IKP04N60T pIJIKI04N60Tdsadsa TrenchStop® Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5μs • Designed for : - Frequency Converters - Drives • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed PG-TO-220-3-1 - low VCE(sat) • Positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G PG-TO-262-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IKP04N60T 600 V 4A 1.5 V 175 °C K04T60 PG-TO-220-3-1 IKI04N60T 600 V 4A 1.5 V 175 °C K04T60 PG-TO-262-3 Type E Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCE DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 12 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 12 Diode forward current, limited by Tjmax IF 600 Unit V A 8 4 TC = 25°C 8 TC = 100°C 4 Diode pulsed current, tp limited by Tjmax IFpuls 12 Gate-emitter voltage VGE ±20 V tSC 5 μs Power dissipation TC = 25°C Ptot 42 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time 2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.5 Feb. 09 TrenchStop® Series IKP04N60T pIJIKI04N60Tdsadsa Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 3.5 K/W RthJCD 5 RthJA 62 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25° C - 1.5 2.05 T j = 17 5° C - 1.9 - T j = 25° C - 1.65 2.05 T j = 17 5° C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15V, I C = 4A V G E = 0V, I F = 4A Gate-emitter threshold voltage VGE(th) I C = 60µA,V C E =V G E Zero gate voltage collector current ICES V C E = 600V , V G E = 0V µA T j = 25° C - - 40 T j = 17 5° C - - 1000 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 Transconductance gfs V C E = 20V, I C = 4A - 2.2 - Integrated gate resistor RGint - nA S Ω Dynamic Characteristic Input capacitance Ciss V C E = 25V, - 252 - Output capacitance Coss V G E = 0V, - 20 - Reverse transfer capacitance Crss f= 1 M Hz - 7.5 - Gate charge QGate V C C = 4 80V, I C = 4A - 27 - nC Internal emitter inductance LE - 7 - nH - 36 - A pF V G E = 1 5V measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) V G E = 1 5V,t S C ≤5μs V C C = 400V, T j ≤ 150° C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.5 Feb. 09 TrenchStop® Series IKP04N60T pIJIKI04N60Tdsadsa Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 14 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 84 - Ets T j = 25° C, V C C = 4 00V, I C = 4A , V G E = 0/ 1 5V , R G = 47 Ω, L σ 1 ) = 150nH, C σ 1 ) =47pF Energy losses include “tail” and diode reverse recovery. - 145 - Diode reverse recovery time trr T j = 25° C, - 28 - ns Diode reverse recovery charge Qrr V R = 4 00V, I F = 4A, - 79 - nC Diode peak reverse recovery current Irrm di F / dt = 61 0A / μs Diode peak rate of fall of reverse recovery current during t b di r r / d t - 7 - - 164 - - 43 - - 61 - µJ Anti-Parallel Diode Characteristic - 5.3 - A - 346 - A/μs Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. Typ. max. - 14 - - 10 - - 185 - - 83 - - 99 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 97 - Ets T j = 17 5° C, V C C = 4 00V, I C = 4A , V G E = 0/ 1 5V , R G = 47 Ω L σ 1 ) = 150nH, C σ 1 ) =47pF Energy losses include “tail” and diode reverse recovery. - 196 - Diode reverse recovery time trr T j = 17 5° C - 95 - ns Diode reverse recovery charge Qrr V R = 4 00V, I F = 4A, - 291 - nC Diode peak reverse recovery current Irrm di F / dt = 61 0A / μs - 6.6 - A Diode peak rate of fall of reverse recovery current during t b di r r / d t - 253 - A/μs µJ Anti-Parallel Diode Characteristic 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.5 Feb. 09 IKP04N60T pIJIKI04N60Tdsadsa TrenchStop® Series IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A T C =80°C 8A T C =110°C 6A 4A Ic 2A 0A 10H z 100H z 1kH z 10kH z 50µs DC 10V 100V 1ms 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 8A IC, COLLECTOR CURRENT POWER DISSIPATION 1A 1V 100kH z 40W Ptot, 10µs 0.1A Ic f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 47Ω) 30W 20W 10W 0W 25°C tp=2µs 10A 12A 50°C 75°C 4A 2A 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 6A 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.5 Feb. 09 IKP04N60T pIJIKI04N60Tdsadsa TrenchStop® Series 8A 10A V GE =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 15V 13V 6A 11V 9V 4A 7V 2A 13V 6A 11V 9V 4A 7V 0A 0V 1V 2V 3V 0V 8A 6A 4A 2A T J = 1 7 5 °C 2 5 °C 0V 2V 4V 6V 8V 2V 3V 2.5V IC =8A 2.0V 1.5V IC =4A 1.0V IC =2A 0.5V 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 15V 2A 0A 0A V GE =20V 8A 5 Rev. 2.5 Feb. 09 IKP04N60T pIJIKI04N60Tdsadsa TrenchStop® Series t d(off) 100ns tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) tr 100ns tf t d(on) 10ns tr 1ns 0A 2A 4A 6A 50Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 47Ω, Dynamic test circuit in Figure E) 100Ω 150Ω 200Ω 250Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E) t d(off) 100ns t, SWITCHING TIMES tf t d(on) 10ns tr 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, RG=47Ω, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 60 µA) 6 Rev. 2.5 Feb. 09 IKP04N60T pIJIKI04N60Tdsadsa TrenchStop® Series *) E on and E ts include losses *) E on and E ts include losses E, SWITCHING ENERGY LOSSES E ts * 0.3m J E off 0.2m J E on * 0.1m J 0.0m J 0A 2A 4A E, SWITCHING ENERGY LOSSES due to diode recovery du e to diode recovery 0.4 mJ E ts* 0.3 mJ E off 0.2 mJ E on* 0.1 mJ 0.0 mJ 25Ω 50Ω 6A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 47Ω, Dynamic test circuit in Figure E) E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES E ts * 100µJ E off 75µJ 50µJ E on* 25µJ 0µJ 25°C 50°C 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 4A, RG = 47Ω, Dynamic test circuit in Figure E) Power Semiconductors 200Ω 250Ω *) E on and E ts include losses due to diode recovery 150µJ 125µJ 150Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 4A, Dynamic test circuit in Figure E) *) E on and E ts include losses 175µJ 100Ω due to diode recovery 0.25m J 0.20m J 0.15m J E ts * 0.10m J E off 0.05m J E on * 0.00m J 300V 350V 400V 450V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 4A, RG = 47Ω, Dynamic test circuit in Figure E) 7 Rev. 2.5 Feb. 09 IKP04N60T pIJIKI04N60Tdsadsa TrenchStop® Series 1 5V 12 0V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 48 0V 1 0V 100pF C oss 5V 10pF C rss 0V 0nC 5 nC 0V 10 nC 15 nC 2 0n C 2 5n C 3 0nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=4 A) 10V 20V 30V 40V 50V 60V 70V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 60A 50A 40A 30A 20A tSC, IC(sc), short circuit COLLECTOR CURRENT 12µs 10A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.5 Feb. 09 IKP04N60T pIJIKI04N60Tdsadsa TrenchStop® Series ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 0 10 K/W 0.2 R,(K/W) 0.38216 0.68326 1.49884 0.93550 0.1 0.05 -1 10 K/W τ, (s) -2 5.16*10 -3 7.818*10 -4 9*10 -4 1.134*10 R1 0.02 0.01 R2 C1=τ1/R1 C2=τ2/R2 single pulse 1µs 10µs 100µs 1ms 0.2 0 10 K/W R,(K/W) 0.29183 0.79081 1.86970 2.04756 0.1 0.05 -1 10 K/W R1 0.02 10µs 100µs 160ns 120ns 80ns TJ=25°C 40ns Qrr, REVERSE RECOVERY CHARGE TJ=175°C R2 C1=τ1/R1 C2=τ2/R2 1ms 10ms 100ms tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 0.35µC 200ns 6 single pulse 1µs 280ns 240ns τ, (s) -2 7.018*10 -2 1.114*10 -3 1.236*10 -4 2.101*10 0.01 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) trr, REVERSE RECOVERY TIME D=0.5 T J =175°C 0.30µC 0.25µC 0.20µC T J =25°C 0.15µC 0.10µC 0.05µC 0.00µC 0ns 400A/µs 400A/µs 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=4A, Dynamic test circuit in Figure E) Power Semiconductors 9 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 4A, Dynamic test circuit in Figure E) Rev. 2.5 Feb. 09 TrenchStop® Series T J =175°C T J=175°C 8A 6A T J =25°C 4A 2A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT 10A 400A/µs T J=25°C -200A/µs -100A/µs 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 4A, Dynamic test circuit in Figure E) 400A/µs 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=4A, Dynamic test circuit in Figure E) 10A I F =8A 2.0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT -300A/µs 0A/µs 0A 8A 6A T J =25°C 4A 175°C 4A 1.5V 2A 1.0V 0.5V 2A 0A IKP04N60T pIJIKI04N60Tdsadsa 0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 10 0.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.5 Feb. 09 TrenchStop® Series PG-TO-220-3-1 Power Semiconductors 11 IKP04N60T pIJIKI04N60Tdsadsa Rev. 2.5 Feb. 09 TrenchStop® Series Power Semiconductors 12 IKP04N60T pIJIKI04N60Tdsadsa Rev. 2.5 Feb. 09 IKP04N60T pIJIKI04N60Tdsadsa TrenchStop® Series i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity C σ =40pF. Figure B. Definition of switching losses Power Semiconductors 13 Rev. 2.5 Feb. 09 TrenchStop® Series IKP04N60T pIJIKI04N60Tdsadsa Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2/16/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2.5 Feb. 09