MJW3281A (NPN) MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency • Gain Complementary: • • • • Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area − 1 A/100 V @ 1 Second High fT − 30 MHz Typical Pb−Free Packages are Available* http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 1 2 TO−247 CASE 340L 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 230 Vdc Collector−Base Voltage VCBO 230 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 230 Vdc IC 15 25 Adc Collector Current Collector Current − Continuous − Peak (Note 1) Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C − 65 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 0.625 °C/W Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. MARKING DIAGRAM MJWxxxxA AYWWG 1 BASE xxxx A Y WW G Device Package Shipping MJW3281A TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail MJW3281AG MJW1302AG © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 1 = 3281 or 1302 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION MJW1302A *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3 EMITTER 2 COLLECTOR Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJW3281A/D MJW3281A (NPN) MJW1302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 230 − − − − 50 − − 5 4 1 − − − − 50 50 50 50 50 45 12 125 − − − 115 − 35 200 200 200 200 200 − − − 0.4 2 − − 2 − 30 − − − 600 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 230 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 100 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob http://onsemi.com 2 pF MJW3281A (NPN) MJW1302A (PNP) TYPICAL CHARACTERISTICS NPN MJW3281A VCE = 10 V 40 5V 30 20 10 0 TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 60 f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) PNP MJW1302A 50 VCE = 10 V 50 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJW1302A NPN MJW3281A 1000 TJ = 100°C 25°C h FE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 25°C 100 TJ = 100°C 100 −25 °C 10 VCE = 20 V VCE = 20 V 0.1 −25 °C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 0.1 Figure 3. DC Current Gain, VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) PNP MJW1302A NPN MJW3281A 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 100 Figure 4. DC Current Gain, VCE = 20 V 1000 TJ = 100°C 25°C 100 −25 °C 10 10 TJ = 100°C 100 −25 °C VCE = 5 V VCE = 5 V 0.1 25°C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 0.1 Figure 5. DC Current Gain, VCE = 5 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 5 V http://onsemi.com 3 100 MJW3281A (NPN) MJW1302A (PNP) TYPICAL CHARACTERISTICS PNP MJW1302A NPN MJW3281A 45 45 1.5 A 35 30 1A 25 0.5 A 20 15 10 5.0 0 1A 30 0.5 A 25 20 15 10 5.0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 0 25 TJ = 25°C 0 Figure 7. Typical Output Characteristics PNP MJW1302A NPN MJW3281A 2.5 SATURATION VOLTAGE (VOLTS) 2.0 VBE(sat) 1.5 1.0 0.5 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 VCE(sat) VCE(sat) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0 100 PNP MJW1302A NPN MJW3281A TJ = 25°C VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0.1 100 TJ = 25°C VCE = 5 V (DASHED) VCE = 20 V (SOLID) 0.1 Figure 11. Typical Base−Emitter Voltage 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 12. Typical Base−Emitter Voltage http://onsemi.com 4 100 10 1.0 VCE = 20 V (SOLID) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages 10 1.0 0.1 Figure 9. Typical Saturation Voltages VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) TJ = 25°C IC/IB = 10 2.5 0.1 25 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics 3.0 0 IB = 2 A 35 TJ = 25°C 0 1.5 A 40 IB = 2 A IC , COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 40 100 MJW3281A (NPN) MJW1302A (PNP) PNP MJW1302A NPN MJW3281A 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 10 mSec 10 100 mSec 1 Sec 1.0 0.1 1.0 10 100 VCE, COLLECTOR EMITTER (VOLTS) 100 mSec 1 Sec 1.0 0.1 1000 10 mSec 10 1.0 Figure 13. Active Region Safe Operating Area 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 Figure 14. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 13 and 14 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TYPICAL CHARACTERISTICS PNP MJW1302A NPN MJW3281A 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 Cob 1000 1000 Cob TJ = 25°C ftest = 1 MHz 100 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 100 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW1302A Typical Capacitance Figure 16. MJW3281A Typical Capacitance http://onsemi.com 5 100 MJW3281A (NPN) MJW1302A (PNP) PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −T− C −B− E U L N 4 A 1 2 3 −Q− 0.63 (0.025) P M T B M −Y− K W J F 2 PL MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 2.20 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 20.06 20.83 5.40 6.20 4.32 5.49 −−− 4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.087 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.790 0.820 0.212 0.244 0.170 0.216 −−− 0.177 0.140 0.144 0.242 BSC 0.113 0.123 H G D 3 PL 0.25 (0.010) DIM A B C D E F G H J K L N P Q U W M Y Q S PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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