MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc... RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W - CDMA. The device is in a PFP - 16 flat pack package that provides excellent thermal performance through a solderable backside contact. Final Application • Typical Two - Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band Power Gain — 32 dB IMD — - 30 dBc Driver Application • Typical Single - Channel W - CDMA Performance: VDD = 27 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 32 dB ACPR — - 58 dBc • P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz • Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • Integrated ESD Protection • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MHVIC2114R2 2100 MHz, 27 V, 23 dBm SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER CASE 978 - 03 PFP - 16 PIN CONNECTIONS VGS3 VGS2 VGS1 Quiescent Current Temperature Compensation RFin IC VDS1 VDS2 VDS3/RFout 3 Stages IC N.C. 1 16 N.C. VGS3 2 15 VDS3/RFout VGS2 3 14 VDS3/RFout VGS1 4 13 VDS3/RFout RFin 5 12 VDS3/RFout RFin 6 11 VDS3/RFout VDS1 VDS2 7 8 10 9 VDS3/RFout N.C. (Top View) NOTE: Exposed backside flag is source terminal for transistors. Rev. 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MHVIC2114R2 1 Freescale Semiconductor, Inc. MAXIMUM RATINGS Symbol Value Unit Drain - Source Voltage Rating VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C Input Power Pin 5 dBm Symbol Value (1) Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Freescale Semiconductor, Inc... Driver Application (Pout = +0.2 W CW) RθJC °C/W Stage 1, 27 Vdc, IDQ1 = 96 mA Stage 2, 27 Vdc, IDQ2 = 204 mA Stage 3, 27 Vdc, IDQ3 = 111 mA 11.5 7.52 5.52 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) Charge Device Model C2 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22 - A113 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit W - CDMA CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 29 32 36 dB Gain Flatness GF — 0.3 0.5 dB Input Return Loss IRL — - 13 - 10 dB Adjacent Channel Power Ratio ACPR — - 60 - 57 dBc Group Delay Delay — 1.7 — ns — — 0.2 — ° Phase Linearity (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. MHVIC2114R2 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 1 16 VDS3 VGS3 + R3 2 C1 15 C17 C2 VGS2 3 + R2 C5 13 + C4 5 Z5 11 VDS1 C21 + C13 RF OUTPUT C9 6 VDS2 Z3 12 Z1 + C20 C15 Z2 C14 RF INPUT C19 Z4 4 R1 C18 + 14 C3 VGS1 Freescale Semiconductor, Inc... + Quiescent Current Temperature Compensation 7 + C8 C7 8 C11 C22 10 C6 + C12 C16 9 C10 Z1 Z2 Z3 Z4 Z5 PCB 0.323″ x .055″ 50 Ω Microstrip 0.196″ x .176″ Microstrip 0.286″ x .055″ Microstrip 0.150″ x .018″ Microstrip 0.363″ x .055″ Microstrip Arlon, 0.021″, εr = 2.55 Figure 1. MHVIC2114R2 Test Circuit Schematic Table 1. MHVIC2114R2 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C5, C8, C12, C14, C19 1 µF Tantalum Chip Capacitors TAJA105K035R Kemet C2, C3, C4, C7, C11, C18 0.01 µF Chip Capacitors 0805C103K5RACTR Vishay C6, C10, C17 6.8 pF Chip Capacitors (ACCU - P) AVX08051J6R8BBT AVX C9 1.5 pF Chip Capacitor (ACCU - P) AVX08051J1R5BBT AVX C15, C16 2.2 pF Chip Capacitors (ACCU - P) AVX08051J2R2BBT AVX C22 1.0 pF Chip Capacitor (ACCU - P) AVX08051J1R0BBT AVX C13, C20, C21 330 µF Electrolytic Capacitors MCR35V337M10X16 Multicomp R1, R2, R3 1 kW Chip Resistors (0805) P1.00KCCT - ND Panasonic MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2114R2 3 Freescale Semiconductor, Inc. VGS1 VGS2 R1 R2 R3 VGS3 C14 C5 C2 C1 C3 C4 C15 C22 C9 Freescale Semiconductor, Inc... C16 MHVIC2114R2 C6 Rev 1 C10 C17 C18 C19 C11 C12 C7 VDD2 C8 VDD3 VDD1 C21 C13 C20 Figure 2. MHVIC2114R2 Test Circuit Component Layout MHVIC2114R2 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 40 0 S21 30 2.2 2.1 −5 TC = 85_C 2.0 10 −15 S11 0 −20 −10 −25 S11 (dB) −10 DELAY, (nSEC) S21 (dB) 20 1.9 1.8 1.7 25_C 1.6 1.5 −30_C 1.4 −20 −30 VDD = 27 Vdc, Pout = 23 dBm CW 1.3 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA −30 −35 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 2110 2120 2130 2140 2150 2160 f, FEQUENCY (MHz) f, FREQUENCY (MHz) Figure 3. Broadband Frequency Response Figure 4. Delay versus Frequency 2170 2180 2170 2180 −18 36 TC = −30_C 32 25_C 28 85_C 24 VDD = 27 Vdc, Pout = 23 dBm CW 20 2100 2120 2130 2140 VDD = 27 Vdc, Pout = 23 dBm CW −17 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA −16 TC = 85_C −15 25_C −14 −13 −12 −30_C −11 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 1.2 2100 40 2150 2160 2170 2180 −10 2100 2110 2120 2130 2140 2150 2160 f, FREQUENCY (MHz) f, FREQUENCY, (MHz) Figure 5. Power Gain versus Frequency Figure 6. Input Return Loss versus Frequency 40 −10 38 36 −20 TC = −30_C 34 TC = −30_C 25_C 32 30 S21 PHASE(_) G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... VDD = 27 Vdc, Pout = 23 dBm CW 85_C 28 −30 25_C 40 26 24 85_C −50 VDD = 27 Vdc, f = 2140 MHz VDD = 27 Vdc, f = 2140 MHz 22 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 20 15 17.5 20 22.5 25 27.5 30 32.5 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA −60 35 37.5 40 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 7. Power Gain versus Output Power Figure 8. S21 Phase versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com 45 MHVIC2114R2 5 Freescale Semiconductor, Inc. IMD, INTERMODULATION DISTORTION (dBc) −30 VDD = 27 Vdc 3GPP Test Model 1 64 DPCH −35 −40 −45 2110 MHz −50 2170 MHz −55 2140 MHz −60 −65 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 −20 −30 VDD = 27 Vdc Pout = 23 dBm Two−Tone Avg. Tone Spacing = 100 kHz IDQ3 = 100 mA −40 111 mA 122 mA 3rd Order −50 122 mA −60 100 mA 111 mA −70 5th Order −80 −90 2000 2050 2100 2150 2200 2250 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 9. W - CDMA ACPR versus Output Power Figure 10. Two - Tone Intermodulation Distortion Products versus Frequency −10 −20 3rd Order −30 5th Order −40 −50 7th Order −60 VDD = 27 Vdc, f = 2140 MHz Pout = 7.5 W, Two−Tone Avg. IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA −80 0 10 20 30 40 50 60 70 80 90 100 110 7 6.75 6.5 6.25 6 5.75 5.5 5.25 5 4.75 4.5 4.25 4 3.75 3.5 3.25 3 −40 VBIAS1 VBIAS2 VDD = 27 Vdc, f = 2140 MHz R1 = R2 = R3 = 1000 Ohms VBIAS3 −20 0 TONE SPACING (MHz) 20 40 60 80 100 T, TEMPERATURE (C) Figure 11. Two - Tone Intermodulation Distortion Products versus Tone Spacing Figure 12. Fixture Bias versus Temperature 4.5 2 4.4 VGS, IC GATE BIAS VOLTAGE (V) 2300 IGS1 & IGS2 4.3 4.2 1.8 1.6 IGS, GATE BIAS CURRENT (A) −70 VBIAS, FIXTURE BIAS VOLTAGE (V) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... ACPR, ADJACENT CHANNEL POWER RATIO (dBc) TYPICAL CHARACTERISTICS 1.4 4.1 1.2 4 3.9 VGS3 VDD = 27 Vdc, f = 2140 MHz R1 = R2 = R3 = 1000 Ohms VGS1 & VGS2 1 0.8 3.8 0.6 3.7 0.4 3.6 IGS3 0.2 3.5 −40 −30 −20 −10 0 0 10 20 30 40 50 60 70 80 90 100 T, TEMPERATURE (C) Figure 13. Gate Bias versus Temperature MHVIC2114R2 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. f = 2170 MHz Zload f = 2110 MHz f = 2110 MHz Zin f = 2170 MHz Freescale Semiconductor, Inc... Zo = 50 Ω VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm Zin f MHz Zin Ω Zload Ω 2110 57.9 - j12.1 1.1 + j2.7 2140 50.6 - j18.9 1.1 + j3.4 2170 42.3 - j21.1 1.2 + j3.7 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 14. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHVIC2114R2 7 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 D e/2 D1 8 9 E1 8X M BOTTOM VIEW E C B S ÇÇ ÇÇ ÉÉ ÇÇ b1 Y c A A2 c1 b DATUM PLANE SEATING PLANE H C aaa M ccc C q W GAUGE PLANE W L A1 1.000 0.039 C A SECT W - W L1 Freescale Semiconductor, Inc... bbb B S NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC −−− 0.600 0_ 7_ 0.200 0.200 0.100 CASE 978 - 03 ISSUE B PFP- 16 DETAIL Y Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MHVIC2114R2 8 ◊ MHVIC2114R2/D MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com