CMS-S087-040 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 2.210* 2.210 mm 2 Bond Pad size(B) : 2.083 *2.083 mm 2 Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag Metalization : Cathode Ti/Ni/Ag A B Electrical Characteristics Sym. Spec. Limit Unit Maximum Instantaneous Forward Volt ° at IF : 8.0Amp. 25 C VF max 0.54 Volt Minimum Instantaneous Reverse Voltage ° at IR : 300 uA 25 C VR min. 43 Volt. Minimum Non-repetitive Peak Surge current at 25 C IFSM 150 Amp Storage Temperature TSTG -65 to +125 ° HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan TEL: +886-3-567 9979 FAX: +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2002/04/24 Rev. 1 TEL: FAX: ° C +886-2-8692 1591 +886-2-8692 1596 Champion Microelectronic Corporation Page 1