FDP8441 tm N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ Applications Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 215nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / Alternator Qualified to AEC Q101 Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 12V Systems AD FREE I M ENTATIO LE N MP LE Features ©2006 Fairchild Semiconductor Corporation FDP8441 Rev.A 1 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET September 2006 Symbol VDS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (TC < 160oC, VGS = 10V) 80 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) ID 23 Pulsed EAS PD TJ, TSTG A See Figure 4 Single Pulse Avalanche Energy (Note 1) 947 Power dissipation W 2 W/oC -55 to 175 oC Derate above 25oC Operating and Storage Temperature mJ 300 Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient (Note 2) 0.5 o 62 oC/W C/W Package Marking and Ordering Information Device Marking FDP8441 Device FDP8441 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - - V - 1 - - 250 ±100 nA V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V - - VDS = VGS, ID = 250µA 2 2.8 4 ID = 80A, VGS = 10V - 2.1 2.7 ID = 80A, VGS = 10V, TJ = 175°C - 3.6 4.7 - 15000 - pF - 1250 - pF - 685 - pF TJ = 150°C µA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.1 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 215 280 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 29 38 nC Qgs Gate to Source Gate Charge - 60 - nC Qgs2 Gate Charge Threshold to Plateau - 32 - nC Qgd Gate to Drain “Miller” Charge - 49 - nC FDP8441 Rev.A VDS = 25V, VGS = 0V, f = 1MHz 2 VDD = 20V ID = 35A Ig = 1mA www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 77 ns td(on) Turn-On Delay Time - 23 - ns tr Turn-On Rise Time - 24 - ns td(off) Turn-Off Delay Time - 75 - ns tf Turn-Off Fall Time - 17.9 - ns toff Turn-Off Time - - 147 ns V VDD = 20V, ID = 35A VGS = 10V, RGS = 1.5Ω Drain-Source Diode Characteristics ISD = 35A - 0.8 1.25 ISD = 15A - 0.8 1.0 V Reverse Recovery Time IF = 35A, di/dt = 100A/µs - 52 68 ns Reverse Recovery Charge IF = 35A, di/dt = 100A/µs - 76 99 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Starting TJ = 25oC, L = 0.46mH, IAS = 64A. 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDP8441 Rev.A 3 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 150 100 50 50 75 100 TC, CASE Figure 1. Normalized Power Dissipation vs Case Temperature VGS = 10V 200 0 25 175 CURRENT LIMITED BY PACKAGE 125 150 175 TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDP8441 Rev.A 4 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET Typical Characteristics 4000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) 500 10us If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 100 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 160 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 5V 120 o TJ = 175 C 80 TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 VGS = 10V VGS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 Figure 6. Unclamped Inductive Switching Capability 4.0 4.5 120 VGS = 4.5V 80 VGS = 4V 40 VGS = 3.5V 0 5.0 0 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 40 TJ = 25oC TJ = 175oC 20 10 0 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDP8441 Rev.A 2 3 4 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 30 1 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET Typical Characteristics 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250µA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 10 ID = 80A VDD = 15V 8 VDD = 25V 6 VDD = 20V 4 2 0 0 50 100 150 200 250 Qg, GATE CHARGE(nC) Figure 13. Capacitance vs Drain to Source Voltage FDP8441 Rev.A 1.05 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 40000 100 0.1 1.10 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 ID = 250µA Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET Typical Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 7 FDP8441 Rev.A www.fairchildsemi.com FDP8441 N-Channel PowerTrench® MOSFET TRADEMARKS