MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector −Base Voltage MMBT2222LT1 MMBT2222ALT1 VCBO Emitter −Base Voltage MMBT2222LT1 MMBT2222ALT1 VEBO Collector Current − Continuous Value Unit 2 EMITTER Vdc 30 40 MARKING DIAGRAM Vdc 60 75 3 Vdc 1 2 5.0 6.0 IC 600 mAdc Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance Junction−to−Ambient RJA 556 °C/W PD 300 mW 2.4 mW/°C xxx M SOT−23 CASE 318 Style 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C xxx = Specific Device Code = (M1B = MMBT2222LT1, = 1P = MMBT2222ALT1) M = Date Code ORDERING INFORMATION Package Shipping† SOT−23 3000/Tape & Reel MMBT2222LT1G SOT−23 (Pb−Free) 3000/Tape & Reel MMBT2222ALT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel MMBT2222LT3 SOT−23 10,000/Tape & Reel MMBT2222ALT3 SOT−23 10,000/Tape & Reel Device Thermal Resistance Junction−to−Ambient RJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MMBT2222LT1 MMBT2222ALT1G MMBT2222ALT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 September, 2004 − Rev. 5 1 Publication Order Number: MMBT2222LT1/D MMBT2222LT1, MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 − − Vdc Collector −Base Breakdown Voltage (IC = 10 Adc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 Adc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 − − Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX − 10 nAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222 MMBT2222A MMBT2222 MMBT2222A ICBO − − − − 0.01 0.01 10 10 Adc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO − 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL − 20 nAdc 35 50 75 35 100 50 30 40 − − − − 300 − − − MMBT2222 MMBT2222A − − 0.4 0.3 MMBT2222 MMBT2222A − − 1.6 1.0 MMBT2222 MMBT2222A − 0.6 1.3 1.2 MMBT2222 MMBT2222A − − 2.6 2.0 250 300 − − − 8.0 − − 30 25 2.0 0.25 8.0 1.25 − − 8.0 4.0 50 75 300 375 ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 3) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3) (IC = 500 mAdc, VCE = 10 Vdc) (Note 3) Collector −Emitter Saturation Voltage (Note 3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (Note 3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMBT2222A only MMBT2222 MMBT2222A − VCE(sat) Vdc VBE(sat) Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MMBT2222 MMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MHz Cobo pF Cibo MMBT2222 MMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Small −Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A pF hie k X 10− 4 hre hfe 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 − MMBT2222LT1, MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 5.0 25 35 200 − 150 − 4.0 Unit SMALL−SIGNAL CHARACTERISTICS Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A mhos hoe rb, Cc Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MMBT2222A ps NF dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time (VCC = 30 Vdc, VBE(off) = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 60 Storage Time Fall Time ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 s, DUTY CYCLE ≈ 2.0% +16 V 0 −2 V 200 +16 V 1.0 to 100 s, DUTY CYCLE ≈ 2.0% 0 1 k < 2 ns −14 V CS* < 10 pF 1k < 20 ns 1N914 −4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 3 200 CS* < 10 pF MMBT2222LT1, MMBT2222ALT1 hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 −55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region http://onsemi.com 4 3.0 5.0 10 20 30 50 MMBT2222LT1, MMBT2222ALT1 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts − 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn −On Time IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 8.0 500 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 300 10 RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 2.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 20 30 CAPACITANCE (pF) 200 Figure 6. Turn −Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 100 70 50 Figure 9. Capacitances 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current−Gain Bandwidth Product http://onsemi.com 5 MMBT2222LT1, MMBT2222ALT1 1.0 +0.5 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 0.6 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0.8 1.0 V VBE(on) @ VCE = 10 V 0.4 0.2 RVC for VCE(sat) −0.5 −1.0 −1.5 RVB for VBE −2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) −2.5 500 1.0 k 0.1 0.2 Figure 11. “On” Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 6 500 MMBT2222LT1, MMBT2222ALT1 PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR B S 2 G C D H K J SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MMBT2222LT1, MMBT2222ALT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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