HLDD50P04 P-Channel Enhancement Mode Power MOSFET Description Features The HLDD50P04 uses advanced trench technology □ VDS =-40V,ID =-45A and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application □ □ □ Power switchingapplication Hard switched and high frequencycircuits □ RDS(ON)：1 5mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Uninterruptible powersupply P-Channel MOSFET Marking and pin assignment Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V ID -45 A ID (100℃) -28 A Pulsed Drain Current IDM -180 A Maximum Power Dissipation PD 73.5 W 0.59 W/℃ EAS 130 TJ,TSTG -55 To 150 mJ ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case www.hldic.com RθJC Page 1 1.7 ℃/W 2017. sz192 . V1.0 HLDD50P04 Package Marking and Ordering Information Part NO. Marking Package HLDD50P04 D50P04 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA -40 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA -1.0 -1.6 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A - Off Characteristics On Characteristics (Note 3) Forward Transconductance VGS=4.5V, ID=8A 11.5 16 15 22 gFS VDS=10V,ID=20A - 13 Input Capacitance Clss VDS=-25V, - 2757 4000 PF Output Capacitance Coss VGS=0V, - 240 360 PF Crss F=1.0MHz - 137 200 PF - 23 40 nS Dynamic Characteristics - mΩ S (Note4) Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=20V,ID=-1A, - 10 20 nS td(off) VGS=-10V,RG=6Ω - 135 250 nS - 46 90 nS - 22.2 - 8.2 nC - 8.8 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-32V,ID=10A, VGS=-4.5V 40 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS - Reverse Recovery Time VGS=0V,IS=-1A - -1 V - -45 A trr - - - nS Reverse Recovery Charge Qrr - - - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 se c. 3. Pulse Test: PulseW idth ≤ 300μs, Duty Cycle ≤2% . 4. Guaranteed by design, not subject toproduction 5. EAS condition : VDD=25V,VGS=10V,L=0.1mH,IAS=51A.,RG=25 ,Starting TJ=25℃. www.hldic.com Page 2 2017. sz192 . V1.0 HLDD50P04 N or m al iz e d O n R es is ta n ce ( m Ω ) ID , Continuous Drain Current (A ) 40V P-Channel MOSFETs TC , Case Temperature (℃) Continuous Drain Current vs. TC Fig.2 TJ , Junction Temperature (℃) Qg , Gate Charge (nC) Normalized Vth vs. TJ Fig.4 Square Wave Pulse Duration (s) Fig.5 Gate Charge Waveform -ID , Continuous Drain Current (A ) Normalized Thermal Response (RθJA) Fig.3 Normalized RDSON vs. TJ -VGS , Gate to Source Voltage (V ) Normalized Gate Threshold Voltage (V ) Fig.1 TJ , Junction Temperature (℃) -VDS , Drain to Source Voltage (V) Normalized Transient Impedance www.hldic.com Page 3 Fig.6 Maximum Safe Operation Area 2017. sz192 . V1.0 HLDD50P04 40V P-Channel MOSFETs -VDS 90% 10% -VGS Td(on) Tr Ton Fig.7 Td(off) Tf Toff Switching Time Waveform www.hldic.com Fig.8 Page 4 Gate Charge Waveform 2017. sz192 . V1.0 HLDD50P04 40V P-Channel MOSFETs TO-252 Package Information www.hldic.com Page 5 2017. sz192 . V1.0