PHILIPS BUT12XI Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially
suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
VBE = 0 V
ICsat
tf
Collector saturation current
Inductive fall time
PINNING - SOT186A
PIN
TYP.
MAX.
UNIT
Ths ≤ 25 ˚C
IC = 5.0 A;IB = 0.86 A
-
1000
450
8
20
33
1.5
V
V
A
A
W
V
ICon = 5.0A;IBon = 1.0A,Tj ≤100˚C
5
-
300
A
ns
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
case
1
base
2
collector
3
emitter
b
case isolated
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1000
450
8
20
4
6
33
150
150
V
V
A
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
3.65
K/W
55
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
June 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
3.0
mA
mA
450
-
10
-
mA
V
10
14
18
20
1.5
1.3
35
35
V
V
5.8
10
12.5
TYP.
MAX.
UNIT
-
1.0
4.0
0.8
µs
µs
µs
1.9
150
2.5
300
µs
ns
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
ICES
ICES
IEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE
PARAMETER
Collector cut-off current
CONDITIONS
1
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
Emitter cut-off current
VEB = 9 V; IC = 0 A
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
Collector-emitter saturation voltages IC = 5 A; IB = 0.86 A
Base-emitter saturation voltage
IC = 5 A; IB = 0.86 A
DC current gain
IC = 10 mA; VCE = 5 V
IC = 1 A; VCE = 5 V
IC = 5 A; VCE = 1.5 V
hFEsat
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ton
ts
tf
Switching times (resistive load)
Turn-on time
Turn-off storage time
Turn-off fall time
ICon = 5.0 A; IBon = -IBoff = 1.0 A
Switching times (inductive load)
ICon = 5.0 A; IBon = 1.0 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
ts
tf
Turn-off storage time
Turn-off fall time
1 Measured with half sine-wave voltage (curve tracer).
June 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
ICon
90 %
+ 50v
100-200R
90 %
IC
10 %
ts
Horizontal
ton
tf
toff
Oscilloscope
IBon
IB
Vertical
10 %
300R
1R
tr
30ns
6V
30-60 Hz
-IBoff
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms with resistive load.
VCC
IC / mA
LC
250
200
IBon
LB
100
T.U.T.
-VBB
0
min
VCE / V
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V;LB = 1 uH
VCC
ICon
90 %
IC
RL
VIM
10 %
RB
0
T.U.T.
ts
toff
tp
IB
tf
t
IBon
T
t
-IBoff
Fig.6. Switching times waveforms with inductive load.
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
June 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
VCEsat / V
VCC
1
0.9
IC/IB=
12
10
8
0.8
0.7
LC
0.6
5
0.5
0.4
VCL
IBend
LB
0.2
CFB
T.U.T.
-VBB
0.1
0
Fig.7. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V
LC = 200 µH; VCL ≤ 850 V; LB = 1 µH
120
Tj = 25 C
Tj = 125 C
0.3
1
IC / A
10
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f(IC); parameter IC/IB
VBEsat / V
Normalised Power Derating
PD%
0.1
1.2
110
100
90
1.1
80
1
Tj = 25 C
Tj = 125 C
70
60
50
0.9
40
0.8
IC =
6A
3A
2A
30
0.7
20
10
0.6
0
0
20
40
60
80
100
Tmb / C
120
0
140
0.4
0.8
1.2
IB / A
1.6
2
2.4
Fig.11. Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
Fig.8. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
VCEsat / V
VBEsat / V
1.2
10
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
1.1
1
0.9
6A
0.8
1
0.7
0.6
0.5
0.4
4A
IC/IB=
8
10
12
0.1
1
IC / A
IC=2A
0.1
10
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f(IC); parameter IC/IB
June 1997
0.1
1
IB / A
10
Fig.12. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
h FE
IC / A
100
100
5V
ICMmax
1V
10
10
ICmax
Tj = 25 C
Tj = 125 C
II
1
0.01
1
0.1
10
1
IC / A
Fig.14. Typical DC current gain. hFE = f(IC)
parameter VCE
I
0.1
IC / A
8
7
DC
6
5
0.01
4
1
10
100
1000
3
VCE / V
2
Fig.13. Forward bias safe operating area. Tmb = 25˚C
I
II
NB:
1E+01
1
Region of permissible DC operation.
Extension for repetitive pulse operation.
Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
0
0
200
400
600
800
1000
VCE / V
Fig.15. Reverse bias safe operating area. Tj ≤ Tj max
BUX100
Zth / (K/W)
1.0
0.5
1E+00
0.2
0.1
0.05
1E-01
PD
0.02
D =
1E-05
1E-03
t / s
tp
T
t
T
D=0
1E-02
tp
1E-01
1E+01
Fig.16. Transient thermal impedance. Zth j-mb = f(t); parameter D= tp/T
June 1997
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 1997
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
June 1997
7
Rev 1.000
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