MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 mVRMS (over 100 Hz to 100 kHz, with a 10 nF bypass capacitor), the MC33263 represents the ideal choice for sensitive circuits, especially in portable applications where noise performance and space are premium. The MC33263 also excels in response time and reacts in less than 25 ms when receiving an OFF to ON signal (with no bypass capacitor). Thanks to a novel concept, the MC33263 accepts output capacitors without any restrictions regarding their Equivalent Series Resistance (ESR) thus offering an obvious versatility for immediate implementation. With a typical DC ripple rejection better than –90 dB (–70 dB @ 1 kHz), it naturally shields the downstream electronics against choppy power lines. Additionally, thermal shutdown and short–circuit protection provide the final product with a high degree of ruggedness. http://onsemi.com MARKING DIAGRAMS 6 SOT–23L NW SUFFIX CASE 318J 6 1 xAYLW 1 x = Voltage Option Code A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week Features: PIN CONNECTIONS • Very Low Quiescent Current 170 µA (ON, no load), 100 nA (OFF, no load) • Very Low Dropout Voltage, typical value is 137 mV at an output current of 100 mA typically 25 µVrms over 100 Hz to 100 kHz Internal Thermal Shutdown Extremely Tight Line Regulation typically –90 dB Ripple Rejection –70 dB @ 1 kHz Line Transient Response: 1 mV for DVin = 3 V Extremely Tight Load Regulation, typically 20 mV at DIout = 150 mA Multiple Output Voltages Available Logic Level ON/OFF Control (TTL–CMOS Compatible) ESR can vary from 0 to 3W Functionally and Pin Compatible with TK112xxA/B Series Applications: • All Portable Systems, Battery Powered Systems, Cellular Telephones, Radio Control Systems, Toys and Low Voltage Systems MC33263 Block Diagram 6 Input Shutdown 1 ON/OFF 3 Bypass 2 Band Gap Reference * Current Limit * Antisaturation * Protection Thermal Shutdown 4 Output 5 GND Semiconductor Components Industries, LLC, 2000 April, 2000 – Rev. 2 6 VIN GND 2 • Very Low Noise with external bypass capacitor (10 nF), • • • • • • • • • ON/OFF 1 1 5 GND BYPASS 3 4 VOUT (Top View) ORDERING INFORMATION Device Version Shipping MC33263NW–28R2 2.8 V 2500 Tape & Reel MC33263NW–30R2 3.0 V 2500 Tape & Reel MC33263NW–32R2 3.2 V 2500 Tape & Reel MC33263NW–33R2 3.3 V 2500 Tape & Reel MC33263NW–38R2 3.8 V 2500 Tape & Reel MC33263NW–40R2 4.0 V 2500 Tape & Reel MC33263NW–47R2 4.75 V 2500 Tape & Reel MC33263NW–50R2 5.0 V 2500 Tape & Reel All Devices Available in SOT–23L 6 Lead Package GND Publication Order Number: MC33263/D MC33263 DEVICE MARKING ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ XALYW Marking Version 1st Digit A 2.8 V B 3.0 V C 3.2 V D 3.3 V E 3.8 V F 4.0 V G 4.75 V H 5.0 V 2nd Digit A Location Code 3rd Digit L Wafer Lot Traceability 4th/5th Digits YW Date Code 6 5 Pin 1 Ink Mark Identifier or Solid Pin 1 Dot or Dimple 4 XALYW 1 2 3 SOT–23L ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ MAXIMUM RATINGS Rating Symbol Pin # Value Unit Vin 6 12 V Internally Limited 210 W Power Supply Voltage Power Dissipation and Thermal Resistance Maximum Power Dissipation NW Suffix, Plastic Package Thermal Resistance, Junction–to–Air Thermal Resistance, Junction–to–Case PD RqJA RqJC Operating Ambient Temperature Maximum Junction Temperature TA TJmax Tstg Storage Temperature Range °C/W °C/W –40 to +85 150 °C °C –60 to +150 °C ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA = –40°C to +85°C, Max TJ = 150°C) Symbol Characteristics Pin # Min Typ Max Unit ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ CONTROL ELECTRICAL CHARACTERISTICS Input Voltage Range VON/OFF 1 ON/OFF Input Current (All versions) VON/OFF = 2.4 V ION/OFF 1 ON/OFF Input Voltages (All versions) Logic “0”, i.e. OFF State Logic “1”, i.e. ON State VON/OFF 0 – Vin – 2.5 – – 2.2 – – 0.3 – – 0.1 2.0 – 170 200 – 900 1400 175 210 – V mA 1 V CURRENTS PARAMETERS Current Consumption in OFF State (All versions) OFF Mode Current: Vin = Vout + 1.0 V, Iout = 0 mA IQOFF Current Consumption in ON State (All versions) ON Mode Sat Current: Vin = Vout + 1.0 V, Iout = 0 mA IQON Current Consumption in Saturation ON State (All versions) ON Mode Sat Current: Vin = Vout – 0.5 V, Iout = 0 mA IQSAT Current Limit Vin = Vout + 1.0 V, (All versions) Output Short–circuited (Note 1.) IMAX mA mA mA mA 1. Iout (Output Current) is the measured current when the output voltage drops below 0.3 V with respect to Vout at Iout = 30 mA. http://onsemi.com 2 MC33263 ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA = –40°C to +85°C, Max TJ = 150°C) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ Symbol Pin # Vin = Vout + 1.0 V, TA = 25°C, 1.0 mA < Iout < 150 mA 2.8 Suffix 3.0 Suffix 3.2 Suffix 3.3 Suffix 3.8 Suffix 4.0 Suffix 4.75 Suffix 5.0 Suffix Vout 4 Vin = Vout + 1.0 V, –40°C < TA < 80°C, 1.0 mA < Iout < 150 mA 2.8 Suffix 3.0 Suffix 3.2 Suffix 3.3 Suffix 3.8 Suffix 4.0 Suffix 4.75 Suffix 5.0 Suffix Vout Characteristics Min Typ Max 2.74 2.94 3.13 3.23 3.72 3.92 4.66 4.90 2.8 3.0 3.2 3.3 3.8 4.0 4.75 5.0 2.86 3.06 3.27 3.37 3.88 4.08 4.85 5.1 Unit V 4 V 2.7 2.9 3.09 3.18 3.67 3.86 4.58 4.83 2.8 3.0 3.2 3.3 3.8 4.0 4.75 5.0 2.9 3.1 3.31 3.42 3.93 4.14 4.92 5.17 – 2.0 10 – – – 8.0 15 20 25 35 45 – – – 30 137 180 90 230 260 60 70 – – 1.0 – ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ Á ÁÁÁ ÁÁ Á ÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ LINE AND LOAD REGULATION, DROPOUT VOLTAGES Line Regulation (All versions) Vout + 1.0 V < Vin < 12 V, Iout = 60 mA Regline Load Regulation (All versions) Regload Vin = Vout + 1.0 V Iout = 1.0 to 60 mA Iout = 1.0 to 100 mA Iout = 1.0 to 150 mA Dropout Voltage (All versions) Vin – Vout 4/6 mV 1 mV 4, 6 Iout = 10 mA Iout = 100 mA Iout = 150 mA mV DYNAMIC PARAMETERS Ripple Rejection (All versions) Vin = Vout + 1.0 V, Vpp = 1.0 V, f = 1.0 kHz, Iout = 60 mA 4, 6 Line Transient Response Vin = Vout + 1.0 V to Vout + 4.0 V, Iout = 60 mA, d(Vin)/dt = 15 mV/ms 4, 6 Output Noise Voltage (All versions) Cout = 1.0 µF, Iout = 60 mA, f = 100 Hz to 100 kHz Cbypass = 10 nF Cbypass = 1.0 nF Cbypass = 0 nF VRMS Output Noise Density VN tr mV µVrms 4, 6 – – – 25 40 65 – – – – 230 – – – 40 1.1 – – µs ms – 150 – °C nV/ √Hz 4 Cout = 1.0 µF, Iout = 60 mA, f = 1.0 kHz Output Rise Time (All versions) Cout = 1.0 µF, Iout = 30 mA, VON/OFF = 0 to 2.4 V 1% of ON/OFF Signal to 99% of Nominal Output Voltage Without Bypass Capacitor With Cbypass = 10 nF dB 4 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁ THERMAL SHUTDOWN Thermal Shutdown (All versions) http://onsemi.com 3 MC33263 DEFINITIONS This feature is provided to prevent catastrophic failures from accidental overheating. Maximum Package Power Dissipation – The maximum package power dissipation is the power dissipation level at which the junction temperature reaches its maximum value i.e. 125°C. The junction temperature is rising while the difference between the input power (VCC X ICC) and the output power (Vout X Iout) is increasing. Depending on ambient temperature, it is possible to calculate the maximum power dissipation, maximum load current or maximum input voltage (see Application Hints: Protection). The maximum power dissipation supported by the device is a lot increased when using appropriate application design. Mounting pad configuration on the PCB, the board material and also the ambient temperature are affected the rate of temperature rise. It means that when the IC has good thermal conductivity through PCB, the junction temperature will be “low” even if the power dissipation is great. The thermal resistance of the whole circuit can be evaluated by deliberately activating the thermal shutdown of the circuit (by increasing the output current or raising the input voltage for example). Then you can calculate the power dissipation by subtracting the output power from the input power. All variables are then well known: power dissipation, thermal shutdown temperature (150°C for MC33263) and ambient temperature. Load Regulation – The change in output voltage for a change in load current at constant chip temperature. Dropout Voltage – The input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 100 mV below its nominal value (which is measured at 1.0 V differential), dropout voltage is affected by junction temperature, load current and minimum input supply requirements. Output Noise Voltage – The RMS AC voltage at the output with a constant load and no input ripple, measured over a specified frequency range. Maximum Power Dissipation – The maximum total dissipation for which the regulator will operate within specifications. Quiescent Current – Current which is used to operate the regulator chip and is not delivered to the load. Line Regulation – The change in input voltage for a change in the input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected. Line Transient Response – Typical over– and undershoot response when input voltage is excited with a given slope. Thermal Protection – Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated, typically 150°C, the regulator turns off. APPLICATION HINTS The bypass capacitor impacts the start–up phase of the MC33263 as depicted by the data–sheet curves. A typical 1 ms settling time is achieved with a 10 nF bypass capacitor. However, thanks to its low–noise architecture, the MC33263 can operate without bypass and thus offers a typical 20 ms start–up phase. In that case, the typical output noise stays lower than 65 mVRMS between 100 Hz – 100 kHz. Protections – The MC33263 hosts several protections, conferring natural ruggedness and reliability to the products implementing the component. The output current is internally limited to a minimum of 175 mA while temperature shutdown occurs if the die heats up beyond 150°C. These value lets you assess the maximum differential voltage the device can sustain at a given output current before its protections come into play. The maximum dissipation the package can handle is given by: Input Decoupling – As with any regulator, it is necessary to reduce the dynamic impedance of the supply rail that feeds the component. A 1 mF capacitor either ceramic or tantalum is recommended and should be connected close to the MC33263 package. Higher values will correspondingly improve the overall line transient response. Output Decoupling – Thanks to a novel concept, the MC33263 is a stable component and does not require any Equivalent Series Resistance (ESR) neither a minimum output current. Capacitors exhibiting ESRs ranging from a few mW up to 3W can thus safely be used. The minimum decoupling value is 1 mF and can be augmented to fulfill stringent load transient requirements. The regulator accepts ceramic chip capacitors as well as tantalum devices. Noise Performances – Unlike other LDOs, the MC33263 is a true low–noise regulator. With a 10 nF bypass capacitor, it typically reaches the incredible level of 25 mVRMS overall noise between 100 Hz and 100 kHz. To give maximum insight on noise specifications, ON Semiconductor includes spectral density graphics as well as noise dependency versus bypass capacitor. P max http://onsemi.com 4 – T A + TJmax R qJA MC33263 If TJmax is internally limited to 150°C, then the MC33263 can dissipate up to 595 mW @ 25°C. The power dissipated by the MC33263 can be calculated from the following formula: Ptot + ǀ Vin @ Ignd(Iout)ǁ ) ǀVin * Vout ǁ @ Iout or Vin max + PtotI ) V)outI @ Iout out gnd If a 150 mA output current is needed, the ground current is extracted from the data–sheet curves: 6.5 mA @ 150 mA. For a MC33263NW28R2 (2.8 V), the maximum input voltage will then be 6.48 V, a rather comfortable margin. Typical Application – The following figure portraits the typical application for the MC33263 where both input/output decoupling capacitors appear. Input Figure 2. Printed Circuit Board Differential (Vin–Vout) Output 6 C3 1.0 mF 5 4 C2 1.0 mF MC33263 Input 1 On/Off 2 C3 + MC33263 + 3 C2 Output C1 C1 10 nF Rpull–up Figure 1. A Typical MC33263 Application with Recommended Capacitor Values ON/OFF As for any low noise designs, particular care has to be taken when tackling Printed Circuit Board (PCB) layout. The following figure gives an example of a layout where stray inductances/capacitances are minimized. Figure 3. Copper Side Component Layout This layout is the basis for an MC33263 performance evaluation board where the BNC connectors give the user an easy and quick evaluation mean. http://onsemi.com 5 MC33263 MC33263 Wake–up Improvement – In portable applications, an immediate response to an enable signal is vital. If noise is not of concern, the MC33263 without a bypass capacitor settles in nearly 20 ms and typically delivers 65 mVRMS between 100 Hz and 100 kHz. In ultra low–noise systems, the designer needs a 10 nF bypass capacitor to decrease the noise down to 25 mVRMS between 100 Hz and 100 kHz. With the adjunction of the 10 nF capacitor, the wake–up time expands up to 1 ms as shown on the data–sheet curves. If an immediate response is wanted, following figure’s circuit gives a solution to charge the bypass capacitor with the enable signal without degrading the noise response of the MC33263. At power–on, C4 is discharged. When the control logic sends its wake–up signal by going to a high level, the PNP base is momentarily tight to ground. The PNP switch closes and immediately charges the bypass capacitor C1 toward its operating value. After a few ms, the PNP opens and becomes totally transparent to the regulator. This circuit improves the response time of the regulator which drops from 1 ms down to 30 ms. The value of C4 needs to be tweaked in order to avoid any bypass capacitor overload during the wake–up transient. Input Output 6 5 4 + + C3 1.0 mF C2 1.0 mF MC33263 1 2 3 On/Off R2 220 k C4 470 pF MMBT2902LT1 Q1 C1 10 nF Figure 4. A PNP Transistor Drives the Bypass Pin when Enable Goes High MC33263 Without Wake–up Improvement (Typical Response) 1 ms MC33263 With Wake–up Improvement (Typical Response) 30 ms Figure 5. MC33263 Wake–up Improvement with Small PNP Transistor http://onsemi.com 6 MC33263 area which reaches a typical noise level of 26 mVRMS (100 Hz to 100 kHz) at Iout = 60 mA. The PNP being wired upon the bypass pin, it shall not degrade the noise response of the MC33263. Figure 6 confirms the good behavior of the integrated circuit in this 350 Vin = 3.8 V Vout = 2.8 V Co = 1.0 mF Iout = 60 mA Tamb = 25°C 300 nV/sqrt (Hz) 250 200 Cbyp = 10 nF 150 100 50 Vin = 26 mVrms C = 10 nF @ 100 Hz – 100 kHz 0 100 1,000 10,000 100,000 1,000,000 Frequency (Hz) Figure 6. Noise Density of the MC33263 with a 10 nF Bypass Capacitor and a Wake–up Improvement Network http://onsemi.com 7 MC33263 TYPICAL PERFORMANCE CHARACTERISTICS Ground Current Performances 7.0 2.1 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Tamb = 25°C 5.0 2.05 GROUND CURRENT (mA) GROUND CURRENT (mA) 6.0 4.0 3.0 2.0 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA 2.0 1.95 1.9 1.85 1.0 0 0 20 60 40 80 120 100 140 160 180 200 1.8 –40 –20 0 20 40 60 80 OUTPUT CURRENT (mA) AMBIENT TEMPERATURE (°C) Figure 7. Ground Current versus Output Current Figure 8. Ground Current versus Ambient Temperature Line Transient Response and Output Voltage QUIESCENT CURRENT ON MODE ( mA) 200 190 Y1 180 170 160 Vin = 3.8 to 7.0 V Y1 = 1.0 mV/div Y2 = 1.0 V/div X = 1.0 ms Iout = 60 mA Tamb = 25°C 150 140 130 120 110 100 –40 –20 0 20 40 60 80 dVin = 3.2 V 100 TEMPERATURE (°C) Figure 9. Quiescent Current versus Temperature Figure 10. Line Transient Response http://onsemi.com 8 Y2 MC33263 TYPICAL PERFORMANCE CHARACTERISTICS Load Transient Response versus Load Current Slope Y1 Y2 Vin = 3.8 V Y1 = 100 mV/div Y2 = 20 mV/div X = 200 ms/div Tamb = 25°C Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 20 ms Tamb = 25°C Y1 Y2 Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Figure 11. Iout = 3.0 mA to 150 mA Figure 12. ISlope = 100 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA Y1 Y1 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 100 ms Tamb = 25°C Y2 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 200 ms Tamb = 25°C Y2 Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Figure 13. ISlope = 6.0 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA Figure 14. ISlope = 2.0 mA/ms (Large Scale) Iout = 3.0 mA to 150 mA http://onsemi.com 9 MC33263 TYPICAL PERFORMANCE CHARACTERISTICS Noise Performances 350 70 250 3.3 nF 60 RMS NOISE (mV) 0 nF 300 nV/Hz Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 23°C 200 Cbyp = 10 nF 150 100 Vn = 65 mVrms @ C bypass = 0 Vn = 30 mVrms @ Cbypass = 3.3 nF 50 Vn = 25 mVrms @ C bypass = 10 nF over 100 Hz to 100 kHz 0 100 1000 10,000 50 40 30 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C 20 10 0 100,000 1,000,000 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 FREQUENCY (Hz) BYPASS CAPACITOR (nF) Figure 15. Noise Density versus Bypass Capacitor Figure 16. RMS Noise versus Bypass Capacitor (100 Hz – 100 kHz) Settling Time Performances 1200 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C SETTLING TIME ( m S) 1000 800 600 200 ms/div 500 mV/div Cbyp = 10 nF 400 Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C 200 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 BYPASS CAPACITOR (nF) Figure 17. Output Voltage Settling Time versus Bypass Capacitor 100 ms/div 500 mV/div Cbyp = 3.3 nF Figure 18. Output Voltage Settling Shape Cbypass = 10 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C 10 ms/div 500 mV/div Cbyp = 0 nF Figure 19. Output Voltage Settling Shape Cbypass = 3.3 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 mF Iout = 50 mA Tamb = 25°C Figure 20. Output Voltage Settling Shape without Bypass Capacitor http://onsemi.com 10 MC33263 TYPICAL PERFORMANCE CHARACTERISTICS Dropout Voltage 250 250 85°C 10 mA 200 25°C DROPOUT (mV) DROPOUT (mV) 200 –40°C 150 100 50 60 mA 150 100 mA 100 50 0 10 100 60 150 mA 0 –40 150 –20 0 20 40 60 80 100 IO (mA) TEMPERATURE (°C) Figure 21. Dropout Voltage versus Iout Figure 22. Dropout Voltage versus Temperature Output Voltage 2.860 2.805 1 mA 2.840 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 2.800 2.795 60 mA 2.790 100 mA 2.785 150 mA 2.780 2.820 2.800 25°C –40°C 2.780 85°C 2.760 2.775 2.770 –40 2.740 –20 0 20 40 60 80 0 100 20 40 60 80 100 120 140 TEMPERATURE (°C) OUTPUT CURRENT (mA) Figure 23. Output Voltage versus Temperature Figure 24. Output Voltage versus Iout 160 Ripple Rejection Performances 0 0 –10 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C –20 –30 –40 (dB) (dB) –40 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Iout = 60 mA Tamb = 25°C –20 –50 –60 –60 –80 –70 –80 –100 –90 –100 –120 100 1000 10,000 100,000 10 100 1000 10,000 100,000 1,000,000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 25. Ripple Rejection versus Frequency with 10 nF Bypass Capacitor Figure 26. Ripple Rejection versus Frequency without Bypass Capacitor http://onsemi.com 11 MC33263 PACKAGE DIMENSIONS SOT–23L NW SUFFIX CASE 318J–01 ISSUE B 0.05 E E1 A S B S C A 6 5 4 M A C M 0.10 3 C B b 2 A M e1 D 1 ÇÇ ÇÇ ÇÇ 0.20 e PIN 1 IDENTIFIER IN THIS ZONE A1 A B ÉÉÉ ÇÇÇ ÉÉÉ (b) q c1 H c b1 L SECTION A–A NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.23 PER SIDE. 4. DIMENSIONS b AND b2 DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF THE b AND b2 DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSIONS D AND E1 ARE TO BE DETERMINED AT DATUM PLANE H. DIM A A1 b b1 c c1 D E E1 e e1 L q MILLIMETERS MIN MAX 1.25 1.40 0.00 0.10 0.35 0.50 0.35 0.45 0.10 0.25 0.10 0.20 3.20 3.60 3.00 3.60 2.00 2.40 0.95 1.90 0.55 0.25 0_ 10_ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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