DSK BY397 Fast recovery rectifier Datasheet

Diode Semiconductor Korea BY396(Z)---BY399S(Z)
VOLTAGE RANGE: 100--- 1000 V
CURRENT: 3.0 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
DO - 27
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces,1.15 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BY
396
BY
397
BY
398
BY
399
BY
399S
UNITS
Maximum recurrent peak reverse voltage
V RRM
100
200
400
800
1000
V
Maximum RMS voltage
V RMS
70
140
280
560
700
V
Maximum DC blocking voltage
VDC
100
200
400
800
1000
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
3.0
A
IFSM
100.0
A
VF
1.25
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA =100
10.0
IR
Maximum reverse recovery time (Note1)
t rr
Typical junction capacitance
(Note2)
CJ
32
Typical thermal resistance
(Note3)
RθJA
22
TJ
- 55---- +150
TSTG
- 55---- +150
Operating junction temperature range
Storage temperature range
A
200.0
250
150
ns
pF
/W
NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BY396(Z)---BY399S(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
50
N.1.
10
N.1.
+0.5A
D.U.T.
( - )
0
(+)
50VDC
(APPROX)
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
1cm
NOTES:1.RISE TIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
SET TIMEBASE FOR 50/100 ns /cm
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
TJ =25
Pulse Width=300 µS
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
3
2.5
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
2
1.5
1
0.5
0
25
50
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
40
20
10
4
TJ=25
f=1MHz
2
1
.1
.2
.4
1.0 2
4
10
20
REVERSE VOLTAGE,VOLTS
40
100
150
125
175
200
FIG.5--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
60
100
AMBIENT TEMPERATURE,
FIG.4--TYPICAL JUNCTION CAPACITANCE
100
75
160
140
T J=125
8.3ms Single Half
Sine-Wave
120
100
80
60
40
20
0
1
2
4
8 10
20
40
60 80 10 0
NUMBER OF CYCLES AT 60 Hz
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