CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-100 is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O. MARKING CODE: CSH110 FEATURES: HD DIP CASE • Low Leakage Current (40nA TYP @ VRRM) • Low Forward Voltage Drop Schottky Diodes • High 1.0A Current Rating MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse Voltage VRRM DC Blocking Voltage VR 100 100 V RMS Reverse Voltage Average Forward Current Peak Forward Surge Current Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance UNITS V VR(RMS) IO 71 V 1.0 A IFSM PD 20 A 1.2 W -50 to +125 °C -55 to +150 °C 85 °C/W TJ Tstg ΘJA ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=100V 0.04 10 IR IR BVR VF VF CJ VR=100V, TA=50°C VR=100V, TA=100°C IR=150μA UNITS μA 1.0 mA 20 mA 100 V IF=500mA IF=1.0A 615 700 mV 690 750 mV VR=4.0V, f=1.0MHz 230 pF R6 (22-May 2012) CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH110 R6 (22-May 2012) w w w. c e n t r a l s e m i . c o m CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER TYPICAL ELECTRICAL CHARACTERISTICS R6 (22-May 2012) w w w. c e n t r a l s e m i . c o m