Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation at Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA Noise figure at f: 1 kHz VCE = 5 V; IC: 200 mA; B = 200 Hz RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Continental Device India Limited Data Sheet VCES VCE0 IC Ptot Tj max. max. max. max. max. 45 45 200 250 150 V V mA mW °C fT typ. 250 MHz F typ. 2 dB VCES VCE0 VEB0 max. max. max. 45 V 45 V 5 V Page 1 of 3 BCX70G BCX70H BCX70J BCX70K Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature IC lB Ptot Tstg Tj THERMAL RESISTANCE From junction to ambient Rth j–a = CHARACTERISTICS Tamb: 25 °C unless otherwise specified Collector–emitter cut–off current VBE = 0; VCE = 45 V VBE = 0; VCE = 45 V; Tamb = 150 °C Emitter–base cut–off current IC = 0; VEB = 4 V Saturation voltages at IC = 10 mA; IB = 0,25 mA < < 20 nA 20 mA IEB0 < 20 nA hFE hFE hFE Small-signal current gain VCE = 5 V; IC = 2 mA; f = 1 kHz hfe Output admittance VCE = 5 V; IC = 2 mA; f = 1 kHz Base-emitter voltage hoe VCE = 5 V; IC = 2 mA VBE VCE = 5 V; IC = 10 mA VCE = 1 V; IC = 50 mA VBE VBE Data Sheet > > < > fT 0,1 to 0,7 to > typ. Cc typ. 2,5 pF Ce typ. typ. < 8 pF 2 dB 6 dB F BCX70G Continental Device India Limited 500 K/W ICES ICES VCEsat VBEsat Transition frequency at f = 100 MHz D IC = 10 mA; VCE = 5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 10 V Emitter capacitance at f = 1 MHz IC = Ic = 0; VEB = 0,5 V Noise figure at RS = 2 kW , IC = 200 mA; VCE = 5 V; f = 1 kHz; B = 200 Hz VCE = 1 V; IC = 50 mA 200 mA 50 mA 250 mW +150 °C 150 ° C VCEsat 0,05 to 0,35 V VBEsat 0,6 to 0,85 V at IC = 50 mA; IB = 1,25 mA D.C. current gain VCE = 5V; lC = 10mA VCE = 5 V; IC = 2 mA max. max. max. –55 to max. — 120 220 50 0,55 1,05 125 250 70H 70J 70K 40 180 310 70 30 250 460 90 100 380 630 100 V V MHz MHz > 125 175 250 350 < 250 350 500 700 typ. 18 24 30 50 mS 0,55 to 0.75 V typ. 0,65 V typ. typ. 0,52 0,78 V V Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3