ON MMBT2369LT1 Switcing transistor Datasheet

MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
15
Vdc
Collector–Emitter Voltage
VCES
40
Vdc
Collector–Base Voltage
VCBO
40
Vdc
Emitter–Base Voltage
VEBO
4.5
Vdc
IC
200
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
556
°C/W
Collector Current – Continuous
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
3
RJA
1
2
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
–55 to
+150
°C
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT–23
CASE 318
STYLE 6
MARKING DIAGRAMS
M1J X
1JA X
MMBT2369LT1
MMBT2369ALT1
M1J, 1JA = Specific Device Code
X
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1
SOT–23
3000/Tape & Reel
MMBT2369ALT1
SOT–23
3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 3
1
Publication Order Number:
MMBT2369LT1/D
MMBT2369LT1, MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
15
–
–
40
–
–
40
–
–
4.5
–
–
–
–
–
–
0.4
30
–
–
0.4
40
–
40
20
30
20
20
–
–
–
–
–
–
–
120
120
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
0.20
0.30
0.25
0.50
0.7
–
–
–
–
–
–
–
0.85
1.02
1.15
1.60
–
–
4.0
5.0
–
–
–
5.0
13
–
8.0
12
–
10
18
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 10 µAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Vdc
Vdc
Vdc
Vdc
µAdc
ICBO
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
µAdc
ICES
MMBT2369A
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C)
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
hFE
Collector–Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
Base–Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
–
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Small Signal CurrentGain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
pF
hfe
–
SWITCHING CHARACTERISTICS
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
Turn–On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
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2
ns
ns
ns
MMBT2369LT1, MMBT2369ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
t1
+10.6 V
0
-1.5 V
3V
< 1 ns
270 Ω
3.3 k
270 Ω
t1
+10.75 V
0
-9.15 V
Cs* < 4 pF
3.3 k
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
Cs* < 4 pF
*Total shunt capacitance of test jig and connectors.
Figure 1. ton Circuit – 10 mA
t1
+10.8 V
-2 V
10 V
Figure 3. toff Circuit – 10 mA
95 Ω
1k
Cs* < 12 pF
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
95 Ω
10 V
0
-8.6 V
0
< 1 ns
t1
+11.4 V
1k
< 1 ns
Cs* < 12 pF
1N916
PULSE WIDTH (t1) BETWEEN
10 AND 500 µs
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 2. ton Circuit – 100 mA
Figure 4. toff Circuit – 100 mA
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 Ω
RISE TIME = 1 ns
TURN-ON WAVEFORMS
Vin
0
220 Ω
10%
Vout
ton
90%
0.1 µF
Vout
3.3 kΩ
Vin
50 Ω
PULSE GENERATOR
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 Ω
PW ≥ 300 ns
DUTY CYCLE < 2%
3.3 k
0.0023 µF
0.005 µF
0.0023 µF
0.005 µF
0.1 µF
0.1 µF
VBB +-
TURN-OFF WAVEFORMS
0
50 Ω
10%
Vin
90%
Vout
+V =3V
- CC
VBB = +12 V
Vin = -15 V
toff
Figure 5. Turn–On and Turn–Off Time Test Circuit
6
TJ = 25°C
5
100
LIMIT
TYPICAL
50
Cib
SWITCHING TIMES (nsec)
CAPACITANCE (pF)
4
3
Cob
2
1
0.1
0.2
0.5
1.0
2.0
REVERSE BIAS (VOLTS)
5.0
βF = 10
VCC = 10 V
VOB = 2 V
tf
tr
VCC = 10 V
10
5
2
10
tr (VCC = 3 V)
20
ts
1
Figure 6. Junction Capacitance Variations
2
5
10
20
IC, COLLECTOR CURRENT (mA)
td
50
Figure 7. Typical Switching Times
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3
100
MMBT2369LT1, MMBT2369ALT1
500
200
CHARGE (pC)
QT, βF = 10
VCC = 10 V
25°C
100°C
QT, βF = 40
t1
+5 V
100
∆V
0
50
< 1 ns
PULSE WIDTH (t1) = 5 µs
DUTY CYCLE = 2%
QA, VCC = 10 V
QA, VCC = 3 V
20
10
3V
10 pF MAX
2
1
VALUES REFER TO
IC = 10 mA TEST
270
Cs* < 4 pF
4.3 k
Figure 9. QT Test Circuit
5
10
20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 8. Maximum Charge Data
C < COPT
C
C=0
10 V
980
0
-4 V
COPT
500
< 1 ns
Cs* < 3 pF
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
TIME
Figure 10. Turn–Off Waveform
VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS)
t1
+6 V
Figure 11. Storage Time Equivalent Test Circuit
1.0
0.8
TJ = 25°C
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
IB, BASE CURRENT (mA)
2
5
Figure 12. Maximum Collector Saturation Voltage Characteristics
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4
10
20
MMBT2369LT1, MMBT2369ALT1
hFE , MINIMUM DC CURRENT GAIN
200
TJ = 125°C
VCE = 1 V
75°C
25°C
100
TJ = 25°C and 75°C
-15°C
50
-55°C
20
1
2
5
10
IC, COLLECTOR CURRENT (mA)
20
50
100
Figure 13. Minimum Current Gain Characteristics
1.0
βF = 10
TJ = 25°C
1.2
0.5
MAX VBE(sat)
1.0
COEFFICIENT (mV/ °C)
V(sat) , SATURATION VOLTAGE (VOLTS)
1.4
MIN VBE(sat)
0.8
0.6
0.4
0.2
MAX VCE(sat)
1
2
5
10
20
IC, COLLECTOR CURRENT (mA)
0
APPROXIMATE DEVIATION
FROM NOMINAL
-0.5
-1.0
θVC
-55°C to +25°C
±0.15 mV/°C
25°C to 125°C
±0.15 mV/°C
θVB
±0.4 mV/°C
±0.3 mV/°C
-2.5
100
(-55°C to +25°C)
(-55°C to +25°C)
(25°C to 125°C)
-1.5
θVB for VBE(sat)
-2.0
50
(25°C to 125°C)
θVC for VCE(sat)
0
Figure 14. Saturation Voltage Limits
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT (mA)
80
90
Figure 15. Typical Temperature Coefficients
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5
100
MMBT2369LT1, MMBT2369ALT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
The melting temperature of solder is higher than the rated
pad size. This can vary from the minimum pad size for
temperature of the device. When the entire device is heated
soldering to a pad size given for maximum power
to a high temperature, failure to complete soldering within
dissipation. Power dissipation for a surface mount device is
a short time could result in device failure. Therefore, the
determined by TJ(max), the maximum rated junction
following items should always be observed in order to
temperature of the die, RθJA, the thermal resistance from the
minimize the thermal stress to which the devices are
device junction to ambient, and the operating temperature,
subjected.
TA. Using the values provided on the data sheet for the
SOT–23 package, PD can be calculated as follows:
• Always preheat the device.
• The delta temperature between the preheat and soldering
TJ(max) – TA
PD =
should be 100°C or less.*
RθJA
• When preheating and soldering, the temperature of the
The values for the equation are found in the maximum
leads and the case must not exceed the maximum
ratings table on the data sheet. Substituting these values into
temperature ratings as shown on the data sheet. When
the equation for an ambient temperature TA of 25°C, one can
using infrared heating with the reflow soldering method,
calculate the power dissipation of the device which in this
the difference shall be a maximum of 10°C.
case is 225 milliwatts.
• The soldering temperature and time shall not exceed
150°C – 25°C
260°C for more than 10 seconds.
PD =
= 225 milliwatts
556°C/W
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit • After soldering has been completed, the device should be
board to achieve a power dissipation of 225 milliwatts.
allowed to cool naturally for at least three minutes.
There are other alternatives to achieving higher power
Gradual cooling should be used as the use of forced
dissipation from the SOT–23 package. Another alternative
cooling will increase the temperature gradient and result
would be to use a ceramic substrate or an aluminum core
in latent failure due to mechanical stress.
board such as Thermal Clad. Using a board material such • Mechanical stress or shock should not be applied during
as Thermal Clad, an aluminum core board, the power
cooling.
dissipation can be doubled using the same footprint.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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6
MMBT2369LT1, MMBT2369ALT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318-03 AND -07 OBSOLETE, NEW STANDARD
318-08.
A
L
3
1
V
B S
2
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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7
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MMBT2369LT1, MMBT2369ALT1
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
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Phone: 81–3–5740–2700
Email: [email protected]
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For additional information, please contact your local
Sales Representative.
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8
MMBT2369LT1/D
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