Bias Resistor Transistor MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RL34 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. ∗ Simplifies Circuit Design ∗ Reduces Board Space ∗ Reduces Component Count ∗ The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ∗ Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. NPN SILICON BIAS RESISTOR TRANSISTOR Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. PIN1 base (Input) R1 PIN3 Collector (output) 3 R2 1 PIN2 Emitter (Ground) 2 CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ T A = 25°C (1) Derate above 25°C Symbol VCBO V CEO IC PD Value 50 50 100 200 1.6 Unit Vdc Vdc mAdc mW mW/°C Symbol R θJA TJ , Tstg Value 625 –65 to +150 260 10 Unit °C/W °C °C Sec THERMAL CHARACTERISTICS Rating Thermal Resistance — Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes Time in Solder Bath TL DEVICE MARKING AND RESISTOR VALUES MMUN2211RLT1 Marking R1 (K) R2 (K) A8A 10 10 MMUN2212RLT1 A8B 22 MMUN2213RLT1 A8C 47 MMUN2214RLT1 A8D 10 MMUN2215RLT1 (2) A8E 10 MMUN2216RLT1 (2) A8F 4.7 MMUN2230RLT1 (2) A8G 1 MMUN2231RLT1 (2) A8H 2.2 MMUN2232RLT1 (2) A8J 4.7 MMUN2233RLT1 (2) A8K 4.7 MMUN2234RLT1 (2) A8L 22 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. 22 47 47 8 8 Device 1 2.2 4.7 47 47 Q2–1/8 MMUN2211RLT1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit I CBO I CEO I EBO 50 50 - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 - nAdc nAdc mAdc 35 60 80 80 160 160 3.0 8.0 15 80 80 - 60 100 140 140 350 350 5.0 15 30 200 150 - 0.25 4.9 - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB=50V, I E = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current MMUN2211RLT1 (VEB = 6.0 V, IC = 0) MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 Collector-Base Breakdown Voltage (IC=10mA, IE=0) Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0) ON CHARACTERISTICS V(BR)CBO V(BR)CEO Vdc Vdc (3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA) (IC = 10 mA, IB = 5 mA) MMUN2230RLT1 MMUN2231RLT1 (IC = 10 mA, IB = 1 mA) MMUN2215RLT1 MMUN2216RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 Output Voltage (on) (VCC=5.0V,VB=2.5V, RL=1.0kΩ) MMUN2211RLT1 MMUN2212RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 (VCC =5.0V,VB=3.5V, RL= 1.0kΩ) MMUN2213RLT1 Output Voltage(off)(VCC=5.0V,VB=0.5V, RL=1.0kΩ) (VCC=5.0V,VB=0.050V, RL=1.0kΩ) MMUN2230RLT1 (VCC=5.0V,VB=0.25V, RL=1.0kΩ) MMUN2215RLT1 MMUN2216RLT1 MMUN2233RLT1 hFE VCE(sat) VOL VOH Vdc Vdc Vdc 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Q2–2/8 MMUN2211RLT1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS Input Resistor Symbol Min Typ Max Unit 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 — 0.8 0.055 0.38 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 — 1.0 0.1 0.47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 — 1.2 0.185 0.56 kΩ (3) MMUN2211RLT1 R1 MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 Resistor Ratio MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 R1/R2 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. Q2–3/8 MMUN2211RLT1 SERIES V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) P D , POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211RLT1 250 200 150 100 R 50 θJA = 625°C/W 0 –50 0 50 10 1 I C /I B =10 T A = –25°C 25°C 75°C 0.1 0.01 0.001 150 0 20 1000 80 4 V CE = 10 V f = 1 MHz T A =75°C 25°C –25°C 100 10 l E= 0 V T A = 25°C 3 2 1 0 1 10 100 0 100 20 30 40 50 10 25°C V in , INPUT VOLTAGE (VOLTS) 75°C T A = –25°C 10 10 V R , REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain I C , COLLECTOR CURRENT (mA) 60 I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C C ob , CAPACITANCE (pF) h FE , DC CURRENT GAIN (NORMALIZED) AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve 40 1 0.1 0.01 V O= 5 V 0.001 V O = 0.2 V T A = –25°C 25°C 75°C 1 0.1 0 1 2 3 4 5 6 7 V in , INPUT VOLTAGE (VOLTS) Figure 5. V CE(sat) versus I C 8 9 10 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. V CE(sta) versus I C Q2–4/8 MMUN2211RLT1 SERIES h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212RLT1 1 I C /I B =10 T A = –25°C 25°C 75°C 0.1 0.01 0.001 0 20 40 60 V = 10 V 25°C –25°C 100 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain 100 3 I C , COLLECTOR CURRENT (mA) f = 1 MHz l E= 0 V T A = 25°C 2 1 0 10 20 30 40 75°C 25°C T A = –25°C 10 1 0.1 0.01 V O= 5 V 0.001 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) 0 CE T A =75°C 80 4 C ob , CAPACITANCE (pF) 1000 V O = 0.2 V T A = –25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current Q2–5/8 MMUN2211RLT1 SERIES 10 h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213RLT1 T A = –25°C I C /I B =10 25°C 75°C 1 0.1 0.01 0 20 40 60 V CE = 10 V T A =75°C 25°C –25°C 100 10 80 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain 1 100 0.8 I C , COLLECTOR CURRENT (mA) f = 1 MHz l E= 0 V T A = 25°C 0.6 0.4 0.2 0 25°C 75°C T A = –25°C 10 1 0.1 0.01 V O= 5 V 0.001 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 1000 V O= 2 V T A=–25°C 25°C 75°C 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current Q2–6/8 MMUN2211RLT1 SERIES h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214RLT1 1 T A = –25°C I C /I B =10 25°C 0.1 75°C 0.01 0.001 0 20 40 60 80 V CE T A =75°C = 10V 250 25°C 200 –25°C 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C Figure 18. DC Current Gain 80 90 100 100 3.5 f = 1 MHz l E= 0 V 3 T A= 25°C I C , COLLECTOR CURRENT (mA) 4 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 75°C 25°C T A = –25°C 10 V O= 5 V 1 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 300 T A = –25°C V O = 0.2 V 25°C 75°C 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current Q2–7/8 MMUN2211RLT1 SERIES TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHERLOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V V CC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source Q2–8/8