EC4302C Ordering number : EN7035A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4302C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --50 Gate-to-Source Voltage VGSS ±10 V --0.07 A Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD PW≤10µs, duty cycle≤1% V --0.28 A 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS Conditions ID=--1mA, VGS=0V VDS=--50V, VGS=0V Ratings min typ Unit max --50 V --1 µA ±10 µA Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) yfs VGS=±8V, VDS=0V VDS=--10V, ID=--100µA VDS=--10V, ID=--40mA RDS(on)1 RDS(on)2 ID=--40mA, VGS=--4V ID=--20mA, VGS=--2.5V 18 23 Static Drain-to-Source On-State Resistance 20 28 Ω ID=--5mA, VGS=--1.5V VDS=--10V, f=1MHz 30 60 Ω Input Capacitance RDS(on)3 Ciss Cutoff Voltage V mS Ω pF 4.2 pF 1.3 pF td(on) tr See specified Test Circuit. 20 ns See specified Test Circuit. 35 ns td(off) tf See specified Test Circuit. 160 ns See specified Test Circuit. 150 ns Reverse Transfer Capacitance Crss Turn-ON Delay Time Fall Time 100 7.4 Coss Turn-OFF Delay Time 70 --1.4 VDS=--10V, f=1MHz VDS=--10V, f=1MHz Output Capacitance Rise Time --0.4 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 41006PE MS IM TB-00002222 / 92501 TS IM TA-3331 No.7035-1/5 EC4302C Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg nC Qgs VDS=--10V, VGS=--10V, ID=--70mA VDS=--10V, VGS=--10V, ID=--70mA 1.40 Gate-to-Source Charge 0.16 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--70mA 0.23 Diode Forward Voltage VSD IS=--70mA, VGS=0V --0.9 Package Dimensions nC --1.2 V Type No. Indication unit : mm 7036-001 Top View T 0.8 3 1 2 1.0 4 Top view 0.6 Polarity Discriminating Mark 0.5 0.3 0.2 2 4 3 0.6 1 Bottom View 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : ECSP1008-4 Electrical Connection Switching Time Test Circuit Polarity mark (Top) VDD= --25V Gate 0V --4V Drain VIN Source ID= --40mA RL=625Ω VIN *Electrodes : on the bottom Top view Polarity mark (Top) Drain VOUT D PW=10µs D.C.≤1% G P.G 50Ω S EC4302C Gate Source No.7035-2/5 EC4302C V V .0 --2 --0.04 --0.03 VGS= --1.5V --0.08 --0.06 --0.04 25 °C --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 0 --2.0 --1.0 --1.5 --2.0 --2.5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 30 25 --40mA ID= --20mA 15 10 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 7 5 3 Ta=75°C 2 25°C --25°C 10 --0.01 --10 2 3 5 7 --0.1 Drain Current, ID -- A IT00092 RDS(on) -- ID 3 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 100 7 5 Ta=75°C 25°C --25°C 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5V -2. =S ,VG mA 20 = ID ,V mA -- 40 0V -4. =GS 15 10 --60 --40 --20 0 20 40 60 80 Ta=75°C 25°C --25°C 3 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 160 IT00096 5 7 --0.01 Drain Current, ID -- A yfs -- ID 1.0 30 -20 =ID 5 IT00094 35 25 7 10 --0.001 3 RDS(on) -- Ta 40 3 IT00093 VGS= --1.5V Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS= --2.5V 2 2 RDS(on) -- ID 100 2 3 --4.0 IT00091 VGS= --4V 35 0 --3.5 RDS(on) -- ID 100 Ta=25°C 20 --3.0 Gate-to-Source Voltage, VGS -- V IT00090 RDS(on) -- VGS 40 --0.5 --25 °C --0.01 Ta= 7 5°C --0.02 --0.10 75° C Drain Current, ID -- A --0.05 VDS= --10V 25°C --0.12 Ta= -- --3 .0 V V --6 .0 V .5 --2 --3 .5 Drain Current, ID -- A --4 . 0V --0.06 ID -- VGS --0.14 25°C ID -- VDS --0.07 2 3 IT00095 VDS= --10V 7 5 3 2 °C Ta= --25 0.1 75°C 7 25°C 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00097 No.7035-3/5 EC4302C IS -- VSD 3 VGS=0V Switching Time, SW Time -- ns 7 C --25° 5°C 25° C 5 Ta= 7 Source Current, IS -- A --0.1 2 VDD= --25V VGS = --4V 7 2 3 SW Time -- ID 1000 5 tf 3 2 td(off) 100 7 5 tr 3 td(on) 2 --0.01 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 7 5 Coss 3 2 Crss 1.0 7 5 3 2 7 --0.1 IT00099 VDS= --10V ID= --70mA --9 Ciss 5 VGS -- Qg --10 3 2 3 Drain Current, ID -- A f=1MHz 10 2 IT00098 Ciss, Coss, Crss -- VDS 100 7 5 --8 --7 --6 --5 --4 --3 --2 --1 0 0.1 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain-to-Source Voltage, VDS -- V --45 --50 IT00100 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00101 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 10 --0.01 --1.2 --1.1 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02381 No.7035-4/5 EC4302C Note on usage : Since the EC4302C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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