DGNJDZ MMBT7002 N-channel enhancement mode field effect transistor Datasheet

MMBT7002
N-Channel Enhancement Mode Field Effect Transistor
Features
• High density cell design for low RDS(ON)
• Voltage controlled small signal switching
• High saturation current capability
• High speed switching
Drain
Gate
1.Gate 2.Source 3.Drain
SOT-23 Plastic Package
Source
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS ≤ 1MΩ)
VDGR
60
V
VGSS
± 20
± 40
V
ID
115
800
mA
Ptot
200
mW
TJ, Ts
- 55 to + 150
Gate-Source Voltage
-Continuous
-Non Repetitive (tp < 50 µs)
Maximum Drain Current -Continuous
-Pulsed
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Drain Source Breakdown Voltage
at ID = 10 µA
Zero Gate Voltage Drain Current
at VDS = 60 V
Gate-Body Leakage Current
at VGS = ± 20 V
Gate Threshold Voltage
at VDS = VGS, ID = 250 µA
On-State Drain Current
at VGS = 10 V, VDS = 7.5 V
Drain-Source On-Voltage
at VGS = 10 V, ID = 500 mA
at VGS = 5 V, ID = 50 mA
Static Drain-Source On-Resistance
at VGS = 10 V, ID = 500 mA
Forward Transconductance
at VDS = 10 V, ID = 200 mA
Input Capacitance
at VDS = 25 V, f = 1 MHz
Output Capacitance
at VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
at VDS = 25 V, f = 1 MHz
Turn-On Time
at VDD = 30 V, RL= 150 Ω, ID = 0.2 A, VGS = 10V, RGEN = 25Ω
Turn-Off Time
at VDD = 30 V, RL= 150 Ω, ID = 0.2 A, VGS = 10V, RGEN = 25Ω
C
O
Symbol
Min.
Max.
Unit
BVDSS
60
-
V
IDSS
-
1
µA
±IGSS
-
100
nA
VGS(th)
1
2.5
V
ID(ON)
500
-
mA
VDS(ON)
-
3.75
1.5
V
V
RDS(ON)
-
7.5
Ω
gFS
80
-
mS
Ciss
-
50
pF
Coss
-
25
pF
Crss
-
5
pF
ton
-
20
ns
toff
-
20
ns
MMBT7002
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