ANADIGICS AWU6601RM45P9 Help3tm band 1 / wcdma / td-scdma 3.4 v / 28.25 dbm linear pa module Datasheet

AWU6601
HELP3 Band 1 / WCDMA / TD-SCDMA
3.4 V / 28.25 dBm Linear PA Module
TM
Data Sheet - Rev 2.0
FEATURES
•
HSPA Compliant
•
InGaP HBT Technology
•
Low Quiescent Current with only 2 Bias Modes
•
Simpler Calibration
•
Low Leakage Current in Shutdown Mode: <1 µA
•
Internal Voltage Regulator
•
Integrated “daisy chainable” directional couplers
with CPLIN and CPLOUT Ports
•
Optimized for a 50 Ω System
•
Low Profile Miniature Surface Mount Package
•
RoHS Compliant Package, 260 oC MSL-3
AWU6601
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
WCDMA/HSPA Mode
•
High Efficiency: (R99 waveform)
40 % @ POUT = +28.25 dBm
25 % @ POUT = +17 dBm
Low Quiescent Current: 8 mA
and standby time. The self-contained 3 mm x 3 mm x
1 mm surface mount package incorporates matching
networks optimized for output power, efficiency, and
linearity in a 50 Ω system.
TD-SCDMA Mode
36 % @ POUT = +27 dBm
20 % @ POUT = +16 dBm
APPLICATIONS
•
Wireless Handsets and Data Devices for
•
WCDMA/HSPA IMT-Band
•
TD-SCDMA 1.8/2.0 GHz Band
GND at Slug (pad)
PRODUCT DESCRIPTION
The AWU6601 HELP3 PA is a 3rd generation
WCDMA product for UMTS handsets. This PA
incorporates ANADIGICS’ HELP3TM technology to
provide low power consumption without the need
for an external voltage regulator. A “daisy chainable”
directional coupler is integrated in the module thus
eliminating the need of external couplers. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. There are two
selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, which increases handset talk
VBATT
1
RFIN
2
VMODE2 (N/C)
3
VMODE1
VEN
10
VCC
TM
10/2009
9
RFOUT
8
CPLIN
4
7
GND
5
6
CPLOUT
CPL
Bias Control
Voltage Regulation
Figure 1: Block Diagram
AWU6601
VBATT
1
10
RFIN
2
9
RFOUT
VMODE2 (N/C)
3
8
CPLIN
VMODE1
4
7
GND
VEN
5
6
CPLOUT
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
NAME
DESCRIPTION
1
VBATT
Battery Voltage
2
RFIN
RF Input
3
2
VMODE2 (N/C) No Connection
4
VMODE1
5
VEN
6
CPLOUT
7
GND
Ground
8
CPLIN
Coupler Input
9
RFOUT
RF Output
10
VCC
Mode Control Voltage 1
PA Enable Voltage
Coupler Output
Supply Voltage
Data Sheet - Rev 2.0
10/2009
VCC
AWU6601
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC)
0
+5
V
Battery Voltage (VBATT)
0
+6
V
Control Voltages (VMODE1, VENABLE)
0
+3.5
V
RF Input Power (PIN)
-
+10
dBm
-40
+150
°C
Storage Temperature (TSTG)
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (f)
1920
1880
2010
-
1980
1920
2025
MHz
Supply Voltage (VCC)
+3.2
+3.4
+4.2
V
POUT < +28.25 dBm
Enable Voltage (VENABLE)
+2.15
0
+2.4
0
+3.1
+0.5
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE1)
+2.15
0
+2.4
0
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
27.75(1)
26.75(1)
16.5(1)
15.5(1)
28.25
27.25
17
16
28.25
27.25
17
16
dBm
3GPP TS 34.121-1, Rel 8
Table C.11.1.3, Subtest 1
RF Output Power (POUT), TD-SCDMA
TD-SCDMA (HPM)
TD-SCDMA (LPM)
26.5
15.5
27
16.0
27
16.0
dBm
3GPP TS 25.62
Section 6.2.1
Case Temperature (TC)
-30
-
+90
°C
RF Output Power (POUT)
R99 WCDMA, HPM
HSPA (MPR=0), HPM
R99 WCDMA, LPM
HSPA (MPR=0), LPM
COMMENTS
UMTS Band 1
TD-SCDMA Band
TD-SCDMA Band
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at Vcc = +3.2 V, Pout is derated by 0.5 dB.
Data Sheet - Rev 2.0
10/2009
3
AWU6601
Table 4: Electrical Specifications - UMTS/WCDMA Mode
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +2.4 V, 50 Ω system, R99 waveform)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
24.5
11.5
26.5
13.5
29
16.5
dB
-
-41
-42
-38
-38
-
-55
-55
-48
-48
36
21
40
25
Quiescent Current (Icq)
Low Bias Mode
-
Mode Control Current
COMMENTS
POUT
VMODE1
+28.25 dBm
+17 dBm
0V
2.4 V
+28.25 dBm
+17 dBm
0V
2.4 V
dBc
+28.25 dBm
+17 dBm
0V
2.4 V
-
%
+28.25 dBm
+17 dBm
0V
2.4 V
8
12
mA
VMODE1 = +2.4 V
-
0.3
0.6
mA
through VMODE pin, VMODE1 = +2.4 V
Enable Current
-
0.3
0.6
mA
through VENABLE pin
BATT Current
-
3.0
5
mA
through VBATT pin, VMODE1 = +2.4 V
Leakage Current
-
<1
5
µA
VBATT = +4.2 V, VCC = +4.2 V,
VENABLE = 0 V, VMODE1 = 0 V
-
-137
-135
dBm/Hz POUT < +28.25 dBm, VMODE1 = 0V
-
-143
-138
dBm/Hz POUT < 17 dBm, VMODE1 = +2.4 V
Harmonics
2fo
3fo, 4fo
-
-42
-50
-35
-35
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
-
19.5
-
dB
Directivity
-
20
-
dB
ACLR1 at 5 MHz offset (1)
ACLR2 at 10 MHz offset
Power-Added Efficiency (1)
Noise in Receive Band(2)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
dBc
-
-
-70
dBc
POUT < +28.25 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating
conditions
8:1
-
-
VSWR
Applies over full operating range
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
(2) Noise measured at 2110 MHz to 2170 MHz.
4
POUT < +28.25 dBm
Data Sheet - Rev 2.0
10/2009
AWU6601
Table 5: Electrical Specifications - TD-SCDMA Mode
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +2.4 V, 50 Ω system)
COMMENTS
PARAMETER
MIN
TYP
MAX
UNIT
Gain
24
11.5
27
13.5
-
dB
+27 dBm
+16 dBm
0V
2.4 V
ACLR1 at 1.6 MHz offset
-
-42
-42
-38
-38
dBc
+27 dBm
+16 dBm
0V
2.4 V
ACLR2 at 3.2 MHz offset
-
-55
-55
-48
-48
dBc
+27 dBm
+16 dBm
0V
2.4 V
33
18
36
20
-
%
+27 dBm
+16 dBm
0V
2.4 V
Quiescent Current (Icq)
Low Bias Mode
-
8
12
mA
VMODE1 = +2.4 V
Mode Control Current
-
0.3
0.6
mA
through VMODE pin, VMODE1 = +2.4 V
Enable Current
-
0.3
0.6
mA
through VENABLE pin, VEN = +2.4 V
BATT Current
-
3.0
5
mA
through VBATT pin, VMODE1 = +2.4 V
Leakage Current
-
<1
5
µA
VBATT = +4.3 V, VCC = +4.3 V,
VENABLE = 0 V, VMODE1 = 0 V
Harmonics
2fo
3fo, 4fo
-
-
-35
-35
dBc
Input Impedance
-
-
2:1
VSWR
8:1
-
-
VSWR
Power-Added Efficiency
(without DC/DC Converter)
Load mismatch stress with no
permanent degradation or failure
Data Sheet - Rev 2.0
10/2009
POUT
VMODE1
POUT < +27 dBm
Applies over full operating range
5
AWU6601
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VENABLE and VMODE1 voltages.
Bias Modes
The power amplifier may be placed in either a Low Bias
mode or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to VMODE1.
The Bias Control table lists the recommended modes
of operation for various applications. VMODE2 is not
necessary for this PA.
Two operating modes are available to optimize
current consumption. High Bias/High Power operating
mode is for POUT levels > 16 dBm. At around 17 dBm
output power, the PA should be “Mode Switched” to
Medium/Low power mode for lowest quiescent current
consumption.
Table 6: Bias Control (WCDMA/UMTS)
POUT
LEVELS
BIAS MODE
VENABLE
VMODE1
VCC
VBATT
UMTS - high power
(High Bias Mode)
> +16 dBm
High
+2.4 V
0V
3.2 - 4.2 V
> 3.2 V
UMTS - med/low power
(Low Bias Mode)
< +17 dBm
Low
+2.4 V
+2.4 V
3.2 - 4.2 V
> 3.2 V
Optional lower VCC in low
power mode
< +7 dBm
Low
+2.4 V
+2.4 V
1.5 V
> 3.2 V
-
Shutdown
0V
0V
3.2 - 4.2 V
> 3.2 V
APPLICATION
Shutdown
Table 7: Bias Control (TD-SCDMA)
POUT
LEVELS
BIAS MODE
VENABLE
VMODE1
VCC
VBATT
TD-SCDMA - high power
(High Bias Mode)
> +15 dBm
High
+2.4 V
0V
3.2 - 4.2 V
> 3.2 V
TD-SCDMA - med/low
power (Low Bias Mode)
< +16 dBm
Low
+2.4 V
+2.4 V
3.2 - 4.2 V
> 3.2 V
-
Shutdown
0V
0V
3.2 - 4.2 V
> 3.2 V
APPLICATION
Shutdown
6
Data Sheet - Rev 2.0
10/2009
AWU6601
CHARACTERIZATION DATA
(WCDMA Rel 99, VCC = 3.4 V, VEN = 2.4 V, T = 25 8C)
Figure 4: Current vs Output Power
Figure 3: Gain vs Output Power
550
30
500
25
400
Current (mA)
Gain (dB)
1920MHz
1950MHz
1980MHz
450
1920MHz
1950MHz
1980MHz
20
15
10
350
300
250
200
150
100
5
50
0
0
-10
-5
0
5
10
15
20
25
-10
30
-5
0
5
15
20
25
30
Figure 6: ACLR2 (10 MHz offset) vs Output
Figure 5: ACLR1 (5 MHz offset) vs Output Power
-40
-30
-45
-35
1920MHz
1950MHz
1980MHz
-45
1920MHz
1950MHz
1980MHz
-50
ACLR2 (dBc)
-40
ACLR1 (dBc)
10
Pout (dBm)
Pout (dBm)
-50
-55
-55
-60
-65
-60
-70
-65
-75
-80
-70
-10
-5
0
5
10
15
20
25
30
-10
-5
0
5
10
15
20
25
30
Pout (dBm)
Pout (dBm)
Figure 7: Efficiency vs Output Power
45
40
35
1920MHz
1950MHz
1980MHz
PAE (%)
30
25
20
15
10
5
0
-10
-5
0
5
10
15
20
25
30
Pout (dBm)
Data Sheet - Rev 2.0
10/2009
7
AWU6601
CHARACTERIZATION DATA
(HSPA, Rel 8, VCC = 3.4 V, VEN = 2.4 V, T = 25 8C)
Figure 8: Gain vs Output Power
Figure 9: Current vs Output Power
30
550
500
25
450
350
Current (mA)
Gain (dB)
20
1920MHz
1950MHz
1980MHz
400
1920MHz
1950MHz
1980MHz
300
15
250
200
10
150
100
5
50
0
0
-10
-5
0
5
10
15
20
25
-10
30
-5
0
5
15
20
25
30
Figure 11: ACLR2 (10MHz offset) vs Output
Figure 10: ACLR1 (5MHz offset) vs Output Power
-40
-30
-45
-35
1920MHz
1950MHz
1980MHz
1920MHz
1950MHz
1980MHz
-50
ACLR2 (dBc)
ACLR1 (dBc)
-40
-55
-45
-60
-50
-65
-55
-70
-60
-75
-65
-10
-5
0
5
10
Pout (dBm)
15
20
25
30
-80
-10
Figure 12: Efficiency vs Output Power
40
35
30
1920MHz
1950MHz
1980MHz
PAE (%)
25
20
15
10
5
0
-10
8
10
Pout (dBm)
Pout (dBm)
-5
0
5
10
Pout (dBm)
15
20
25
30
Data Sheet - Rev 2.0
10/2009
-5
0
5
10
Pout (dBm)
15
20
25
30
AWU6601
VBATT
VCC
C1
33 pF
C2
0.1 µF
GND at slug
1
2
RFIN
VMODE1
VEN
10
VBATT
VCC
RFIN
RFOUT
C3
2.2 µFceramic
9
3
VMODE2 (N/C) CPLIN
8
4
VMODE1
GND
7
5
VEN
CPLIN
CPLOUT 6
C4
68 pF
RFOUT
CPLOUT
C5
0.01 µF
RFOUT
C3
C6
RFIN
VCC
GND
GND
VBATT
Figure 13: Evaluation Board Schematic
C2
C1
C4
CPLOUT
GND
GND
VMODE2
C5
VMODE1
VEN
C6
2.2 µF
CPLIN
Figure 14: Evaluation Board Layout
Data Sheet - Rev 2.0
10/2009
9
AWU6601
The AWU6601 power amplifier module is based on
ANADIGICS proprietary HELP3™ technology. The
PA is designed to operate up to 17 dBm in the low
power mode, thus eliminating the need for three gain
state, while still maintaining low quiescent current
and high efficiency in low and medium power levels.
The PA can still be operated as 3 gain state device
if the customer chooses to. The directional “daisy
chainable” coupler is integrated within the PA module,
therefore there is no need for external couplers.
AWU6601 requires only two calibration sweeps for
system calibration, thus saving calibration time.
Figure 16 shows one application example on mobile
board. C1 and C2 are RF bypass caps and should
be placed nearby pin 1 and pin 10. Bypass caps
C9 and C5 may not be needed. Also a “T” matching
topology is recommended at PA RFIN and RFOUT
ports to provide matching between input TX Filter and
Duplexer / Isolator.
The AWU6601 has an integrated voltage regulator,
which eliminates the need for an external constant
voltage source. The PA is turn on/off is controlled
by VEN pin. A single VMODE control logic (VMODE1) is
needed to operate this device.
31.5
mA Average
Current
over Current
DG09 Profile
Figure
15: PDF
and
500
0.150
0.140
DG09 PDF
0.130
AWU6601 (mA)
0.120
400
0.110
350
0.100
DG09 PDF
The DG09 power distribution (fig 15) highlights the
need to improve the current consumption in low and
medium power level. The AWU6601 is designed to
operate up to 17 dBm in the low power mode with
very low quiescent current. Current consumption for
AWU6601 is also plotted in the figure 5.
450
300
0.090
0.080
250
0.070
200
0.060
0.050
150
0.040
100
0.030
0.020
50
0.010
0.000
0
-60
-50
-40
-30
-20
-10
0
10
20
Antenna Power (dBm)
VBATT
C6
GND
C1
GND
RFIN
C7
C8
TX filter
L2
BB
VBATT
VCC
RFIN
RFOUT
VMODE2 (N/C)
CPL IN
VMODE1
C9
GND
C2
GND
at slug
VEN
GND
GND
C4
L1
50Ω
GND
GND
GND
PA_R1
PA_R0
PA_0N
To
Detector
C5
GND
Figure 16: Typical Application Circuit
10
Data Sheet - Rev 2.0
10/2009
RFOUT
Duplexer
CPLOUT
(N/C)
C10
30
AWU6601 Current (mA)
HELP3
AWU6601
PACKAGE OUTLINE
Figure 17: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Pin 1 Identifier
Date Code
YY=Year; WW=Work week
6601R
Part Number
LLLLNN
YYWWCC
Lot Number
Country Code (CC)
Figure 18: Branding Specification - M45 Package
Data Sheet - Rev 2.0
10/2009
11
AWU6601
PCB AND STENCIL DESIGN GUIDELINE
Figure 19: Recommended PCB Layout Information
12
Data Sheet - Rev 2.0
10/2009
AWU6601
COMPONENT PACKAGING
Pin 1
Figure 20: Tape & Reel Packaging
Table 8: Tape & Reel Dimensions
PACKAGE TYPE
TAPE WIDTH
POCKET PITCH
REEL CAPACITY
MAX REEL DIA
3 mm x 3 mm x 1 mm
12 mm
4 mm
2500
7"
Data Sheet - Rev 2.0
10/2009
13
AWU6601
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
AWU6601RM45Q7
-30 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel
Surface Mount Module
AWU6601RM45P9
-30 oC to +90 oC
RoHS Compliant 10 Pin
3 mm x 3 mm x 1 mm Partial Tape and Reel
Surface Mount Module
COMPONENT PACKAGING
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: [email protected]
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
14
Data Sheet - Rev 2.0
10/2009
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