Microchip MCP73843 Advanced single or dual cell lithium-ion/ lithium-polymer charge management controller Datasheet

MCP73841/2/3/4
Advanced Single or Dual Cell Lithium-Ion/
Lithium-Polymer Charge Management Controllers
Features
Description
• Linear Charge Management Controllers
• High-Accuracy Preset Voltage Regulation:
- + 0.5% (max)
• Four Preset Voltage Regulation Options:
- 4.1V - MCP73841-4.1, MCP73843-4.1
- 4.2V - MCP73841-4.2, MCP73843-4.2
- 8.2V - MCP73842-8.2, MCP73844-8.2
- 8.4V - MCP73842-8.4, MCP73844-8.4
• Programmable Charge Current
• Programmable Safety Charge Timers
• Preconditioning of Deeply Depleted Cells
• Automatic End-of-Charge Control
• Optional Continuous Cell Temperature
Monitoring (MCP73841 and MCP73842)
• Charge Status Output for Direct LED Drive
• Automatic Power-Down when Input Power
Removed
• Temperature Range: -40°C to 85°C
• Packaging: MSOP-10 - MCP73841, MCP73842
MSOP-8 - MCP73843, MCP73844
The MCP7384X family of devices are highly advanced
linear charge management controllers for use in
space-limited, cost-sensitive applications. The
MCP73841 and MCP73842 combine high accuracy,
constant-voltage, constant-current regulation, cell preconditioning, cell temperature monitoring, advanced
safety timers, automatic charge termination and
charge status indication in space-saving, 10-pin
MSOP packages. The MCP73841 and MCP73842
provide complete, fully-functional, stand-alone charge
management solutions.
Applications
The MCP73842 and MCP73844 are designed for
applications utilizing dual series cell Lithium-Ion or
Lithium-Polymer battery packs. Two preset voltage
regulation options are available (8.2V and 8.4V). The
MCP73842 and MCP73844 operate with an input
voltage range of 8.7V to 12V.
Lithium-Ion/Lithium-Polymer Battery Chargers
Personal Data Assistants
Cellular Telephones
Hand-Held Instruments
Cradle Chargers
Digital Cameras
MP3 Players
The MCP73841 and MCP73843 are designed for
applications utilizing single-cell Lithium-Ion or LithiumPolymer battery packs. Two preset voltage regulation
options are available (4.1V and 4.2V) for use with either
coke or graphite anodes. The MCP73841 and
MCP73843 operate with an input voltage range of 4.5V
to 12V.
The MCP7384X family of devices are fully specified
over the ambient temperature range of -40°C to +85°C.
Package Types
1A Lithium-Ion Battery Charger
MA2Q705
5V
100 m
10 µF
NDS8434
1
+
-
8
SENSE DRV
2
3
4
100 k
VBAT
VDD
STAT1
EN
1
2
3
4
5
10
9
8
7
6
DRV
VBAT
VSS
TIMER
THERM
8-Pin MSOP
7
VSS 6
TIMER
Single
Lithium-Ion
Cell
SENSE
VDD
STAT1
EN
THREF
MCP73841
MCP73842
10-Pin MSOP
Typical Application Circuit
10 µF
5
MCP73843
 2003-2013 Microchip Technology Inc.
0.1 µF
SENSE
VDD
STAT1
EN
1
2
3
4
MCP73843
MCP73844
•
•
•
•
•
•
•
The MCP73843 and MCP73844 employ all the
features of the MCP73841 and MCP73842, with the
exception of the cell temperature monitor. The
MCP73843 and MCP73844 are offered in 8-pin MSOP
packages.
8
7
6
5
DRV
VBAT
VSS
TIMER
DS21823D-page 1
MCP73841/2/3/4
Functional Block Diagram
VDD
VDD
VREF
1 k
–
SENSE
Charge
Current
Amplifier
+
90 k
DRV
Charge Current
Control Amplifier
+
Voltage Control
Amplifier
+
-
–
12 k
VREF
90 k
10 k
Charge
Termination
Comparator
+
-
IREG/10
VREF
Charge_ok
Precon
Precondition
Control
10 k
+
-
VBAT
Precondition
Comp. +
-
300 k
(825 k)
UVLO
Comparator
74.21 k
Constant-Voltage/
Recharge Comp.
VUVLO
+
EN
Power-On
Delay
0.79 k
VREF
150.02 k
Bias and
Reference
Generator
VUVLO
VREF (1.2V)
5.15 k
(4.29 k)
THREF
VSS
100 k
+
-
THERM
Temperature
Comparators
STAT1
Drv Stat 1
50 k
+
50 k
TIMER
IREG/10
Charge Control,
Charge Timers,
And
Status Logic
Oscillator
MCP73841 and MCP73842 Only
DS21823D-page 2
Charge_ok
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
*Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings †
VDD.................................................................................13.5V
All inputs and outputs w.r.t. VSS ................ -0.3 to (VDD+0.3)V
Current at DRV Pin ......................................................±4 mA
Current at STAT1 Pin .................................................±30 mA
Maximum Junction Temperature, TJ ............................. 150°C
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins:
Human Body Model (1.5 k in Series with 100 pF)2 kV
Machine Model (200 pF, No Series Resistance) .............200V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG(Typ) + 1V].
Parameters
Sym
Min
Typ
Max
Units
Conditions
MCP73841, MCP73843
4.5
–
12
V
MCP73842, MCP73844
8.7
–
12
V
–
–
0.25
0.75
4
4
µA
mA
MCP73841, MCP73843
4.25
4.45
4.60
V
VDD Low-to-High
MCP73842, MCP73844
8.45
8.65
8.90
V
VDD Low-to-High
Supply Input
Supply Voltage
VDD
Supply Current
ISS
UVLO Start Threshold
Disabled
Operating
VDD =VREG(Typ)+1V
VSTART
UVLO Stop Threshold
VSTOP
MCP73841, MCP73843
4.20
4.40
4.55
V
VDD High-to-Low
MCP73842, MCP73844
8.40
8.60
8.85
V
VDD High-to-Low
MCP73841-4.1,
MCP73843-4.1
4.079
4.1
4.121
V
VDD = [VREG(Typ)+1V], IOUT = 10 mA,
TA = -5°C to +55°C
MCP73841-4.2,
MCP73843-4.2
4.179
4.2
4.221
V
VDD = [VREG(Typ)+1V], IOUT = 10 mA,
TA = -5°C to +55°C
MCP73842-8.2,
MCP73844-8.2
8.159
8.2
8.241
V
VDD = [VREG(Typ)+1V], IOUT = 10 mA,
TA = -5°C to +55°C
MCP73842-8.4,
MCP73844-8.4
8.358
8.4
8.442
V
VDD = [VREG(Typ)+1V], IOUT = 10 mA,
TA = -5°C to +55°C
Voltage Regulation (Constant-Voltage Mode)
Regulated Output Voltage
VREG
Line Regulation
VBAT/
VBAT)|/VDD
–
0.025
0.25
%/V
Load Regulation
VBAT|/VBAT
–
0.01
0.25
%
IOUT = 10 mA to 150 mA,
VDD = [VREG(Typ)+1V]
PSRR
–
-58
–
dB
IOUT = 10 mA, 100 Hz
–
-42
–
dB
IOUT = 10 mA, 1 kHz
–
-30
–
dB
IOUT = 10 mA, 10 kHz
–
0.4
1
µA
VDD Floating, VBAT = VREG(Typ)
110
120
mV
VDD – VSENSE,
TA = -5°C to +55°C
Supply Ripple Attenuation
Output Reverse Leakage
Current
IDISCHARGE
VDD = [VREG(Typ)+1V] to 12V,
IOUT = 10 mA
Current Regulation (Fast Charge Constant-Current Mode)
Fast Charge Current
Regulation Threshold
 2003-2013 Microchip Technology Inc.
VFCS
100
DS21823D-page 3
MCP73841/2/3/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG(Typ) + 1V].
Parameters
Sym
Min
Typ
Max
Units
Conditions
Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
5
10
15
mV
VDD – VSENSE,
TA = -5°C to +55°C
MCP73841-4.1,
MCP73843-4.1
2.70
2.80
2.90
V
VBAT Low-to-High
MCP73841-4.2,
MCP73843-4.2
2.75
2.85
2.95
V
VBAT Low-to-High
MCP73842-8.2,
MCP73844-8.2
5.40
5.60
5.80
V
VBAT Low-to-High
MCP73842-8.4,
MCP73844-8.4
5.50
5.70
5.90
V
VBAT Low-to-High
4
7
10
mV
Precondition Current
Regulation Threshold
VPCS
Precondition Threshold Voltage
VPTH
Charge Termination
Charge Termination Threshold
VTCS
VDD – VSENSE,
TA = -5°C to +55°C
Automatic Recharge
Recharge Threshold Voltage
VRTH
MCP73841,
MCP73843
VREGVREGVREG300 mV 200 mV 100 mV
V
VBAT High-to-Low
MCP73842,
MCP73844
VREGVREGVREG600 mV 400 mV 200 mV
V
VBAT High-to-Low
External MOSFET Gate Drive
Gate Drive Current
IDRV
–
2
–
mA
Sink, CV Mode
–
-0.5
–
mA
Source, CV Mode
Gate Drive Minimum Voltage
VDRVMIN
–
–
1.0
V
VDD = 4.5V
Gate - Source Clamp Voltage
VGS
-7.0
–
-4.5
V
VDD = 12.0V
2.475
2.55
2.625
V
TA = +25°C, VDD = VREG(Typ)+1V,
ITHREF = 0 mA
TCTHREF
–
+50
–
ppm/°C
ITHREF
200
–
–
µA
Thermistor Reference Line
Regulation
VTHREF/
VTHREF)|/
VDD
–
0.1
0.25
%/V
Thermistor Reference Load
Regulation
VTHREF/
VTHREF
–
0.01
0.10
%
Thermistor Reference - MCP73841, MCP73842
Thermistor Reference Output
Voltage
Temperature Coefficient
Thermistor Reference Source
Current
VTHREF
VDD=[VREG(Typ)+1V] to 12V
ITHREF = 0 mA to 0.20 mA
Thermistor Comparator - MCP73841, MCP73842
VT1
1.18
1.25
1.32
V
VT1HYS
–
-50
–
mV
VT2
0.59
0.62
0.66
V
VT2HYS
–
80
–
mV
|IBIAS|
–
–
2
µA
Sink Current
ISINK
4
7
12
mA
Low Output Voltage
VOL
–
200
400
mV
ISINK = 1 mA
Input Leakage Current
ILK
–
0.01
1
µA
ISINK = 0 mA, VSTAT1 = 12V
Upper Trip Threshold
Upper Trip Point Hysteresis
Lower Trip Threshold
Lower Trip Point Hysteresis
Input Bias Current
Status Indicator
DS21823D-page 4
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C.
Typical values are at +25°C, VDD = [VREG(Typ) + 1V].
Parameters
Sym
Min
Typ
Max
Units
Input High-Voltage Level
VIH
1.4
-
–
V
Input Low-Voltage Level
VIL
–
-
0.8
V
Input Leakage Current
ILK
–
0.01
1
µA
Conditions
Enable Input
VENABLE = 12V
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD= [VREG(Typ)+1V].
Parameters
Sym
Min
Typ
Max
Units
tSTART
–
–
5
msec
VDD Low-to-High
tDELAY
–
–
1
msec
VBAT< VPTH to VBAT > VPTH
Current Rise Time Out of
Preconditioning
tRISE
–
–
1
msec
IOUT Rising to 90% of IREG
Fast Charge Safety Timer Period
tFAST
1.1
1.5
1.9
Hours
CTIMER = 0.1 µF
tPRECON
45
60
75
Minutes
CTIMER = 0.1 µF
tTERM
2.2
3.0
3.8
Hours
CTIMER = 0.1 µF
Status Output turn-off
tOFF
–
–
200
µsec
ISINK = 10 mA to 0 mA
Status Output turn-on
tON
–
–
200
µsec
ISINK = 0 mA to 10 mA
UVLO Start Delay
Conditions
Current Regulation
Transition Time Out of
Preconditioning
Preconditioning Current Regulation
Preconditioning Charge Safety
Timer Period
Charge Termination
Elapsed Time Termination Period
Status Indicators
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V.
Typical values are at +25°C, VDD= [VREG(Typ)+1.0V].
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+85
°C
Operating Temperature Range
TA
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, MSOP-10
JA
113
°C/W
4-Layer JC51-7 Standard Board,
Natural Convection
Thermal Resistance, MSOP-8
JA
206
°C/W
Single-Layer SEMI G42-88 Board,
Natural Convection
 2003-2013 Microchip Technology Inc.
DS21823D-page 5
MCP73841/2/3/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C.
4.203
+55°C
MCP73841-4.2V
VDD = 5.2 V
1.20
+85°C
1.00
+25°C
ISS (mA)
VBAT (V)
4.201
1.40
MCP73841-4.2V
VDD = 5.2 V
4.202
4.200
4.199
4.198
0.80
+25°C
0.60
-45°C
0.40
-5°C
4.197
0.20
4.196
0.00
10
100
1000
10
100
IOUT (mA)
IOUT (mA)
FIGURE 2-1:
Battery Regulation Voltage
(VBAT) vs. Charge Current (IOUT).
FIGURE 2-4:
Supply Current (ISS) vs.
Charge Current (IOUT).
4.203
1.40
4.202
+55°C
MCP73841-4.2V
IOUT = 1000 mA
MCP73841-4.2V
IOUT = 1000 mA
1.00
+25°C
4.200
ISS (mA)
VBAT (V)
+85°C
1.20
4.201
4.199
4.198
+25°C
0.80
0.60
-45°C
0.40
-5°C
4.197
0.20
4.196
0.00
4.5
6.0
7.5
9.0
10.5
12.0
4.5
6.0
VDD (V)
4.203
4.202
+55°C
7.5
9.0
10.5
12.0
VDD (V)
FIGURE 2-2:
Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
FIGURE 2-5:
Supply Current (ISS) vs.
Supply Voltage (VDD).
1.40
MCP73841-4.2V
IOUT = 10 mA
MCP73841-4.2V
IOUT = 10 mA
1.20
4.201
1.00
+25°C
4.200
ISS (mA)
VBAT (V)
1000
4.199
4.198
0.80
0.60
-45°C
0.40
-5°C
4.197
+25°C
0.20
4.196
+85°C
0.00
4.5
6.0
7.5
9.0
10.5
12.0
VDD (V)
FIGURE 2-3:
Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
DS21823D-page 6
4.5
6.0
7.5
9.0
10.5
12.0
VDD (V)
FIGURE 2-6:
Supply Current (ISS) vs.
Supply Voltage (VDD).
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C.
8.408
8.404
1.00
ISS (mA)
+25°C
8.400
MCP73842-8.4V
VDD = 9.4 V
1.20
+55°C
8.402
VBAT (V)
1.40
MCP73842-8.4V
VDD = 9.4 V
8.406
8.398
8.396
0.80
0.60
-45°C
0.40
8.394
0.20
-5°C
8.392
8.390
0.00
10
100
1000
10
100
IOUT (mA)
8.408
8.404
1.40
1.20
+55°C
8.402
8.400
+85°C
8.398
8.396
+25°C
0.80
0.60
-45°C
0.40
8.394
0.20
-5°C
8.392
8.390
0.00
8.8
9.2
9.6
10
10.4 10.8 11.2 11.6
12
8.8
9.2
9.6
VDD (V)
FIGURE 2-8:
Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
8.404
MCP73842-8.4V
IOUT = 10 mA
FIGURE 2-11:
Supply Current (ISS) vs.
Supply Voltage (VDD).
1.40
MCP73842-8.4V
IOUT = 10 mA
1.20
+55°C
1.00
8.402
VBAT (V)
10.0 10.4 10.8 11.2 11.6 12.0
VDD (V)
8.400
+25°C
8.398
8.396
ISS (mA)
8.406
MCP73842-8.4V
IOUT = 1000 mA
1.00
+25°C
ISS (mA)
VBAT (V)
FIGURE 2-10:
Supply Current (ISS) vs.
Charge Current (IOUT).
MCP73842-8.4V
IOUT = 1000 mA
8.406
1000
IOUT (mA)
FIGURE 2-7:
Battery Regulation Voltage
(VBAT) vs. Charge Current (IOUT).
8.408
+85°C
+25°C
0.80
0.60
-45°C
0.40
8.394
-5°C
8.392
0.20
8.390
0.00
8.8
9.2
9.6 10.0 10.4 10.8 11.2 11.6 12.0
VDD (V)
FIGURE 2-9:
Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
 2003-2013 Microchip Technology Inc.
+25°C
+85°C
8.8
9.2
9.6
10.0 10.4 10.8 11.2 11.6 12.0
VDD (V)
FIGURE 2-12:
Supply Current (ISS) vs.
Supply Voltage (VDD).
DS21823D-page 7
MCP73841/2/3/4
Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C.
0.45
0.70
0.30
0.25
+85°C
0.20
0.15
+25°C
0.10
0.05
+85°C
0.60
0.50
+25°C
0.40
0.30
0.20
-45°C
0.10
-45°C
0.00
0.00
2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2
4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 8.4
VBAT (V)
VBAT (V)
FIGURE 2-13:
Output Reverse Leakage
Current (IDISCHARGE) vs. Battery Voltage (VBAT).
2.560
2.558
2.556
2.554
2.552
2.550
2.548
2.546
2.544
2.542
2.540
FIGURE 2-16:
Output Reverse Leakage
Current (IDISCHARGE) vs. Battery Voltage (VBAT).
MCP73841-4.2V
VDD = 5.2 V
+85°C
VTHREF (V)
VTHREF (V)
MCP73842-8.4V
VDD = Float
0.80
IDISCHARGE (µA)
0.35
IDISCHARGE (µA)
0.90
MCP73841-4.2V
VDD = Float
0.40
+25°C
-45°C
0
25
50
75
100
125
150
175
2.560
2.558
2.556
2.554
2.552
2.550
2.548
2.546
2.544
2.542
2.540
200
MCP73842-8.4V
VDD = 9.4 V
+85°C
+25°C
-45°C
0
25
50
ITHREF (µA)
2.568
150
175
200
MCP73842-8.4V
ITHREF = 100 µA
2.564
2.560
2.556
VTHREF (V)
2.560
VTHREF (V)
125
FIGURE 2-17:
Thermistor Reference
Voltage (VTHREF) vs. Thermistor Bias Current
(ITHREF).
MCP73841-4.2V
ITHREF = 100 µA
2.564
100
ITHREF (µA)
FIGURE 2-14:
Thermistor Reference
Voltage (VTHREF) vs. Thermistor Bias Current
(ITHREF).
2.568
75
+85°C
2.552
+25°C
2.548
2.556
+85°C
2.552
+25°C
2.548
-45°C
2.544
-45°C
2.544
2.540
2.540
4.5
6.0
7.5
9.0
10.5
12.0
VDD (V)
FIGURE 2-15:
Thermistor Reference
Voltage (VTHREF) vs. Supply Voltage (VDD).
DS21823D-page 8
8.8
9.2
9.6 10.0 10.4 10.8 11.2 11.6 12.0
VDD (V)
FIGURE 2-18:
Thermistor Reference
Voltage (VTHREF) vs. Supply Voltage (VDD).
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C.
VDD
VDD
VBAT
VBAT
MCP73841-4.2V
VDD Stepped From 5.2V to 6.2V
IOUT = 500 mA
COUT = 10 µF, X7R, Ceramic
MCP73841-4.2V
VDD Stepped From 5.2V to 6.2V
IOUT = 10 mA
COUT = 10 µF, X7R, Ceramic
FIGURE 2-19:
Line Transient Response.
MCP73841-4.2V
VDD = 5.2V
COUT = 10 µF, X7R, Ceramic
FIGURE 2-22:
MCP73841-4.2V
VDD = 5.2V
COUT = 10 µF, X7R, Ceramic
VBAT
100 mA
Line Transient Response.
IOUT
500 mA
FIGURE 2-23:
0
0
-10
-10
-20
-30
-40
MCP73841-4.2V
VDD = 5.2 V
VAC = 100 mVp-p
IOUT = 10 mA
COUT = 10 µF, X7R, CERAMIC
-60
-70
-80
0.01
0.1
1
10
100
1000
Attenuation (dB)
Attenuation (dB)
Load Transient Response.
-50
Power Supply Ripple
 2003-2013 Microchip Technology Inc.
Load Transient Response.
-20
-30
-40
MCP73841-4.2V
VDD = 5.2 V
VAC = 100 mVp-p
IOUT = 100 mA
COUT = 10 µF, X7R, CERAMIC
-50
-60
-70
-80
0.01
Frequency (kHz)
FIGURE 2-21:
Rejection.
IOUT
10 mA
10 mA
FIGURE 2-20:
VBAT
0.1
1
10
100
1000
Frequency (kHz)
FIGURE 2-24:
Rejection.
Power Supply Ripple
DS21823D-page 9
MCP73841/2/3/4
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN DESCRIPTION TABLE
MCP73841,
MCP73842
Pin No.
MCP73843,
MCP73844
Pin No.
Name
1
1
SENSE
2
2
VDD
3
3
STAT1
4
4
EN
3.1
Function
Charge Current Sense Input
Battery Management Input Supply
Charge Status Output
Logic Enable
5
—
THREF
Cell Temperature Sensor Bias
6
—
THERM
Cell Temperature Sensor Input
7
5
TIMER
Timer Set
8
6
VSS
Battery Management 0V Reference
9
7
VBAT
Battery Voltage Sense
10
8
DRV
Drive Output
Charge Current Sense Input
(SENSE)
Charge current is sensed via the voltage developed
across an external precision sense resistor. The sense
resistor must be placed between the supply voltage
(VDD) and the external pass transistor (Q1). A 220 m
sense resistor produces a fast charge current of
500 mA, typically.
3.6
Cell Temperature Sensor Input
(THERM)
Input for an external thermistor for continuous celltemperature monitoring and pre-qualification. Apply a
voltage equal to 0.85V to disable temperature-sensing.
3.7
Timer Set (TIMER)
All safety timers are scaled by CTIMER/0.1 µF.
3.2
Battery Management Input Supply
(VDD)
A supply voltage of [VREG(Typ) + 0.3V] to 12V is
recommended. Bypass to VSS with a minimum of
4.7 µF.
3.8
Connect to negative terminal of battery.
3.9
3.3
Charge Status Output (STAT1)
Battery Management 0V Reference
(VSS)
Battery Voltage Sense (VBAT)
Current limited, open-drain drive for direct connection
to a LED for charge status indication. Alternatively, a
pull-up resistor can be applied for interfacing to a host
microcontroller.
Voltage sense input. Connect to positive terminal of
battery. Bypass to VSS with a minimum of 4.7 µF to
ensure loop stability when the battery is disconnected.
A precision internal resistor divider regulates the final
voltage on this pin to VREG.
3.4
3.10
Logic Enable (EN)
Input to force charge termination, initiate charge, clear
faults or disable automatic recharge.
3.5
Drive Output (DRV)
Direct output drive of an external P-channel MOSFET
for current and voltage regulation.
Cell Temperature Sensor Bias
(THREF)
Voltage reference to bias external thermistor for
continuous cell temperature monitoring and
prequalification.
DS21823D-page 10
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
4.0
DEVICE OVERVIEW
The MCP7384X family of devices are highly advanced,
linear charge management controllers. Figure 4-1
depicts the operational flow algorithm from charge
initiation to completion and automatic recharge.
4.1
Charge Qualification and
Preconditioning
Upon insertion of a battery or application of an external
supply, the MCP7384X family of devices automatically
perform a series of safety checks to qualify the charge.
The input source voltage must be above the
undervoltage lockout threshold, the enable pin must be
above the logic-high level and the cell temperature
monitor must be within the upper and lower thresholds.
The cell temperature monitor applies to both the
MCP73841 and MCP73842, with the qualification
parameters being continuously monitored. Deviation
beyond the limits automatically suspends or terminates
the charge cycle.
Once the qualification parameters have been met, the
MCP7384X initiates a charge cycle. The charge status
output is pulled low throughout the charge cycle (see
Table 5-1 for charge status outputs). If the battery
voltage is below the preconditioning threshold (VPTH),
the MCP7384X preconditions the battery with a tricklecharge. The preconditioning current is set to
approximately 10% of the fast charge regulation
current. The preconditioning trickle-charge safely
replenishes deeply depleted cells and minimizes heat
dissipation in the external pass transistor during the
initial charge cycle. If the battery voltage has not
exceeded the preconditioning threshold before the
preconditioning timer has expired, a fault is indicated
and the charge cycle is terminated.
4.2
4.3
Constant-Voltage Regulation
When the battery voltage reaches the regulation
voltage (VREG), constant-voltage regulation begins.
The MCP7384X monitors the battery voltage at the
VBAT pin. This input is tied directly to the positive
terminal of the battery. The MCP7384X is offered in
four fixed-voltage versions for single or dual series cell
battery packs with either coke or graphite anodes:
-
4.4
4.1V (MCP73841-4.1, MCP73843-4.1)
4.2V (MCP73841-4.2, MCP73843-4.2)
8.2V (MCP73842-8.2, MCP73844-8.2)
8.4V (MCP73842-8.4, MCP73844-8.4)
Charge Cycle Completion and
Automatic Re-Charge
The MCP7384X monitors the charging current during
the constant-voltage regulation phase. The charge
cycle is considered complete when the charge current
has diminished below approximately 7% of the
regulation current (IREG) or the elapsed timer has
expired.
The MCP7384X automatically begins a new charge
cycle when the battery voltage falls below the recharge
threshold (VRTH), assuming all the qualification
parameters are met.
Constant-Current Regulation –
Fast Charge
Preconditioning ends and fast charging begins, when
the battery voltage exceeds the preconditioning
threshold. Fast charge regulates to a constant-current,
IREG, based on the supply voltage minus the voltage at
the SENSE input (VFCS) developed by the drop across
an external sense resistor (RSENSE). Fast charge
continues until the battery voltage reaches the
regulation voltage (VREG); or until the fast charge timer
expires. In this case, a fault is indicated and the charge
cycle is terminated.
 2003-2013 Microchip Technology Inc.
DS21823D-page 11
 2003-2013 Microchip Technology Inc.
Initialize
Note: The qualification parameters are continuously
monitored throughout the charge cycle.
Note
VDD > VUVLO
EN High
No
STAT1 = Off
Yes
Note
Temperature OK
Yes
Preconditioning Phase
Charge Current = IPREG
Reset Safety Timer
No
VBAT > VPTH
No
STAT1 = Flashing
Charge Current = 0
STAT1 = On
Yes
VBAT > VPTH
Constant-Current
Phase
Charge Current = IREG
Reset Safety Timer
Yes
VBAT = VREG
No
No
Yes
DS21823D-page 12
FIGURE 4-1:
IOUT < ITERM
Elapsed Timer
Expired
Yes
No
Yes Fault
Charge Current = 0
Reset Safety Timer
Yes
Safety Timer
Expired
No
No
Yes
Temperature OK
No
STAT1 = Flashing
Safety Timer Suspended
Charge Current = 0
Yes
VDD < VUVLO
Temperature OK
Temperature OK
or EN Low
No
No
No
Yes STAT1 = Flashing
STAT1 = Flashing
STAT1 = Flashing
Safety Timer Suspended
Safety Timer Suspended
Charge Current = 0
Charge Current = 0
Operational Flow Algorithm - MCP73841 and MCP73842.
Yes Charge Termination
Charge Current = 0
Reset Safety Timer
VDD < VUVLO
VBAT < VRTH
or EN Low
Yes
No
STAT1 = Off
MCP73841/2/3/4
Safety Timer
Expired
Constant-Voltage Phase
Output Voltage = VREG
MCP73841/2/3/4
5.0
DETAILED DESCRIPTION
5.1
Analog Circuitry
5.1.1
For NTC thermistors:
2  RCOLD  RHOT
R T1 = ---------------------------------------------RCOLD – RHOT
CHARGE CURRENT SENSE INPUT
(SENSE)
Fast charge current regulation is maintained by the
voltage drop developed across an external sense
resistor (RSENSE) applied to the SENSE input pin. The
following formula calculates the value for RSENSE:
2  RCOLD  RHOT
R T2 = ---------------------------------------------RCOLD – 3  RHOT
For PTC thermistors:
2  RCOLD  RHOT
R T1 = ---------------------------------------------RHOT – RCOLD
V FCS
RSENSE = -----------I REG
2  RCOLD  RHOT
R T2 = ---------------------------------------------RHOT – 3  RCOLD
where:
IREG is the desired fast charge current in amps
The preconditioning trickle-charge current and the
charge termination current are scaled to approximately
10% and 7% of IREG , respectively.
5.1.2
BATTERY MANAGEMENT INPUT
SUPPLY (VDD)
The VDD input is the input supply to the MCP7384X.
The MCP7384X automatically enters a power-down
mode if the voltage on the VDD input falls below the
undervoltage lockout voltage (VSTOP). This feature
prevents draining the battery pack when the VDD
supply is not present.
5.1.3
CELL TEMPERATURE SENSOR
BIAS (THREF)
A 2.55V voltage reference is provided to bias an
external thermistor for continuous cell temperature
monitoring and pre-qualification. A ratio metric window
comparison is performed at threshold levels of
VTHREF/2 and VTHREF/4. Cell temperature monitoring
is provided by both the MCP73841 and MCP73842.
5.1.4
CELL TEMPERATURE SENSOR
INPUT (THERM)
The MCP73841 and MCP73842 continuously monitor
temperature by comparing the voltage between the
THERM input and VSS with the upper and lower
temperature thresholds. A negative or positive
temperature coefficient (NTC or PTC) thermistor and
an external voltage divider typically develop this
voltage. The temperature-sensing circuit has its own
reference, to which it performs a ratio metric
comparison. Therefore, it is immune to fluctuations in
the supply input (VDD). The temperature-sensing circuit
is removed from the system when VDD is not applied,
eliminating additional discharge of the battery pack.
where:
RCOLD and RHOT are the thermistor resistance
values at the temperature window of interest.
Applying a voltage equal to 0.85V to the THERM input
disables temperature monitoring.
5.1.5
TIMER SET INPUT (TIMER)
The TIMER input programs the period of the safety
timers by placing a timing capacitor (CTIMER) between
the TIMER input pin and VSS. Three safety timers are
programmed via the timing capacitor.
The preconditioning safety timer period:
C TIMER
tPRECON = -------------------  1.0Hour s
0.1F
The fast charge safety timer period:
C TIMER
t FAST = -------------------  1.5Hours
0.1F
The elapsed time termination period:
C TIMER
t TERM = -------------------  3.0Hours
0.1F
The preconditioning timer starts after qualification and
resets when the charge cycle transitions to the constant-current, fast charge phase. The fast charge and
elapsed timers start once the MCP7384X transitions
from preconditioning. The fast charge timer resets
when the charge cycle transitions to the constant-voltage phase. The elapsed timer will expire and terminate
the charge if the sensed current does not diminish
below the termination threshold.
Figure 6-1 depicts a typical application circuit with
connection of the THERM input. The resistor values of
RT1 and RT2 are calculated with the following
equations.
 2003-2013 Microchip Technology Inc.
DS21823D-page 13
MCP73841/2/3/4
5.1.6
BATTERY VOLTAGE SENSE (VBAT)
The MCP7384X monitors the battery voltage at the
VBAT pin. This input is tied directly to the positive
terminal of the battery. The MCP7384X is offered in
four fixed-voltage versions for single or dual series cell
battery packs, with either coke or graphite anodes:
-
4.1V (MCP73841-4.1, MCP73843-4.1)
4.2V (MCP73841-4.2, MCP73843-4.2)
8.2V (MCP73842-8.2, MCP73844-8.2)
8.4V (MCP73842-8.4, MCP73844-8.4)
5.1.7
DRIVE OUTPUT (DRV)
The MCP7384X controls the gate drive to an external
P-channel MOSFET. The P-channel MOSFET is
controlled in the linear region regulating current and
voltage supplied to the cell. The drive output is
automatically turned off when the voltage on the VDD
input falls below the undervoltage lockout voltage
(VSTOP).
5.2
5.2.1
Digital Circuitry
CHARGE STATUS OUTPUT (STAT1)
A status output provides information on the state-ofcharge. The current-limited, open-drain output can be
used to illuminate an external LED. Optionally, a pull-up
resistor can be used on the output for communication
with a host microcontroller. Table 5-1 summarizes the
state of the status output during a charge cycle.
TABLE 5-1:
STATUS OUTPUTS
Charge Cycle State
Stat1
Qualification
OFF
Preconditioning
ON
Constant-Current Fast
Charge
ON
Constant-Voltage
ON
Charge Complete
OFF
Safety Timer Fault
Flashing
(1 Hz, 50% duty cycle)
Cell Temperature Invalid
Flashing
(1 Hz, 50% duty cycle)
Disabled - Sleep mode
OFF
Battery Disconnected
OFF
The flashing rate (1 Hz) is based off a timer capacitor
(CTIMER) of 0.1 µF. The rate will vary based on the
value of the timer capacitor.
5.2.2
LOGIC ENABLE (EN)
The logic-enable input pin (EN) can be used to
terminate a charge anytime during the charge cycle,
initiate a charge cycle or initiate a recharge cycle.
Applying a logic-high input signal to the EN pin, or tying
it to the input source, enables the device. Applying a
logic-low input signal disables the device and
terminates a charge cycle. When disabled, the device’s
supply current is reduced to 0.25 µA, typically.
DS21823D-page 14
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
6.0
APPLICATIONS
cells: constant-current followed by constant-voltage.
Figure 6-1 depicts a typical stand-alone application
circuit, while Figure 6-2 depicts the accompanying
charge profile.
The MCP7384X is designed to operate in conjunction
with either a host microcontroller or in stand-alone
applications. The MCP7384X provides the preferred
charge algorithm for Lithium-Ion and Lithium-Polymer
Voltage
Regulated
Wall Cube
Optional
Reverse
Blocking
Diode
Q1
RSENSE
SENSE
VDD
STAT1
RT1
10 DRV
VBAT
1
2
9
3
MCP73841 8
EN 4
THREF 5
7
VSS
TIMER
CTIMER
6 THERM
RT2
FIGURE 6-1:
+
-
Battery
Pack
Typical Application Circuit.
Preconditioning
Phase
Constant-Current
Phase
Constant-Voltage
Phase
Regulation Voltage
(VREG)
Regulation Current
(IREG)
Charge
Voltage
Transition Threshold
(VPTH)
Charge
Current
Precondition Current
(IPREG)
Termination Current
(ITERM)
Precondition
Safety Timer
Fast Charge
Safety Timer
Elapsed Time
Termination Timer
FIGURE 6-2:
Typical Charge Profile.
 2003-2013 Microchip Technology Inc.
DS21823D-page 15
MCP73841/2/3/4
6.1
Application Circuit Design
Due to the low efficiency of linear charging, the most
important factors are thermal design and cost, which are
a direct function of the input voltage, output current and
thermal impedance between the external P-channel
pass transistor and the ambient cooling air. The worstcase situation occurs when the device has transitioned
from the preconditioning phase to the constant-current
phase. In this situation, the P-channel pass transistor
has to dissipate the maximum power. A trade-off must
be made between the charge current, cost and thermal
requirements of the charger.
6.1.1
External Pass Transistor
The external P-channel MOSFET is determined by the
gate-to-source threshold voltage, input voltage, output
voltage and fast charge current. Therefore, the
selected P-channel MOSFET must satisfy the thermal
and electrical design requirements.
Thermal Considerations
The worst-case power dissipation in the external pass
transistor occurs when the input voltage is at the
maximum and the device has transitioned from the
preconditioning phase to the constant-current phase. In
this case, the power dissipation is:
COMPONENT SELECTION
Selection of the external components in Figure 6-1 are
crucial to the integrity and reliability of the charging
system. The following discussion is intended to be a
guide for the component selection process.
6.1.1.1
6.1.1.2
Sense Resistor
The preferred fast charge current for Lithium-Ion cells
is at the 1C rate, with an absolute maximum current at
the 2C rate. For example, a 500 mAh battery pack has
a preferred fast charge current of 500 mA. Charging at
this rate provides the shortest charge cycle times
without degradation to the battery pack performance or
life.
The current sense resistor (RSENSE) is calculated by:
V FCS
RSENSE = -----------I REG
PowerDissipation =  V
DDMAX
–V
PTHMIN
I
REGMAX
Where:
VDDMAX is the maximum input voltage.
IREGMAX is the maximum fast charge current.
VPTHMIN is the minimum transition threshold voltage.
Power dissipation with a 5V, ±10% input voltage
source, 220 m, 1% sense resistor is:
PowerDissipation =  5.5V – 2.75V   551mA = 1.52W
Utilizing a Fairchild™ NDS8434 or an International
Rectifier IRF7404 mounted on a 1in2 pad of 2 oz.
copper, the junction temperature rise is 75°C,
approximately. This would allow for a maximum
operating ambient temperature of 75°C.
Where:
IREG is the desired fast charge current.
By increasing the size of the copper pad, a higher ambient temperature can be realized, or a lower value
sense resistor could be utilized.
For the 500 mAh battery pack example, a standard
value 220 m, 1% resistor provides a typical fast
charge current of 500 mA and a maximum fast charge
current of 551 mA. Worst-case power dissipation in the
sense resistor is:
Alternatively, different package options can be utilized
for more or less power dissipation. Again, design tradeoffs should be considered to minimize size while
maintaining the desired performance.
2
PowerDissipation = 220m  551mA = 66.8mW
A Panasonic® ERJ-6RQFR22V, 220 mW, 1%, 1/8W
resistor in a standard 0805 package is more than
sufficient for this application.
A larger value sense resistor will decrease the fast
charge current and power dissipation in both the sense
resistor and external pass transistor, but will increase
charge cycle times. Design trade-offs must be
considered to minimize space while maintaining the
desired performance.
Electrical Considerations
The gate-to-source threshold voltage and RDSON of the
external P-channel MOSFET must be considered in the
design phase.
The worst-case VGS provided by the controller occurs
when the input voltage is at the minimum and the fast
charge current regulation threshold is at the maximum.
The worst-case VGS is:
V GS = V DRVMAX –  V DDMIN – VFCSMAX 
Where:
VDRVMAX is the maximum sink voltage at the
VDRV output
VDDMIN is the minimum input voltage source
VFCSMAX is the maximum fast charge current
regulation threshold
DS21823D-page 16
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
Worst-case VGS with a 5V, ±10% input voltage source
and a maximum sink voltage of 1.0V is:
V GS = 1.0V –  4.5V – 120mV  = – 3.38V
At this worst-case (VGS) the RDSON of the MOSFET
must be low enough as to not impede the performance
of the charging system. The maximum allowable
RDSON at the worst-case VGS is:
VDDMIN – VFCSMAX – V BATMAX
RDSON = ------------------------------------------------------------------------------I REGMAX
4.5V – 120  115 mV – 4.221V = 288m
R DSON = -----------------------------------------------------------------------551  581 mA
The Fairchild NDS8434 and International Rectifier
IRF7404 both satisfy these requirements.
6.1.1.3
EXTERNAL CAPACITORS
The MCP7384X are stable with or without a battery
load. In order to maintain good AC stability in the
Constant-Voltage mode, a minimum capacitance of
4.7 µF is recommended to bypass the VBAT pin to VSS.
This capacitance provides compensation when there is
no battery load. Additionally, the battery and
interconnections appear inductive at high frequencies.
These elements are in the control feedback loop during
Constant-Voltage mode. Therefore, the bypass
capacitance may be necessary to compensate for the
inductive nature of the battery pack.
6.1.1.5
ENABLE INTERFACE
In the stand-alone configuration, the enable pin is
generally tied to the input voltage. The MCP7384X
automatically enters a Low-power mode when voltage
on the VDD input falls below the undervoltage lockout
voltage (VSTOP), reducing the battery drain current to
0.4 µA, typically.
6.1.1.6
CHARGE STATUS INTERFACE
A status output provides information on the state of
charge. The current-limited, open-drain output can be
used to illuminate an external LED. Refer to Table 5-1
for a summary of the state of the status output during a
charge cycle.
6.2
PCB Layout Issues
For optimum voltage regulation, place the battery pack
as close as possible to the device’s VBAT and VSS pins.
This is recommended to minimize voltage drops along
the high current-carrying PCB traces.
If the PCB layout is used as a heatsink, adding many
vias around the external pass transistor can help
conduct more heat to the back plane of the PCB, thus
reducing the maximum junction temperature.
Virtually any good quality output filter capacitor can be
used, independent of the capacitor’s minimum ESR
(Effective Series Resistance) value. The actual value of
the capacitor and its associated ESR depends on the
forward transconductance (gm) and capacitance of the
external pass transistor. A 4.7 µF tantalum or aluminum
electrolytic capacitor at the output is usually sufficient
to ensure stability for up to a 1A output current.
6.1.1.4
REVERSE-BLOCKING PROTECTION
The optional reverse-blocking protection diode,
depicted in Figure 6-1, provides protection from a
faulted or shorted input, or from a reversed-polarity
input source. Without the protection diode, a faulted or
shorted input would discharge the battery pack through
the body diode of the external pass transistor.
If a reverse-protection diode is incorporated into the
design, it should be chosen to handle the fast charge
current continuously at the maximum ambient
temperature. In addition, the reverse-leakage current
of the diode should be kept as small as possible.
 2003-2013 Microchip Technology Inc.
DS21823D-page 17
MCP73841/2/3/4
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
8-Lead MSOP (MCP73843, MCP73844)
Example:
738431
0319256
XXXXX
YWWNNN
10-Lead MSOP (MCP73841, MCP73842)
Example:
XXXXX
YYWWNNN
738411
0319256
Legend: XX...X
Y
YY
WW
NNN
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
e3
*
Note:
DS21823D-page 18
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1
α
A2
A
c
φ
A1
(F)
L
β
Units
Dimension Limits
n
p
MIN
INCHES
NOM
MAX
MILLIMETERS*
NOM
8
0.65 BSC
0.85
0.75
0.00
4.90 BSC
3.00 BSC
3.00 BSC
0.60
0.40
0.95 REF
0°
0.08
0.22
5°
5°
-
MIN
Number of Pins
8
Pitch
.026 BSC
Overall Height
A
.043
A2
Molded Package Thickness
.037
.030
.033
Standoff
A1
.006
.000
Overall Width
E
.193 TYP.
Molded Package Width
E1
.118 BSC
Overall Length
D
.118 BSC
Foot Length
L
.016
.024
.031
Footprint (Reference)
F
.037 REF
φ
0°
8°
Foot Angle
c
.003
.006
.009
Lead Thickness
.009
.012
.016
Lead Width
B
α
5°
15°
Mold Draft Angle Top
β
Mold Draft Angle Bottom
5°
15°
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
MAX
1.10
0.95
0.15
0.80
8°
0.23
0.40
15°
15°
JEDEC Equivalent: MO-187
Drawing No. C04-111
 2003-2013 Microchip Technology Inc.
DS21823D-page 19
MCP73841/2/3/4
10-Lead Plastic Micro Small Outline Package (UN) (MSOP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1
α
A
φ
c
A2
A1
L
(F)
β
L1
Units
Dimension Limits
n
p
MIN
INCHES
NOM
10
.020 TYP
.033
.193 BSC
.118 BSC
.118 BSC
.024
.037 REF
.009
-
MAX
MILLIMETERS*
NOM
10
0.50 TYP.
0.75
0.85
0.00
4.90 BSC
3.00 BSC
3.00 BSC
0.40
0.60
0.95 REF
0°
0.08
0.15
0.23
5°
5°
MIN
Number of Pins
Pitch
Overall Height
A
.043
Molded Package Thickness
.037
A2
.030
Standoff
.006
A1
.000
Overall Width
E
Molded Package Width
E1
Overall Length
D
.031
L
Foot Length
.016
Footprint
F
φ
0°
8°
Foot Angle
c
Lead Thickness
.003
.009
B
Lead Width
.006
.012
α
5°
15°
Mold Draft Angle Top
β
5°
15°
Mold Draft Angle Bottom
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
MAX
1.10
0.95
0.15
0.80
8°
0.23
0.30
15°
15°
JEDEC Equivalent: MO-187
Drawing No. C04-021
DS21823D-page 20
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
8.0
REVISION HISTORY
Revision D (January 2013)
Added a note to each package outline drawing.
 2003-2013 Microchip Technology Inc.
DS21823D-page 21
MCP73841/2/3/4
DS21823D-page 22
 2003-2013 Microchip Technology Inc.
MCP73841/2/3/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
XXX
X
XX
Device
Preset
Voltage
Options
Temperature
Range
Package
Device
MCP73841:
MCP73842:
MCP73842T:
MCP73843:
MCP73843T:
MCP73844:
MCP73844T:
410
420
820
840
Temperature Range
I
Package
MS
UN
a)
b)
c)
d)
MCP73841T:
Preset Voltage
Regulation Options
Examples:
=
=
=
=
Single-cell charge controller with temperature
monitor
Single-cell charge controller with temperature
monitor, Tape and Reel
Dual series cells charge controller with temperature monitor
Dual series cells charge controller with temperature monitor, Tape and Reel
Single-cell charge controller
Single-cell charge controller, Tape and Reel
Dual series cells charge controller
Dual series cells charge controller,
Tape and Reel
4.1V
4.2V
8.2V
8.4V
= -40C to +85C (Industrial)
a)
b)
c)
d)
a)
b)
c)
d)
a)
b)
c)
d)
MCP73841-410I/UN: 4.1V Preset Voltage
MCP73841T-410I/UN: 4.1V Preset Voltage,
Tape and Reel
MCP73841-420I/UN: 4.2V Preset Voltage
MCP73841T-420I/UN: 4.2V Preset Voltage,
Tape and Reel
MCP73842-820I/UN: 8.2V Preset Voltage
MCP73842T-820I/UN: 8.2V Preset Voltage,
Tape and Reel
MCP73842-840I/UN: 8.4V Preset Voltage
MCP73842T-840I/UN: 8.4V Preset Voltage,
Tape and Reel
MCP73843-410I/MS: 4.1V Preset Voltage
MCP73843T-410I/MS: 4.1V Preset Voltage,
Tape and Reel
MCP73843-420I/MS: 4.2V Preset Voltage
MCP73843T-420I/MS: 4.2V Preset Voltage,
Tape and Reel
MCP73844-820I/MS: 8.2V Preset Voltage
MCP73844T-820I/MS: 8.2V Preset Voltage,
Tape and Reel
MCP73844-840I/MS: 8.4V Preset Voltage
MCP73844T-840I/MS: 8.4V Preset Voltage,
Tape and Reel
= Plastic Micro Small Outline (MSOP), 8-lead
= Plastic Micro Small Outline (MSOP), 10-lead
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
Your local Microchip sales office
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2003-2013 Microchip Technology Inc.
DS21823D-page 23
MCP73841/2/3/4
NOTES:
DS21823D-page 24
 2003-2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2003-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620769027
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2003-2013 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21823D-page 25
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS21823D-page 26
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
11/29/12
 2003-2013 Microchip Technology Inc.