Diode Semiconductor Korea ERB12-01---ERB12-10 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A PLASTIC SILICON RECTIFIERS FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 DO - 41 MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERB12 -01 ERB12 -02 ERA12 -04 ERB12 -06 ERB12 -10 UNITS Maximum recurrent peak reverse voltage V RRM 100 200 400 600 1000 V Maximum RMS voltage V RMS 70 140 280 420 700 V Maximum DC blocking voltage VDC 100 200 400 600 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.0 A IFSM 60.0 A VF 1.1 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 IR 5.0 50.0 Typical junction capacitance (Note1) CJ 15 Typical thermal resistance (Note2) RθJA 50 TJ - 55---- + 150 TSTG - 55 ---- +150 Operating junction temperature range Storage temperature range A pF ／Ｗ NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea ERB12-01---ERB12-10 FIG.2 -- TYPICAL JUNCTION CAPACITANCE 100 100 10 JUNCTION CAPACITANCE,pF TJ=25 Pulse Width=300uS 4 2 1. 0 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.1 -- TYPICAL FORWARD CHARACTERISTIC 0. 4 0. 1 0 .04 0 . 01 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1. 8 60 40 20 10 4 2 1 0.1 INSTANTANEOUS FORWARD VOLTAGE,VOLTS .4 1.0 2 10 100 REVERSE VOLTAGE,VOLTS FIG.4 -- FORWARD DERATING CURVE 1.0 70 TJ=125 8.3ms Single Half Sine-Wave 60 50 40 30 20 10 0 1 4 10 NUMBER OF CYCLES AT 60Hz 100 AVERAGE FORWARD CURRENT AMPERES 80 AMPERES .2 2.0 FIG.3 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT TJ=25 f=1MHz .8 .6 .4 Single Phase Half Wave 60H Z Resistive or Inductive Load .2 0 25 50 75 100 125 150 175 200 AMBIENNT TEMPERATURE, www.diode.kr