isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFPC42R FEATURES ·Drain Current –ID= 5.9A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 5.9 A IDM Drain Current-Single Pluse 24 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro MAX UNIT 0.83 ℃/W 40 ℃/W 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFPC42R ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance IGSS MIN MAX UNIT 600 2 V 4 V VGS= 10V; ID= 3,.7A 1.6 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 VDS= 480V; VGS= 0; Tj= 150℃ 250 1000 μA VSD Forward On-Voltage IS= 6.2A; VGS= 0 1.5 V · isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn