NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W, Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF06N62Z NDP06N62Z Unit Drain−to−Source Voltage VDSS 620 V Continuous Drain Current RqJC ID 6.0 (Note 1) A Continuous Drain Current RqJC, TA = 100°C ID 3.8 (Note 1) A Pulsed Drain Current, VGS @ 10 V IDM 20 (Note 1) A Power Dissipation RqJC PD Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 6.0 A EAS 113 mJ ESD (HBM) (JESD 22−A114) Vesd 3000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) VISO Peak Diode Recovery dv/dt 4.5 (Note 2) V/ns Continuous Source Current (Body Diode) IS 6.0 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C VDSS RDS(ON) (TYP) @ 3 A 620 V 0.98 Ω N−Channel D (2) 31 113 4500 G (1) W − S (3) TO−220FP CASE 221D STYLE 1 MARKING DIAGRAM V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C NDF06N62ZG or NDP06N62ZG AYWW Gate TO−220AB CASE 221A STYLE 5 A Y WW G Source Drain = Location Code = Year = Work Week = Pb−Free Package ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 0 1 Device Package Shipping NDF06N62ZG TO−220FP (Pb−Free) 50 Units/Rail NDP06N62ZG TO−220AB (Pb−Free) 50 Units/Rail In Development Publication Order Number: NDF06N62Z/D NDF06N62Z, NDP06N62Z THERMAL RESISTANCE Symbol NDF06N62Z NDP06N62Z Unit Junction−to−Case (Drain) Parameter RqJC 4.0 1.1 °C/W Junction−to−Ambient Steady State (Note 3) RqJA 50 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min VGS = 0 V, ID = 1 mA BVDSS 620 Reference to 25°C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current 25°C VDS = 620 V, VGS = 0 V Gate−to−Source Forward Leakage V 0.6 IDSS V/°C 1 125°C mA 50 VGS = ±20 V IGSS Static Drain−to−Source On−Resistance VGS = 10 V, ID = 3.0 A RDS(on) Gate Threshold Voltage VDS = VGS, ID = 100 mA VGS(th) VDS = 15 V, ID = 3.0 A gFS 5.0 S Ciss 923 pF Coss 106 Reverse Transfer Capacitance Crss 23 Total Gate Charge Qg 32 ±10 mA 1.2 W 4.5 V ON CHARACTERISTICS (Note 4) Forward Transconductance 0.98 3.0 DYNAMIC CHARACTERISTICS Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Output Capacitance Gate−to−Source Charge nC Qgs 6.3 Qgd 17 Plateau Voltage Vgp 6.3 V Gate Resistance Rg 3.2 W td(on) 13 ns tr 19 td(off) 32 tf 28 VDD = 310 V, ID = 6.0 A, VGS = 10 V Gate−to−Drain (“Miller”) Charge RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = 310 V, ID = 6.0 A, VGS = 10 V, RG = 5 Ω Fall Time SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 6.0 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 6.0 A, di/dt = 100 A/ms trr 338 ns Qrr 2.0 mC Reverse Recovery Charge 3. Insertion mounted 4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 1.6 V NDF06N62Z, NDP06N62Z TYPICAL CHARACTERISTICS 12 6.8 V VDS ≥ 30 V 6.6 V 15 V 8 6.4 V 6 6.2 V 6.0 V 4 5.8 V 2 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 V 10 7V 5.6 V 0 5 10 15 20 8 6 25 2 TJ = −55°C 3 4 6 5 7 8 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.5 1 0.5 5 6 7 8 9 10 VGS (V) 1.75 TJ = 25°C 1.5 1.25 VGS = 10 V 1 0.75 0.5 0 2 4 6 8 10 12 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.6 1.15 BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 3 A TJ = 25°C 2.2 TJ = 150°C 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2 0 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TJ = 25°C ID, DRAIN CURRENT (A) 12 ID = 3 A VGS = 10 V 1.8 1.4 1.0 0.6 0.2 −50 −25 0 25 50 75 100 125 150 1.1 ID = 1 mA 1.05 1.0 0.95 0.9 −50 TJ, JUNCTION TEMPERATURE (°C) −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. BVDSS Variation with Temperature http://onsemi.com 3 150 NDF06N62Z, NDP06N62Z TYPICAL CHARACTERISTICS 2000 100 VGS = 0 V TJ = 25°C 10 C, CAPACITANCE (pF) IDSS, LEAKAGE (mA) VGS = 0 V TJ = 150°C 1 TJ = 100°C 0.1 1500 Ciss 1000 Coss 500 Crss 0.01 0 100 200 300 500 400 0 600 0 Figure 7. Drain−to−Source Leakage Current vs. Voltage QT 300 VDS 10 200 VGS 5 0 VDS = 310V TJ = 25°C ID = 6 A 0 5 15 10 20 25 30 100 0 35 VDD = 310 V ID = 6 A VGS = 10 V td(on) 10 1 1 10 100 Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 10. Resistive Switching Time Variation vs. Gate Resistance 100 VGS = 0 V TJ = 25°C ID, DRAIN CURRENT (A) IS, SOURCE CURRENT (A) tr tf RG, GATE RESISTANCE (W) 4 3 2 1 0 0.4 td(off) 100 Qg, TOTAL GATE CHARGE (nC) 6 5 200 1000 t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (V) 400 Qgd 150 Figure 8. Capacitance Variation VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 Qgs 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 15 50 0.5 0.6 0.7 0.8 0.9 100 ms 10 ms dc 1 VGS = 10 V Single Pulse TC = 25°C 0.1 0.01 1.0 10 ms 1 ms 10 RDS(on) Limit Thermal Limit Package Limit 1 10 100 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Diode Forward Voltage vs. Current Figure 12. Maximum Rated Forward Biased Safe Operating Area for NDF06N62Z http://onsemi.com 4 1000 NDF06N62Z, NDP06N62Z TYPICAL CHARACTERISTICS 10 R(t) (C/W) 1.0 0.1 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 0.01 SINGLE PULSE RqJC = 4.0°C/W Steady State 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 PULSE TIME (s) Figure 13. Thermal Impedance for NDF06N62Z LEADS HEATSINK 0.110″ MIN Figure 14. Isolation Test Diagram Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 100 1000 NDF06N62Z, NDP06N62Z PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. S Q A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B TO−220AB CASE 221A−09 ISSUE AE −T− B F T SEATING PLANE C S A U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z 4 Q MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE Y M INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 DIM A B C D F G H J K L N Q R S U U J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. N MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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