NTE2558 Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode Features: D High Reliability D High Collector–Base Breakdown Voltage D On–Chip Damper Diode Applications: D High–Voltage, High–Power Switching D Induction Cookers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 800V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 600 mA DC Current Gain hFE VCE = 5V, IC = 15A 25 – – 800 – – V Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA Collector–Emitter Saturation Voltage VCE(sat) IC = 15A, IB = 0.75A – – 3.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 15A, IB = 0.75A – – 2.5 V 150 0 – – V IEC = 15A – – 2.0 V IC = 15A, IB1 = 1A, IB2 = –5A, VCC = 200V, RL = 13.3Ω – – 2.0 µs Collector–Base Breakdown Voltage Diode Forward Voltage Fall Time V(BR)CBO IC = 5mA, IE = 0 VF tf Schematic Diagram C B E .810(20.57) Max .204 (5.2) .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 (2.5) .215 (5.45) .787 (20.0) .040 (1.0) B C E Note: Collector connected to heat sink. .023 (0.6)