ETC2 FS0101DB Sensitive gate scr Datasheet

FS01...A/B
SENSITIVE GATE SCR
TO92
(Plastic)
RD26
(Plastic)
On-State Current
Gate Trigger Current
0.8 Amp
< 200 µA
Off-State Voltage
200 V ÷ 600 V
K
G
A
A
G
K
FS01...A
FS01...B
This series of Silicon Controlled R ectifiers
uses a high performance
PNPN technology.
This part is intended for general purpose
applications where high gate sensitivity is
required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
IT(RMS)
IT(AV)
ITSM
ITSM
I2t
VGRM
IGM
PGM
PG(AV)
Tj
Tstg
Tsld
SYMBOL
VDRM
VRRM
PARAMETER
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
PARAMETER
Repetitive Peak Off State
Voltage
CONDITIONS
Min.
All Conduction Angle, TL = 60 ºC
Half Cycle, Θ = 180 º, TL = 60 ºC
Half Cycle, 60 Hz, Tj = 25 ºC
Half Cycle, 50 Hz, Tj = 25º C
t = 10ms, Half Cycle
IGR = 10 µA
20 µs max.
20 µs max.
20ms max.
1.6 mm from case, 10s max.
Tj = -40 to +125 ºC, RGK = 1 KΩ
Unit
1
2
0.1
+125
+150
260
A
A
A
A
A2s
V
A
W
W
ºC
ºC
ºC
0.8
0.5
8
7
0.24
8
-40
-40
CONDITIONS
Max.
VOLTAGE
B
200
D
400
Unit
M
600
V
Feb - 01
FS01...A/B
SENSITIVE GATE SCR
Electrical Characteristics
SYMBOL
IGT
PARAMETER
CONDITIONS
Gate Trigger Current
SENSITIVITY
MIN
MAX
VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX
VR = VRRM ,
Tj = 25 ºC MAX
at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX
Tj = 125 ºC
MAX
Tj = 125 ºC
MAX
VD = 12 VDC , RL = 140Ω, Tj = 25 ºC
MAX
MAX
IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC
IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC
MAX
MIN
VD = 0.67 x VDRM , RGK = 1KΩ,
Tj = 125 ºC
VD = 12 VDC , RL = 140Ω, Tj = 25 ºC
IDRM / IRRM
Off-State Leakage Current
VTM
VT(TO)
rT
VGT
IH
IL
dv / dt
On-state Voltage
On-state Threshold Voltage
On-state slope Resistance
Gate Trigger Voltage
Holding Current
Latching Current
di / dt
tgd
Critical Rate of Current Rise IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 125 ºC
Gate Controlled Delay Time IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 25 ºC
ITM = 3x IT(AV) VD = VDRM
tq
Commutated Turn-Off Time
Rth(j-l)
Rth(j-a)
01
1
20
Unit
02
µA
200
100
1
1.93
0.95
600
0.8
µA
5
6
75
V
V
mΩ
V
mA
mA
V/µs
MIN
TYP
30
500
A/µs
ns
MAX
200
µs
Thermal Resistance
Junction-Leads for DC
80
ºC/W
Thermal Resistance
Junction-Ambient
150
ºC/W
Critical Rate of Voltage
Rise
ITM = 3x IT(AV) VR = 35 V
di/dt = 10 A/µs tp = 100 µs
dv/dt = 10 V/µs Tj = 125 ºC
VD = 67% VDRM RGK = 1KΩ
PART NUMBER INFORMATION
F
S
01
02
B
A
FAGOR
PACKAGE: A: TO92
B: RD26
SCR
VOLTAGE
CURRENT
SENSITIVITY
Feb - 01
FS01...A/B
SENSITIVE GATE SCR
Fig. 1: Maximum average power dissipation
versus average on-state current
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and T lead).
P (W)
T lead (ºC)
-45
P (W)
1
1
360 º
Rth (j-l)
0.8
0.8
α
0.6
α = 180 º
-65
Rth (j-a)
DC
0.6
-85
α = 120 º
0.4
0.4
α = 90 º
α = 60 º
0.2
-105
0.2
IT(AV)(A)
α = 30 º
0
Tamb (ºC)
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Fig. 3: Average on-state current versus lead
temperature
0
20
40
60
80
-125
100 120 140
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
I T(AV) (A)
Zth(j-a) / Rth(j-a)
1
1.00
DC
0.8
0.6
0.10
α = 180 º
0.4
0.2
tp (s)
T lead (ºC)
0
0
20
40
60
80
100 120 140
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Igt (Tj)
Ih (Tj)
Igt (Tj = 25 ºC)
Ih (Tj = 25 ºC)
10.0
0.01
1E-3
1E-2
1E-1
1E+0
1E+1 1E+2 5E+2
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
I TSM (A)
8
Tj initial = 25 ºC
9.0
7
8.0
6
7.0
5
6.0
Igt
5.0
4
4.0
3
3.0
2.0
2
Ih
1
1.0
Number of cycles
Tj (ºC)
0
0.0
-40 -20 0
20 40 60 80 100 120 140
1
10
100
1,000
Feb - 01
FS01...A/B
SENSITIVE GATE SCR
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp ≤ 10 ms, and corresponding value of I2t.
Fig. 8: On-state characteristics (maximum
values).
ITSM(A). I2t (A2s)
Fig. 9: Relative variation of holding
current versus gate-cathode resistance
(typical values).
Ih(Rgk)
Ih(Rgk = 1kΩ)
ITM(A)
10
100
5.0
Tj = 25 ºC
Tj initial = 25 ºC
Tj initial
25 ºC
ITSM
Tj max
10
1.0
1
Tj max
Vto = 0.95 V
Rt = 0.600Ω
1
I2 t
VTM(V)
tp(ms)
0.1
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
PACKAGE MECHANICAL DATA
Rgk (Ω)
0.1
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
TO92 (Plastic)
Min.
4.55
2.42
1.15
4.55
12.7
3.55
0.38
0.33
DIMENSIONS
Milimeters
Typ.
1.5
4.6
2.54
1.27
4.6
14.1
3.6
1.5
0.43
0.38
Max.
4.65
2.66
1.39
4.65
15.5
3.65
0.48
0.43
Min.
4.55
2.42
1.15
4.55
12.7
3.55
0.38
0.33
DIMENSIONS
Millimeters
Typ.
1.5
4.6
2.54
1.27
4.6
14.1
3.6
0.43
0.38
Max.
4.65
2.66
1.39
4.65
15.5
3.65
0.48
0.43
REF.
A
C
H
a
D
B
b
E
F
G
A
B
C
D
E
F
G
H
a
b
Marking: type number
Weight: 0.2 g
PACKAGE MECHANICAL DATA
RD26 (Plastic)
C
REF.
D
A
G
a
B
b
45º
E
F
A
B
C
D
E
F
G
a
b
Marking: type number
Weight: 0.2 g
Feb - 01
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