Foshan BZT52B3V6S Zener diode in a sod-323 plastic package. Datasheet

BZT52BXXXS
Rev.F Mar.-2016
描述
/
DATA SHEET
Descriptions
SOD-323 塑封封装 稳压二极管。
Zener Diode in a SOD-323 Plastic Package.
特征
/ Features
200mW 功耗,中等电流,自动贴片组装。
200mW power dissipation, medium current, automated assembly processes.
用途
/
Applications
适用于 2.4V-39V 的宽范围稳压电路。
2.4V to 39V wide zener voltage range applications.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
1
2
PIN1:Cathode
放大及印章代码
PIN2:Anode
/ hFE Classifications & Marking
见电性能参数。See Electrical Characteristics.
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BZT52BXXXS
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极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Forward Voltage (Note 2) IF=10mA
VF
0.9
V
Power Dissipation(Note 1)
PD
200
mW
RθJA
625
℃/W
Tj,Tstg
-65~150
℃
Maximum Zener
Impedance (Note 3)
Maximum
Reverse
Current
Typical Thermal Resistance Junction
to Ambient(Note 1)
Junction and Storage Temperature
Range
电性能参数
Type
/ Electrical Characteristics(Ta=25℃)
Number
Zener Voltage Range
(Note 2)
Marking
Code
Vz @IZT
IZT
Nom
(V)
Min
(V)
Max (V)
mA
ZZK
@IZK
ZZT @IZT
Ω
IZK
IR
@VR
mA
μA
V
BZT52B2V4S
H0Z
2.4
2.35
2.45
5
94
564
1
45
1
BZT52B2V7S
H1Z
2.7
2.65
2.75
5
94
564
1
18
1
BZT52B3V0S
H2Z
3.0
2.94
3.06
5
89
564
1
9
1
BZT52B3V3S
H3Z
3.3
3.23
3.37
5
89
564
1
4.5
1
BZT52B3V6S
H4Z
3.6
3.53
3.67
5
84
564
1
4.5
1
BZT52B3V9S
H5Z
3.9
3.82
3.96
5
84
564
1
2.7
1
BZT52B4V3S
H6Z
4.3
4.21
4.39
5
84
564
1
2.7
1
BZT52B4V7S
H7Z
4.7
4.61
4.79
5
75
564
1
2.7
2
BZT52B5V1S
H8Z
5.1
5.00
5.20
5
56
470
1
1.8
2
BZT52B5V6S
H9Z
5.6
5.49
5.71
5
27
451
1
0.9
2
BZT52B6V2S
HAZ
6.2
6.08
6.32
5
9
376
1
2.7
4
BZT52B6V8S
HBZ
6.8
6.66
6.94
5
14
141
1
1.8
4
BZT52B7V5S
HCZ
7.5
7.35
7.65
5
14
75
1
0.9
5
BZT52B8V2S
HDZ
8.2
8.04
8.36
5
14
75
1
0.63
5
BZT52B9V1S
HEZ
9.1
8.92
9.28
5
14
94
1
0.45
6
BZT52B10S
HFZ
10
9.80
10.20
5
18
141
1
0.18
7
BZT52B11S
HGZ
11
10.78
11.22
5
18
141
1
0.09
8
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BZT52BXXXS
Rev.F Mar.-2016
电性能参数
DATA SHEET
/ Electrical Characteristics(Ta=25℃)
Zener Voltage Range
(Note 2)
Type
Number
Marking
Code
Vz @IZT
IZT
Nom
(V)
Min
(V)
Max (V)
mA
Maximum Zener
Impedance (Note 3)
ZZK
ZZT @IZT
IZK
@IZK
Ω
Maximum
Reverse Current
IR
@VR
mA
uA
V
BZT52B12S
HHZ
12
11.76
12.24
5
23
141
1
0.09
8
BZT52B13S
HJZ
13
12.74
13.26
5
28
160
1
0.045
8
BZT52B15S
HKZ
15
14.70
15.30
5
28
188
1
0.045
10.5
BZT52B16S
HLZ
16
15.68
16.32
5
37
188
1
0.045
11.2
BZT52B18S
HMZ
18
17.64
18.36
5
42
212
1
0.045
12.6
BZT52B20S
HNZ
20
19.60
20.40
5
51
212
1
0.045
14.0
BZT52B22S
HPZ
22
21.56
22.44
5
51
235
1
0.045
15.4
BZT52B24S
HRZ
24
23.52
24.48
5
65
235
1
0.045
16.8
BZT52B27S
HSZ
27
26.46
27.54
5
75
282
0.5
0.045
18.9
BZT52B30S
HTZ
30
29.40
30.60
5
75
282
0.5
0.045
21.0
BZT52B33S
HUZ
33
32.34
33.66
5
75
306
0.5
0.045
23.0
BZT52B36S
HVZ
36
35.28
36.72
5
84
329
0.5
0.045
25.2
BZT52B39S
HWZ
39
38.22
39.78
5
122
329
0.5
0.045
27.3
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
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BZT52BXXXS
Rev.F Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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BZT52BXXXS
Rev.F Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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BZT52BXXXS
Rev.F Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
H0Z
说明:
H: 
为公司代码
0Z: 
为型号代码
Note:
H:
Company Code.
0Z:
Product Type.
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BZT52BXXXS
Rev.F Mar.-2016
DATA SHEET
回流焊温度曲线图(无铅)
/
Temperature Profile for IR Reflow Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 245±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:245±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:260±5℃
包装规格
Time:10±1 sec
/ REEL
Package Type
封装形式
使用说明
Temp.:260±5℃
/ Packaging SPEC.
卷盘包装
SOD-323
时间:10±1 sec.
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Reel
只/卷盘
Reels/Inner Box
卷盘/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Reel
Inner Box 盒
Outer Box 箱
3,000
10
30,000
8
240,000
7〞×8
180×120×180
385×257×392
/ Notices
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