IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Package PG-TO220-3 PG-TO263-3 PG-TO262-3 Marking 126N10N 123N10N 126N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 58 T C=100 °C 42 Unit A Pulsed drain current2) I D,pulse T C=25 °C 232 Avalanche energy, single pulse E AS I D=46 A, R GS=25 Ω 70 mJ Gate source voltage V GS ±20 V Power dissipation P tot 94 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) Rev. 2.3 55/175/56 J-STD20 and JESD22 See figure 3 page 1 2010-06-23 IPP126N10N3 G IPB123N10N3 G Parameter IPI126N10N3 G Values Symbol Conditions Unit min. typ. max. - - 1.6 minimal footprint - - 62 6 cm2 cooling area3) - - 40 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=46 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=46 A, TO 220, TO 262 - 11.0 12.6 mΩ V GS=6 V, I D=23 A, TO 220, TO 262 - 13.6 23.5 V GS=10 V, I D=46 A, TO 263 - 10.7 12.3 V GS=6 V, I D=23 A, TO263 - 13.3 23.2 - 1.1 - Ω 29 57 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=46 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2010-06-23 IPP126N10N3 G IPB123N10N3 G Parameter IPI126N10N3 G Values Symbol Conditions Unit min. typ. max. - 1880 2500 - 330 439 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 14 - Turn-on delay time t d(on) - 14 - Rise time tr - 8 - Turn-off delay time t d(off) - 24 - Fall time tf - 5 - Gate to source charge Q gs - 9 - Gate to drain charge Q gd - 5 - - 9 - V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=46 A, R G=1.6 Ω pF ns Gate Charge Characteristics 6) V DD=50 V, I D=46 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 26 35 Gate plateau voltage V plateau - 4.9 - Output charge Q oss - 35 46 nC - - 58 A - - 232 - 0.9 1.2 V - 61 - ns - 103 - nC V DD=50 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 6) Rev. 2.3 T C=25 °C V GS=0 V, I F=46 A, T j=25 °C V R=15 V, I F=46 A , di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2010-06-23 IPP126N10N3 G IPB123N10N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 IPI126N10N3 G 60 50 80 40 I D [A] P tot [W] 60 30 40 20 20 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 10 µs 102 100 I D [A] Z thJC [K/W] 100 µs 0.2 0.1 0.05 1 ms 101 0.5 10-1 0.02 0.01 10 ms single pulse DC 100 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.3 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-06-23 IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 25 180 4.5 V 10 V 160 20 120 R DS(on) [mΩ] 140 I D [A] 5V 7.5 V 6V 100 80 5.5 V 15 6V 7.5 V 10 V 10 60 5V 40 5 4.5 V 20 0 0 0 0 1 2 3 4 5 0 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 100 80 80 60 60 I D [A] g fs [S] 100 40 40 20 20 25 °C 175 °C 0 0 0 2 4 6 8 V GS [V] Rev. 2.3 0 40 80 120 I D [A] page 5 2010-06-23 IPP126N10N3 G IPB123N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=46 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPI126N10N3 G parameter: I D 28 4 26 3.5 24 22 3 20 460 µA 2.5 16 V GS(th) [V] R DS(on) [mΩ] 18 98 % 14 typ 12 46 µA 2 1.5 10 8 1 6 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 Coss 175 °C, 98% 102 25 °C I F [A] C [pF] 175 °C 102 25 °C, 98% 101 Crss 101 100 0 20 40 60 80 V DS [V] Rev. 2.3 0 0.5 1 1.5 2 V SD [V] page 6 2010-06-23 IPP126N10N3 G IPB123N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=46 A pulsed parameter: T j(start) parameter: V DD 100 IPI126N10N3 G 10 8 80 V 50 V 6 10 20 V V GS [V] I AS [A] 25 °C 100 °C 150 °C 4 2 1 0 0.1 1 10 100 1000 0 10 t AV [µs] 20 30 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg V BR(DSS) [V] 105 100 V g s(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.3 page 7 2010-06-23 IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G PG-TO-220 Rev. 2.3 page 8 2010-06-23 IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G PG-TO-262 Rev. 2.3 page 9 2010-06-23 IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G PG-TO-263-3 (D2-Pak) Rev. 2.3 page 10 2010-06-23 IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 11 2010-06-23