EC733338 N-Channel MOSFET Description The EC733338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features ● VDS = 30V,ID =4A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 47mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking 3338 Device Device Package EC733338B1R Quantity SOT23-3L 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID 4 A IDM 20 A PD 1.25 W TJ,TSTG -55 To 150 ℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Parameter Thermal Resistance,Junction-to-Ambient (Note 2) E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 4 Symbol Limit Unit RθJA 100 ℃/W 4H07N-Rev.F001 EC733338 N-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 0.5 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.5 3.0 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=2.8A 41 65 mΩ VGS=10V, ID=3.5A 30 47 mΩ VDS=5V,ID=2.5A 7 S 310 PF 60 PF OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.0 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 30 PF Turn-on Delay Time td(on) 7 nS Turn-on Rise Time tr VDS=15V,VGS=10V,RGEN=6Ω 12 nS td(off) ID=1A 15 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf 5 nS Total Gate Charge Qg 6 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 1 nC VDS=15V,ID=2.5A,VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.25A 0.8 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 4 4H07N-Rev.F001 N-Channel MOSFET EC733338 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 4 4H07N-Rev.F001 N-Channel MOSFET EC733338 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 4 4H07N-Rev.F001