E-CMOS EC733338 N-channel mosfet Datasheet

EC733338
N-Channel MOSFET
Description
The EC733338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is
suitable for use as a load switch or in PWM applications.
Features
● VDS = 30V,ID =4A
RDS(ON) < 65mΩ @ VGS=4.5V
RDS(ON) < 47mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
3338
Device
Device Package
EC733338B1R
Quantity
SOT23-3L
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID
4
A
IDM
20
A
PD
1.25
W
TJ,TSTG
-55 To 150
℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance,Junction-to-Ambient (Note 2)
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 4
Symbol
Limit
Unit
RθJA
100
℃/W
4H07N-Rev.F001
EC733338
N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
0.5
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.5
3.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=2.8A
41
65
mΩ
VGS=10V, ID=3.5A
30
47
mΩ
VDS=5V,ID=2.5A
7
S
310
PF
60
PF
OFF CHARACTERISTICS
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1.0
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
30
PF
Turn-on Delay Time
td(on)
7
nS
Turn-on Rise Time
tr
VDS=15V,VGS=10V,RGEN=6Ω
12
nS
td(off)
ID=1A
15
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
5
nS
Total Gate Charge
Qg
6
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
Qgd
1
nC
VDS=15V,ID=2.5A,VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.25A
0.8
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2
2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 4
4H07N-Rev.F001
N-Channel MOSFET
EC733338
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 4
4H07N-Rev.F001
N-Channel MOSFET
EC733338
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES:
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 4
4H07N-Rev.F001
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