HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 36N100 VDSS ID25 RDS(on) = 1000V = 36A Ω = 0.24Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability 36 A IDM TC = 25°C, pulse width limited by TJM IAR A TC = 25°C 36 A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J 5 V/ns 700 W IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Weight Symbol Test Conditions VGS = 0 V, ID = 3 mA 1000 VGH(th) V DS = VGS, ID = 8 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2001 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS TJ = 25°C TJ = 125°C S G 144 dv/dt miniBLOC, SOT-227 B (IXFN) E153432 V 5.0 V ±200 nA 100 2 µA mA 0.24 Ω S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • • • • Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages • Easy to mount • • Space savings High power density 98520C (02/01) IXFN 36N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 • ID25, pulse test 18 40 S 9200 pF 1200 pF Crss 300 pF td(on) 41 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), ns ns 30 ns Qg(on) VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 380 nC 65 nC 185 nC RthJC 0.18 K/W Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = IS, -di/dt = 100 A/µs, VR = 100 VTJ = 25°C TJ =125°C TJ = 25°C QRM IRM K/W 0.05 RthCK Source-Drain Diode M4 screws (4x) supplied Dim. tf Qgs 55 110 miniBLOC, SOT-227 B 36 A 144 A 1.3 V 180 330 2 8 ns ns µC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFN 36N100 50 80 VGS =10V 9V 8V 7V ID - Amperes 60 TJ = 125OC VGS =10V 9V 8V 7V 6V 40 ID - Amperes TJ = 25OC 40 6V 20 6V 30 20 5V 10 5V 0 0 0 4 8 12 16 0 20 5 10 15 20 25 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 2.2 VGS = 10V VGS = 10V 2.2 RDS(ON) - Normalized RDS(ON) - Normalized 2.0 TJ = 125OC 1.8 1.6 1.4 1.2 O TJ = 25 C 1.9 ID = 36A 1.6 ID =18A 1.3 1.0 1.0 25 0.8 0 10 20 30 40 50 50 75 RDS(on) normalized to 0.5 ID25 value vs. ID 40 50 32 40 24 16 8 30 TJ = 125oC 20 TJ = 25oC 10 0 -50 -25 0 25 50 75 100 125 150 T C - Degrees C Figure 5. Drain Current vs. Case Temperature © 2001 IXYS All rights reserved 150 RDS(on) normalized to 0.5 ID25 value vs. TJ Figure 4. ID - Amperes ID - Amperes 125 T J - Degrees C ID - Amperes Figure 3. 100 0 3.5 4.0 4.5 5.0 5.5 6.0 VGS - Volts Figure 6. Admittance Curves 6.5 7.0 IXFN 36N100 12 30000 VDS = 500 V ID = 18 A IG = 10 mA 8 Ciss 10000 Capacitance - pF VGS - Volts 10 6 4 f = 100kHz Coss 1000 Crss 2 100 0 0 100 200 300 400 500 0 600 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Figure 8. Capacitance Curves Figure 7. Gate Charge 100 ID - Amperes 80 60 TJ = 125OC 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode R(th)JC - K/W 1.000 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025