ON MMBT2222L General purpose transistor Datasheet

MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose
Transistors
NPN Silicon
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Features
COLLECTOR
3
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MMBT2222LT1
MMBT2222ALT1
VCEO
Collector −Base Voltage
MMBT2222LT1
MMBT2222ALT1
VCBO
Emitter −Base Voltage
MMBT2222LT1
MMBT2222ALT1
VEBO
Collector Current − Continuous
Value
Unit
2
EMITTER
Vdc
30
40
MARKING
DIAGRAM
Vdc
60
75
3
Vdc
1
2
5.0
6.0
IC
600
mAdc
Symbol
Max
Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance
Junction−to−Ambient
RJA
556
°C/W
PD
300
mW
2.4
mW/°C
xxx M
SOT−23
CASE 318
Style 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
xxx = Specific Device Code
= (M1B = MMBT2222LT1,
= 1P = MMBT2222ALT1)
M = Date Code
ORDERING INFORMATION
Package
Shipping†
SOT−23
3000/Tape & Reel
MMBT2222LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
MMBT2222ALT1
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
MMBT2222LT3
SOT−23
10,000/Tape & Reel
MMBT2222ALT3
SOT−23
10,000/Tape & Reel
Device
Thermal Resistance
Junction−to−Ambient
RJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBT2222LT1
MMBT2222ALT1G
MMBT2222ALT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 5
1
Publication Order Number:
MMBT2222LT1/D
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
−
−
Vdc
Collector −Base Breakdown Voltage (IC = 10 Adc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
−
−
Vdc
Emitter −Base Breakdown Voltage (IE = 10 Adc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
−
−
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
ICEX
−
10
nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
ICBO
−
−
−
−
0.01
0.01
10
10
Adc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
MMBT2222A
IEBO
−
100
nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
IBL
−
20
nAdc
35
50
75
35
100
50
30
40
−
−
−
−
300
−
−
−
MMBT2222
MMBT2222A
−
−
0.4
0.3
MMBT2222
MMBT2222A
−
−
1.6
1.0
MMBT2222
MMBT2222A
−
0.6
1.3
1.2
MMBT2222
MMBT2222A
−
−
2.6
2.0
250
300
−
−
−
8.0
−
−
30
25
2.0
0.25
8.0
1.25
−
−
8.0
4.0
50
75
300
375
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
hFE
MMBT2222A only
MMBT2222
MMBT2222A
−
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
MMBT2222
MMBT2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MHz
Cobo
pF
Cibo
MMBT2222
MMBT2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
pF
hie
k
X 10− 4
hre
hfe
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
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2
−
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
5.0
25
35
200
−
150
−
4.0
Unit
SMALL−SIGNAL CHARACTERISTICS
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
mhos
hoe
rb, Cc
Noise Figure
(IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MMBT2222A
ps
NF
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
60
Storage Time
Fall Time
ns
ns
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
+16 V
0
−2 V
200
+16 V
1.0 to 100 s,
DUTY CYCLE ≈ 2.0%
0
1 k
< 2 ns
−14 V
CS* < 10 pF
1k
< 20 ns
1N914
−4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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3
200
CS* < 10 pF
MMBT2222LT1, MMBT2222ALT1
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
−55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
Figure 4. Collector Saturation Region
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4
3.0
5.0
10
20
30
50
MMBT2222LT1, MMBT2222ALT1
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts − 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
500
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k
50 A, RS = 4.0 k
8.0
500
6.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
300
10
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
4.0
2.0
IC = 50 A
100 A
500 A
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
Ceb
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
f, FREQUENCY (kHz)
20
0.2 0.3
0
50
50 100
20
30
CAPACITANCE (pF)
200
Figure 6. Turn −Off Time
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
Figure 9. Capacitances
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 10. Current−Gain Bandwidth Product
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5
MMBT2222LT1, MMBT2222ALT1
1.0
+0.5
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
0.6
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
VBE(on) @ VCE = 10 V
0.4
0.2
RVC for VCE(sat)
−0.5
−1.0
−1.5
RVB for VBE
−2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
−2.5
500 1.0 k
0.1 0.2
Figure 11. “On” Voltages
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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6
500
MMBT2222LT1, MMBT2222ALT1
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
A
L
3
1
V
INCHES
MILLIMETERS
DIM MIN
MAX
MIN
MAX
A 0.1102 0.1197
2.80
3.04
B 0.0472 0.0551
1.20
1.40
C 0.0350 0.0440
0.89
1.11
D 0.0150 0.0200
0.37
0.50
G 0.0701 0.0807
1.78
2.04
H 0.0005 0.0040 0.013
0.100
J 0.0034 0.0070 0.085
0.177
K 0.0140 0.0285
0.35
0.69
L 0.0350 0.0401
0.89
1.02
S 0.0830 0.1039
2.10
2.64
V 0.0177 0.0236
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
B S
2
G
C
D
H
K
J
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MMBT2222LT1, MMBT2222ALT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MMBT2222LT1/D
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