MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD (7 TYP.) P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5 V F H AB P GuP P GvP EuP GwP EvP GuN EwP GvN EuN EvN U N GwN EwN W V N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.02±0.02 102±0.5 Dimensions P Inches 0.65 Millimeters 16.5 B 3.58±0.02 91.0±0.5 Q 0.55 14.0 C 3.15±0.01 80.0±0.25 R 0.47 12.0 D 2.913±0.01 74.0±0.25 S 0.43 11.0 E 1.69 T 0.39 10.0 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies F 1.18+0.06/-0.02 U 0.33 8.5 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75TF-12H is a 600V (VCES), 75 Ampere Six-IGBT Module. G 1.18 30.0 V 0.32 8.1 Type H 1.16 29.5 X 0.24 6.0 J 1.06 27.0 Y 0.22 Dia. Dia. 5.5 K 0.96 24.5 Z M4 Metric L 0.87 22.0 AA 0.08 2.0 M 0.79 20.0 AB 0.28 7.0 N 0.67 17.0 43.0 30.0+1.5/-0.5 CM Current Rating Amperes VCES Volts (x 50) 75 12 M4 Sep.1998 MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM75TF-12H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 310 Watts Mounting Torque, M4 Main Terminal – 0.98 ~ 1.47 N·m Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N·m Weight – 540 Grams Viso 2500 Vrms Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 1.0 mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 75A, VGE = 15V – 2.1 2.8** Volts IC = 75A, VGE = 15V, Tj = 150°C – 2.15 – Volts Total Gate Charge QG VCC = 300V, IC = 75A, VGE = 15V – 225 Emitter-Collector Voltage VEC IE = 75A, VGE = 0V – – – 2.8 nC Min. Typ. Max. Units – – 7.5 nF – – 2.6 nF – – 1.5 nF Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V – – 120 ns tr VCC = 300V, IC = 75A, – – 300 ns td(off) VGE1 = VGE2 = 15V, RG = 8.3Ω – – 200 ns – – 300 ns 110 ns – µC tf Diode Reverse Recovery Time trr IE = 75A, diE/dt = –150A/µs – – Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = –150A/µs – 0.20 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – Max. 0.40 Units °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.90 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.033 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE 150 VGE = 20V 15 100 11 10 50 9 7 VCE = 10V Tj = 25°C Tj = 125°C 100 50 8 0 0 0 2 4 6 8 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 0 IC = 150A 6 IC = 75A 4 2 101 102 101 Cies Coes 100 IC = 30A 16 0 20 2.4 3.2 4.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) tf td(off) td(on) 101 1.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 103 102 0.8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) tr di/dt = -150A/µsec Tj = 25oC 101 t rr Irr 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 102 20 IC = 75A GATE-EMITTER VOLTAGE, VGE, (VOLTS) 12 10-1 10-1 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 Cres VGE = 0V 100 0 VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 125°C 150 CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 8 4 100 Tj = 25°C Tj = 25°C 0 50 COLLECTOR-CURRENT, IC, (AMPERES) 103 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 16 VCC = 200V 12 VCC = 300V 8 4 0 0 50 100 150 200 250 300 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM75TF-12H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.4°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.9°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998