Freescale MRF1517T1 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF1517
Rev. 3, 5/2006
Replaced by MRF1517NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MRF1517T1
RF Power Field Effect Transistor
The MRF1517 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large - signal, common source
amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
D
Power Gain — 11 dB
Efficiency — 55%
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
G
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
• Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
S
520 MHz, 8 W, 7.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
VDSS
- 0.5, +25
Vdc
VGS
± 20
Vdc
ID
4
Adc
PD
62.5
0.50
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Value
Unit
RθJC
2
°C/W
Drain- Source Voltage
(1)
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
(2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFET
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
1. Not designed for 12.5 volt applications.
T
T
2. Calculated based on the formula PD = J – C
RθJC
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1517T1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 120 μAdc)
VGS(th)
1.0
1.7
2.1
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.5
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
0.9
—
—
S
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
66
—
pF
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
38
—
pF
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
6
—
pF
Common - Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps
10
11
—
dB
Drain Efficiency
(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η
50
55
—
%
Characteristic
Off Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
B2
VGG
C9
+
C7
C8
R3
B1
R2
R1
RF
INPUT
N1
Z1
Z2
B1, B2
C1
C2, C3, C4, C10,
C12, C13
C5, C11
C6, C18
C7, C15
C8, C16
C9, C17
C14
L1
N1, N2
2
Z4
Z5
C17
C3
C4
C16
+
C15
VDD
L1
C6
Z6
Z7
Z8
Z9
N2
Z10
DUT
C14
C10
C1
C2
MRF1517T1
Z3
C18
C11
C12
RF
OUTPUT
C13
C5
Short Ferrite Bead, Fair Rite Products
(2743021446)
300 pF, 100 mil Chip Capacitor
0 to 20 pF, Trimmer Capacitor
43 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
10 μF, 50 V Electrolytic Capacitor
0.1 μF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
330 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mount
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
ARCHIVE INFORMATION
ARCHIVE INFORMATION
On Characteristics
15 Ω, 0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.315″ x 0.080″ Microstrip
1.415″ x 0.080″ Microstrip
0.322″ x 0.080″ Microstrip
0.022″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.050″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
0.800″ x 0.080″ Microstrip
0.589″ x 0.080″ Microstrip
Glass Teflon®, 31 mils, 2 oz. Copper
Figure 1. 480 - 520 MHz Broadband Test Circuit
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS, 480 - 520 MHz
0
500 MHz
520 MHz
480 MHz
6
4
2
−5
−10
480 MHz
520 MHz
−15
500 MHz
−20
ARCHIVE INFORMATION
VDD = 7.5 Vdc
0
0
0.2
0.4
0.6
Pin, INPUT POWER (WATTS)
0.8
Figure 2. Output Power versus Input Power
VDD = 7.5 Vdc
1.0
−25
1
2
3
4
5
6
7
8
Pout, OUTPUT POWER (WATTS)
9
Figure 3. Input Return Loss versus
Output Power
10
ARCHIVE INFORMATION
8
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
10
MRF1517T1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 480 - 520 MHz
80
500 MHz
480 MHz
70
520 MHz
14
GAIN (dB)
Eff, DRAIN EFFICIENCY (%)
16
12
10
8
ARCHIVE INFORMATION
6
2
3
4
5
6
7
8
Pout, OUTPUT POWER (WATTS)
9
60
50
30
10
10
10
500 MHz
8
520 MHz
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
2
1
3
5
6
7
8
4
Pout, OUTPUT POWER (WATTS)
9
10
11
80
480 MHz
6
4
Pin = 27 dBm
VDD = 7.5 Vdc
2
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
500 MHz
60
520 MHz
50
40
30
1000
480 MHz
70
Figure 6. Output Power versus Biasing Current
Pin = 27 dBm
VDD = 7.5 Vdc
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
Figure 7. Drain Efficiency versus Biasing Current
12
80
10
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
VDD = 7.5 Vdc
Figure 5. Drain Efficiency versus Output Power
12
500 MHz
8
520 MHz
6
480 MHz
4
Pin = 27 dBm
IDQ = 150 mA
2
0
520 MHz
40
Figure 4. Gain versus Output Power
0
500 MHz
20
VDD = 7.5 Vdc
1
480 MHz
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
480 MHz
70
500 MHz
60
ARCHIVE INFORMATION
18
520 MHz
50
40
30
Pin = 27 dBm
IDQ = 150 mA
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1517T1
4
RF Device Data
Freescale Semiconductor
B2
C8
C7
+
C6
B1
R3
C17
R2
RF
INPUT
Z1
Z2
Z3
Z6
B1, B2
C1, C13
C2, C3, C4, C10,
C11, C12
C5, C17
C6, C14
C7, C15
C8, C16
C9
L1
N1, N2
C3
Z7
Z8
+
C14
N2
Z9
DUT
VDD
RF
OUTPUT
C13
C10
C1
C2
C9
C11
C12
C4
Short Ferrite Bead, Fair Rite Products
(2743021446)
300 pF, 100 mil Chip Capacitor
R1
R2
R3
Z1
Z2
Z3
Z4, Z5
Z6
Z7
Z8
Z9
Board
0 to 20 pF, Trimmer Capacitor
130 pF, 100 mil Chip Capacitor
10 μF, 50 V Electrolytic Capacitor
0.1 μF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
33 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mount
12 Ω, 0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.617″ x 0.080″ Microstrip
0.723″ x 0.080″ Microstrip
0.513″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.048″ x 0.080″ Microstrip
0.577″ x 0.080″ Microstrip
1.135″ x 0.080″ Microstrip
0.076″ x 0.080″ Microstrip
Glass Teflon®, 31 mils, 2 oz. Copper
Figure 10. 400 - 440 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 - 440 MHz
10
0
9
400 MHz
8
IRL, INPUT RETURN LOSS (dB)
Pout , OUTPUT POWER (WATTS)
ARCHIVE INFORMATION
Z5
Z4
C15
L1
C5
R1
N1
C16
ARCHIVE INFORMATION
VGG
420 MHz
7
6
440 MHz
5
4
3
2
1
0
VDD = 7.5 Vdc
0
0.1
0.2
0.3
Pin, INPUT POWER (WATTS)
0.4
0.5
Figure 11. Output Power versus Input Power
−5
400 MHz
−10
420 MHz
−15
440 MHz
−20
−25
VDD = 7.5 Vdc
1
2
3
4
5
6
7
Pout, OUTPUT POWER (WATTS)
8
9
10
Figure 12. Input Return Loss versus Output Power
MRF1517T1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS, 400 - 440 MHz
17
70
GAIN (dB)
Eff, DRAIN EFFICIENCY (%)
400 MHz
13
440 MHz
11
9
7
ARCHIVE INFORMATION
5
2
3
4
5
6
7
8
Pout, OUTPUT POWER (WATTS)
9
40
20
0
10
400 MHz
10
420 MHz
440 MHz
8
6
4
Pin = 25.5 dBm
VDD = 7.5 Vdc
2
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
1
2
3
5
6
7
8
4
Pout, OUTPUT POWER (WATTS)
9
10
11
80
70
440 MHz
60
420 MHz
400 MHz
50
40
30
1000
Figure 15. Output Power versus Biasing Current
Pin = 25.5 dBm
VDD = 7.5 Vdc
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
Figure 16. Drain Efficiency versus Biasing Current
12
80
10
420 MHz
400 MHz
8
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
VDD = 7.5 Vdc
Figure 14. Drain Efficiency versus Output Power
12
440 MHz
6
4
2
0
400 MHz
30
Figure 13. Gain versus Output Power
0
420 MHz
50
10
VDD = 7.5 Vdc
1
440 MHz
60
Pin = 25.5 dBm
IDQ = 150 mA
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus Supply Voltage
70
ARCHIVE INFORMATION
420 MHz
15
420 MHz
60
440 MHz
400 MHz
50
40
30
Pin = 25.5 dBm
IDQ = 150 mA
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus Supply Voltage
MRF1517T1
6
RF Device Data
Freescale Semiconductor
B2
C8
C7
+
C6
R3
B1
C16
C17
R2
RF
INPUT
N1
Z1
Z2
Z5
Z4
Z6
B1, B2
C3
Z8
N2
Z9
RF
OUTPUT
C13
C10
C9
C11
C12
C4
Short Ferrite Bead, Fair Rite Products
(2743021446)
240 pF, 100 mil Chip Capacitor
C1
C2, C3, C4, C10,
C11, C12
C5, C17
C6, C14
C7, C15
C8, C16
C9
C13
L1
N1, N2
Z7
DUT
C1
C2
R1
R2
R3
Z1
Z2
Z3
Z4, Z5
Z6
Z7
Z8
Z9
Board
0 to 20 pF, Trimmer Capacitor
130 pF, 100 mil Chip Capacitor
10 mF, 50 V Electrolytic Capacitor
0.1 mF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
39 pF, 100 mil Chip Capacitor
330 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mount
15 Ω, 0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.471″ x 0.080″ Microstrip
1.082″ x 0.080″ Microstrip
0.372″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.050″ x 0.080″ Microstrip
0.551″ x 0.080″ Microstrip
0.825″ x 0.080″ Microstrip
0.489″ x 0.080″ Microstrip
Glass Teflon®, 31 mils, 2 oz. Copper
Figure 19. 440 - 480 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 440 - 480 MHz
10
0
8
IRL, INPUT RETURN LOSS (dB)
9
Pout , OUTPUT POWER (WATTS)
ARCHIVE INFORMATION
Z3
VDD
+
C14
L1
C5
R1
C15
ARCHIVE INFORMATION
VGG
440 MHz
7
6
5
460 MHz
4
480 MHz
3
2
1
0
−5
−10
460 MHz
440 MHz
−15
480 MHz
−20
VDD = 7.5 Vdc
0.0
0.2
0.4
0.6
Pin, INPUT POWER (WATTS)
VDD = 7.5 Vdc
0.8
Figure 20. Output Power versus Input Power
−25
1
2
3
4
5
6
7
Pout, OUTPUT POWER (WATTS)
8
9
10
Figure 21. Input Return Loss versus Output Power
MRF1517T1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS, 440 - 480 MHz
17
70
Eff, DRAIN EFFICIENCY (%)
460 MHz
GAIN (dB)
13
480 MHz
11
9
7
ARCHIVE INFORMATION
5
2
3
6
7
8
4
5
Pout, OUTPUT POWER (WATTS)
30
20
9
0
10
440 MHz
10
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
1
2
3
5
6
7
8
4
Pout, OUTPUT POWER (WATTS)
9
10
11
80
480 MHz
8
460 MHz
6
4
2
Pin = 27.5 dBm
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
70
480 MHz
60
440 MHz
40
30
1000
460 MHz
50
Figure 24. Output Power versus Biasing Current
Pin = 27.5 dBm
0
200
400
600
IDQ, BIASING CURRENT (mA)
800
1000
Figure 25. Drain Efficiency versus Biasing Current
12
80
10
Eff, DRAIN EFFICIENCY (%)
Pout , OUTPUT POWER (WATTS)
VDD = 7.5 Vdc
Figure 23. Drain Efficiency versus Output Power
12
440 MHz
8
460 MHz
480 MHz
6
4
2
Pin = 27.5 dBm
0
440 MHz
40
Figure 22. Gain versus Output Power
0
480 MHz
50
10
VDD = 7.5 Vdc
1
460 MHz
60
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 26. Output Power versus Supply Voltage
70
ARCHIVE INFORMATION
440 MHz
15
480 MHz
60
460 MHz
440 MHz
50
40
30
Pin = 27.5 dBm
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 27. Drain Efficiency versus Supply Voltage
MRF1517T1
8
RF Device Data
Freescale Semiconductor
520
f = 440 MHz
Zin
f = 440 MHz
480
Zin
400
Zin
520
ZOL*
f = 480 MHz
ZOL*
f = 440 MHz
440
ZOL*
f = 480 MHz
400
Zin
Zo = 10 Ω
Zo = 10 Ω
Zo = 10 Ω
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
480
1.06 +j1.82
3.51 +j0.99
440
1.62 +j3.41
3.25 +j0.98
400
1.96 +j3.32
2.52 +j0.39
500
0.97 +j2.01
2.82 +j0.75
460
1.85 +j3.35
3.05 +j0.93
420
2.31 +j3.56
2.61 +j0.64
520
0.975 +j2.37 1.87 +j1.03
480
1.91 +j3.31
2.54 +j0.84
440
1.60 +j3.45
2.37 +j1.04
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
Zin
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
Zin
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 480 MHz
Z
*
OL
Figure 28. Series Equivalent Input and Output Impedance
MRF1517T1
RF Device Data
Freescale Semiconductor
9
Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc)
IDQ = 150 mA
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.84
- 152
17.66
97
0.016
0
0.77
- 167
100
0.84
- 164
8.86
85
0.016
5
0.78
- 172
200
0.86
- 170
4.17
72
0.015
-5
0.79
- 173
300
0.88
- 171
2.54
62
0.014
-8
0.80
- 172
400
0.90
- 172
1.72
55
0.013
- 25
0.83
- 172
500
0.92
- 172
1.28
50
0.013
- 10
0.84
- 172
600
0.94
- 173
0.98
46
0.014
- 22
0.86
- 171
700
0.95
- 173
0.76
41
0.010
- 30
0.86
- 172
800
0.96
- 174
0.61
38
0.011
- 14
0.86
- 171
900
0.96
- 175
0.50
33
0.011
- 31
0.85
- 172
1000
0.97
- 175
0.40
31
0.006
55
0.88
- 171
IDQ = 800 mA
f
MHz
MH
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.90
- 165
20.42
94
0.018
1
0.76
- 164
100
0.89
- 172
10.20
87
0.015
-7
0.77
- 170
200
0.90
- 175
4.96
79
0.015
- 12
0.77
- 172
300
0.90
- 176
3.17
73
0.017
-2
0.80
- 171
400
0.91
- 176
2.26
67
0.013
1
0.82
- 172
500
0.92
- 176
1.75
63
0.011
-6
0.83
- 171
600
0.93
- 176
1.39
59
0.012
- 31
0.85
- 171
700
0.94
- 176
1.14
55
0.015
- 34
0.88
- 171
800
0.94
- 176
0.93
51
0.008
- 22
0.87
- 171
900
0.95
- 177
0.78
45
0.007
2
0.87
- 172
1000
0.96
- 177
0.65
43
0.008
- 40
0.90
- 170
IDQ = 1.5 A
f
MH
MHz
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.92
- 165
19.90
95
0.017
3
0.76
- 164
100
0.90
- 172
9.93
88
0.018
2
0.77
- 170
200
0.91
- 176
4.84
80
0.016
-4
0.77
- 172
300
0.91
- 176
3.10
74
0.014
- 11
0.80
- 172
400
0.92
- 176
2.22
68
0.014
- 14
0.81
- 172
500
0.93
- 176
1.73
64
0.016
-8
0.83
- 171
600
0.94
- 176
1.39
61
0.013
- 24
0.85
- 171
700
0.94
- 176
1.12
56
0.013
- 24
0.87
- 171
800
0.95
- 176
0.93
52
0.009
- 12
0.87
- 171
900
0.96
- 177
0.78
46
0.008
10
0.87
- 173
1000
0.97
- 177
0.64
44
0.012
4
0.89
- 169
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f
MHz
MH
MRF1517T1
10
RF Device Data
Freescale Semiconductor
DESIGN CONSIDERATIONS
This device is a common - source, RF power, N - Channel
enhancement mode, Lateral Metal - Oxide Semiconductor
Field - Effect Transistor (MOSFET). Freescale Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate - to - drain (Cgd), and
gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
Drain
Cgd
Gate
Cds
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
Cgs
Source
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full - on condition. This on - resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The
drain - source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate - to - source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can
result in turn - on of the devices due to voltage build - up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate - to - source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate - drain capacitance. If the
gate - to - source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate - threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
APPLICATIONS INFORMATION
MRF1517T1
RF Device Data
Freescale Semiconductor
11
Large - signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.
Two - port stability analysis with this device’s
S - parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design
Using Two - Port Parameters” for a discussion of two port
network theory and stability.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
MOUNTING
The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Method for the PLD - 1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
MRF1517T1
12
RF Device Data
Freescale Semiconductor
NOTES
MRF1517T1
RF Device Data
Freescale Semiconductor
13
NOTES
MRF1517T1
14
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
R
0.115
2.92
0.115
2.92
L
0.020
0.51
4
0.35 (0.89) X 45_" 5 _
N
K
Q
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉÉÉ
C
4
ZONE W
1
2
3
S
G
ZONE X
VIEW Y - Y
mm
SOLDER FOOTPRINT
P
U
H
ZONE V
inches
10_DRAFT
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
CASE 466 - 03
ISSUE D
PLD- 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRF1517T1
RF Device Data
Freescale Semiconductor
15
How to Reach Us:
Home Page:
www.freescale.com
RoHS-compliant and/or Pb- free versions of Freescale products have the functionality
and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free
counterparts. For further information, see http://www.freescale.com or contact your
Freescale sales representative.
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
[email protected]
For information on Freescale.s Environmental Products program, go to
http://www.freescale.com/epp.
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MRF1517T1
Document Number: MRF1517
Rev. 3, 5/2006
16
RF Device Data
Freescale Semiconductor