MAKO SEMICONDUCTOR CO.,LIMITED SOT-23 Plastic-Encapsulate Transistors MA MMBT2222A TRANSISTOR (NPN) SOT-23 KO FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR SE MARKING: 1P /W1P MI MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Value 75 40 6 600 300 417 150 -55~+150 TO UC ND CO Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg Unit V V V mA mW ℃/W ℃ ℃ R ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol V(BR)CBO * IC= 10μA, IE=0 IC= 10mA, IB=0 V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 Collector cut-off current ICEX VCE=30V,VBE(off)=3V Emitter cut-off current IEBO hFE(3) * VCE(sat) * Base-emitter saturation voltage VBE(sat) * fT Delay time td Rise time tr Storage time tS Fall time tf 40 V 6 V 100 VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 500mA 42 0.01 μA 0.01 μA 0.1 μA 300 1 0.3 2.0 1.2 300 V D Collector-emitter saturation voltage Transition frequency V VCE=10V, IC= 150mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz Unit E IT hFE(2) DC current gain Max 75 VEB= 3V, IC=0 * Typ M LI Collector-emitter breakdown voltage hFE(1) Min ., CO Collector-base breakdown voltage Test conditions V MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 ns 25 ns VCC=30V, IC=150mA IB1=-IB2=15mA 225 ns 60 ns *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. MAKO SEMICONDUCTOR CO.,LIMITED B,Nov,2011 MMBT2222A Typical Characterisitics 500 0.9mA (A) 0.20 400 0.8mA hFE IC 0.7mA DC CURRENT GAIN 0.6mA 0.15 0.5mA MA COLLECTOR CURRENT COMMON EMITTER VCE=10V 1mA COMMON EMITTER Ta=25℃ 0.10 0.4mA 0.3mA KO 0.05 2 4 6 8 10 Ta=25℃ —— VCE 10 IC VBEsat 1.2 Ta=100℃ 0.1 Ta=25℃ 0.0 IC —— IC Ta=100℃ 0.4 β=10 0.0 1 10 100 COLLECTOR CURRENT (mA) —— VBE 1 10 100 COLLECTOR CURRENT R IC IC 600 100 600 Cob/ Cib IC —— VCB/ VEB f=1MHz IE=0/ IC=0 (pF) IC (mA) ., CO Ta=25℃ 1 0.4 0.6 0.8 1 0.1 1.0 1 BASE-EMMITER VOLTAGE VBE (V) fT 10 REVERSE VOLTAGE —— IC Pc 400 —— V 20 (V) Ta D 500 E IT 0.2 Cob 10 M LI CAPACITANCE C Ta=100℃ 10 0.1 0.0 Ta=25℃ Cib 100 600 (mA) COMMON EMITTER VCE=10V COLLECTOR CURRENT 600 (mA) Ta=25℃ 0.8 TO UC ND 0.2 100 COLLECTOR CURRENT CO 0.3 1 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0.4 0 0.1 12 MI COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) SE VCEsat β=10 200 IB=0.1mA COLLECTOR-EMITTER VOLTAGE 0.5 Ta=100℃ 300 100 0.2mA 0.00 0 —— IC hFE Static Characteristic 0.25 COMMON EMITTER VCE=20V f=200MHz TRANSTION FREQUENCY fT COLLECTOR POWER DISSIPATION Pc (mW) (MHz) Ta=25℃ 100 10 300 200 100 0 80 COLLECTOR CURRENT IC (mA) 0 25 50 75 AMBIENT TEMPERATURE MAKO SEMICONDUCTOR CO.,LIMITED 100 Ta 125 (℃) 150 B,Nov,2011