isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ10A DESCRIPTION ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application APPLICATIONS ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT 50 V ±20 V Drain Current-continuous@ TC=37℃ 17 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Ptot Tj Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro MAX UNIT 1.67 ℃/W 75 ℃/W 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ10A ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 50 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 10A 0.12 Ω Gate Source Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 50V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 34A; VGS= 0 1.5 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn