/W Rth j-a = 40 °C/W 150 100 50 0 50 60 70 80 90 100 Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. 2 CPR3EB Rev. A 110 120 130 140 150 Ambient Temperature (°C) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxEZ500-Sxxx00-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ500-Sxxx00-2) orders may be filled with any or all bins (CxxxEZ500-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant flux values are measured using Au-plated headers without an encapsulant. Radiant Flux (mW) C450EZ500-S11000-2 C450EZ500-0421-2 C450EZ500-0422-2 C450EZ500-0423-2 C450EZ500-0424-2 C450EZ500-0417-2 C450EZ500-0418-2 C450EZ500-0419-2 C450EZ500-0420-2 C450EZ500-0413-2 C450EZ500-0414-2 C450EZ500-0415-2 C450EZ500-0416-2 C450EZ500-0409-2 C450EZ500-0410-2 C450EZ500-0411-2 C450EZ500-0412-2 C450EZ500-0405-2 C450EZ500-0406-2 C450EZ500-0407-2 C450EZ500-0408-2 190 170 150 130 110 445 447.5 450 452.5 455 Dominant Wavelength (nm) Radiant Flux (mW) C460EZ500-S11000-2 C460EZ500-0421-2 C460EZ500-0422-2 C460EZ500-0423-2 C460EZ500-04124-2 C460EZ500-0417-2 C460EZ500-0418-2 C460EZ500-0419-2 C460EZ500-0420-2 C460EZ500-0413-2 C460EZ500-0414-2 C460EZ500-0415-2 C460EZ500-0416-2 C460EZ500-0409-2 C460EZ500-0410-2 C460EZ500-0411-2 C460EZ500-0412-2 C460EZ500-0405-2 C460EZ500-0406-2 C460EZ500-0407-2 C460EZ500-0408-2 190 170 150 130 110 455 457.5 460 462.5 465 Dominant Wavelength (nm) Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. 3 CPR3EB Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxEZ500-Sxxx00-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ500-Sxxx00-2) orders may be filled with any or all bins (CxxxEZ500-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant flux values are measured using Au-plated headers without an encapsulant. Radiant Flux (mW) C470EZ500-S09000-2 C470EZ500-0417-2 C470EZ500-0418-2 C470EZ500-0419-2 C470EZ500-0420-2 C470EZ500-0413-2 C470EZ500-04014-2 C470EZ500-04015-2 C470EZ500-04016-2 C470EZ500-0409-2 C470EZ500-0410-2 C470EZ500-0411-2 C470EZ500-0412-2 C470EZ500-0405-2 C470EZ500-0406-2 C470EZ500-0407-2 C470EZ500-0408-2 C470EZ500-0401-2 C470EZ500-0402-2 C470EZ500-0403-2 C470EZ500-0404-2 170 150 130 110 90 465 467.5 470 472.5 475 Dominant Wavelength (nm) Radiant Flux (mW) C527EZ500-S3000-2 C527EZ500-0413-2 C527EZ500-0414-2 C527EZ500-0415-2 C527EZ500-0410-2 C527EZ500-0411-2 C527EZ500-0412-2 C527EZ500-0407-2 C527EZ500-0408-2 C527EZ500-0409-2 C527EZ500-0404-2 C527EZ500-0405-2 C527EZ500-0406-2 C527EZ500-0401-2 C527EZ500-0402-2 C527EZ500-0403-2 70 60 50 40 30 520 525 530 535 Dominant Wavelength (nm) Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. 4 CPR3EB Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Characteristic Curves These are representative measurements for the EZBright Power Chip LED products. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Intensity vs. Forward Current Relative Light Intensity Vs Junction Temperature Relative Light Intensity Relative Light Intensity 250% 200% 150% 100% 50% 0% 0 100 200 300 100% 95% 90% 85% 80% 75% 70% 65% 400 25 DW Shift (nm) D W Shift (nm) 5 0 -5 100 200 300 400 6 5 4 3 2 1 0 -1 -2 25 If (mA) 150 150 0.000 Voltage Shift (V) If (mA) 50 75 100 125 Junction Temperature (°C) 2 2.5 3 Vf (V) 3.5 4 -0.100 -0.200 -0.300 -0.400 -0.500 -0.600 25 50 CPR3EB Rev. A 75 100 125 150 Junction Temperature (°C) Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. 5 125 Voltage Shift Vs Junction Temperature Forward Current vs. Forward Voltage 400 350 300 250 200 150 100 50 0 100 Dominant Wavelength Shift Vs Junction Temperature Wavelength Shift vs. Forward Current 10 0 75 Junction Temperature (°C) If (mA) -10 50 Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. 6 CPR3EB Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips