Diode Semiconductor Korea BY396(Z)---BY399S(Z) VOLTAGE RANGE: 100--- 1000 V CURRENT: 3.0 A FAST RECOVERY RECTIFIERS FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol DO - 27 and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.041 ounces,1.15 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY 396 BY 397 BY 398 BY 399 BY 399S UNITS Maximum recurrent peak reverse voltage V RRM 100 200 400 800 1000 V Maximum RMS voltage V RMS 70 140 280 560 700 V Maximum DC blocking voltage VDC 100 200 400 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 3.0 A IFSM 100.0 A VF 1.25 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 10.0 IR Maximum reverse recovery time (Note1) t rr Typical junction capacitance (Note2) CJ 32 Typical thermal resistance (Note3) RθJA 22 TJ - 55---- +150 TSTG - 55---- +150 Operating junction temperature range Storage temperature range A 200.0 250 150 ns pF ／Ｗ NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BY396(Z)---BY399S(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. ( - ) 0 (+) 50VDC (APPROX) (-) PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A 1cm NOTES:1.RISE TIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O SET TIMEBASE FOR 50/100 ns /cm 100 10 4 2 1.0 0.4 0.2 0.1 0.06 0.04 TJ =25 Pulse Width=300 µS 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 --TYPICAL FORWARD CHARACTERISTIC 3 2.5 Single Phase Half Wave 60H Z Resistive or Inductive Load 2 1.5 1 0.5 0 25 50 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 40 20 10 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE,VOLTS 40 100 150 125 175 200 FIG.5--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF 60 100 AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE 100 75 160 140 T J=125 8.3ms Single Half Sine-Wave 120 100 80 60 40 20 0 1 2 4 8 10 20 40 60 80 10 0 NUMBER OF CYCLES AT 60 Hz www.diode.kr