NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com V(BR)DSS Applications 20 V • Load/Power Switch for Portables • Load/Power Switch for Computing • DC−DC Conversion RDS(on) TYP ID MAX (Note 1) 70 m @ 4.5 V 3.6 A 85 m @ 2.5 V 3.1 A N−Channel D MAXIMUM RATINGS (TJ= 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V ID 3.2 A 2.4 A 1.25 W Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C Steady State Power Dissipation (Note 1) Steady State Pulsed Drain Current tp = 10 s PD G S 3 IDM 10.0 A TJ, Tstg −55 to 150 °C Continuous Source Current (Body Diode) IS 1.6 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain 1 2 SOT−23 CASE 318 STYLE 21 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TR1 1 Gate TR1 M M Parameter 2 Source = Specific Device Code = Date Code THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient (Note 1) RJA 100 °C/W Junction−to−Ambient (Note 2) RJA 300 ORDERING INFORMATION Device NTR4501NT1 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. NTR4501NT1G NTR4501NT3 NTR4501NT3G Package Shipping† SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 10000 / Tape & Reel SOT−23 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 4 1 Publication Order Number: NTR4501N/D NTR4501N Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 A 20 24.5 V 22 mV/°C OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS/TJ IDSS VGS = 0 V TJ = 25°C 1.5 A VDS = 16 V TJ = 85°C 10 A ±100 nA IGSS VDS = 0 V, VGS = ±12 V Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 A Negative Threshold Temperature Coefficient VGS(TH)/TJ Gate−to−Source Leakage Current ON CHARACTERISTICS Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.65 1.2 −2.3 V mV/°C VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 85 105 VDS = 5.0 V, ID = 3.6 A 9 m S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 200 VGS = 0 V, f = 1.0 MHz, VDS = 10 V 80 pF 50 QG(TOT) 2.4 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A Gate−to−Source Gate Charge QGS Gate−to−Drain Charge QGD 0.6 td(on) 6.5 6.0 0.5 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 tf 12 ns 12 3 SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Charge ta tb VGS = 0 V, ISD = 1.6 A 0.8 1.2 V 7.1 VGS = 0 V, dIS/dt = 100 A/s, A/s IS = 1.6 A QRR 5 1.9 3.0 3. Pulse Test: Pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTR4501N 7.0 VGS = 2.0 V T = 25°C J VGS = 10 V VGS = 2.2 V 6.0 5.0 VGS = 3.0 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 7.0 VGS = 1.8 V 4.0 . 3.0 VGS = 1.6 V 2.0 VGS = 1.4 V 1.0 VDS ≥ 10 V 6.0 5.0 4.0 3.0 2.0 1.0 TJ = 100°C VGS = 1.2 V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 1.0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0.20 ID = 3.2 A TJ = 25°C 0.10 0.05 1.0 2.0 4.0 3.0 5.0 2.0 2.5 3.0 3.5 Figure 2. Transfer Characteristics 0.25 0.15 1.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 6.0 0.10 TJ = 25°C VGS = 2.5 V 0.09 0.08 VGS = 4.5 V 0.07 0.06 0.05 0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.4 1000 VGS = 0 V 1.2 1.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C TJ = 55°C ID = 3.2 A VGS = 4.5 V 0.8 0.6 −50 TJ = 150°C 100 10 TJ = 100°C 1.0 −25 0 25 50 75 100 125 150 2 TJ, JUNCTION TEMPERATURE (°C) 6 10 14 18 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 5.0 350 VGS = 0 V TJ = 25°C 300 15 QT C, CAPACITANCE (pF) 4.0 250 Ciss 200 100 Coss Crss 3 5 8 10 13 QGD QGS 6 3 1.0 0 0 VGS 9 2.0 50 15 20 18 TJ = 25°C ID = 3.2 A 0 0 0.5 1.0 1.5 2.0 2.5 DRAIN−TO−SOURCE VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 0 3.0 IS, SOURCE CURRENT (AMPS) 4 VDS = 10 V ID = 3.2 A VGS = 4.5 V t, TIME (ns) 12 VDS 3.0 150 td(off) tr 10 td(on) tf 1 VGS = 0 V TJ = 25°C 3 2 1 0 0 1 10 100 0.3 RG, GATE RESISTANCE () 0.6 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTR4501N 1.2 NTR4501N PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 NTR4501N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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