CREE C460EZ1400-S80000-2 Ezbright led technology conductive epoxy, solder paste or preforms, or flux Datasheet

Cree® EZ1400™ Gen II LEDs
Data Sheet
CxxxEZ1400-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting, projection displays and camera flash.
FEATURES
APPLICATIONS
●
●
EZBright LED Technology
»
800 mW min. @ 1000 mA - 450 & 460 nm
General Illumination
»
Aircraft
»
Decorative Lighting
Eutectic Attach
»
Task Lighting
●
Low Forward Voltage
Dielectric Passivation across Epi Surface
»
Outdoor Illumination
●
●
Lambertian Radiation
●
Conductive Epoxy, Solder Paste or Preforms, or Flux
●
White LEDs
●
Projection Displays
●
Automotive
●
Camera Flash
CxxxEZ1400-Sxx000-2 Chip Diagram
Die Cross Section
Top View
.CPR3EK Rev
Data Sheet:
1380 x 1380 μm
Bottom View
Anode (+)
AuSn
Mesa (Junction)
1350 x 1350 μm
Thickness
170 μm
Cathodes (-)
150 x 150 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Note 1
CxxxEZ1400-Sxx000-2
DC Forward Current
1500 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
1500 mA
LED Junction Temperature
145°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +125°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 1000 mA
Part Number
Forward Voltage (Vf, V)
Note 2
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ1400-Sxx000-2
3.3
3.7
4.3
2
20
C460EZ1400-Sxx000-2
3.3
3.7
4.3
2
21
Mechanical Specifications
CxxxEZ1400-Sxx000-2
Description
Dimensions
Tolerance
P-N Junction Area (μm)
1350 x 1350
± 35
Chip Area (μm)
1380 x 1380
± 35
170
± 25
Chip Thickness (μm)
Top Au Bond Pad (μm) - Qty. 2
150 x 150
± 25
3.0
± 1.5
1380 x 1380
± 35
3.0
± 1.5
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
Notes:
Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 1000 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an
integrating sphere using Illuminance E.
1.
2.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.
2
CPR3EK Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Standard Bins for CxxxEZ1400-Sxx000-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ1400-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1400-0xxx-2)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 1000 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
Radiant Flux
C450EZ1400-S80000-2
C450EZ1400-0217-2
C450EZ1400-0218-2
C450EZ1400-0219-2
C450EZ1400-0220-2
C450EZ1400-0213-2
C450EZ1400-0214-2
C450EZ1400-0215-2
C450EZ1400-0216-2
C450EZ1400-0209-2
C450EZ1400-0210-2
C450EZ1400-0211-2
C450EZ1400-0212-2
C450EZ1400-0205-2
C450EZ1400-0206-2
C450EZ1400-0207-2
C450EZ1400-0208-2
1250 mW
1100 mW
950 mW
800 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
452.5 nm
455 nm
Radiant Flux
C460EZ1400-S80000-2
C460EZ1400-0217-2
C460EZ1400-0218-2
C460EZ1400-0219-2
C460EZ1400-0220-2
C460EZ1400-0213-2
C460EZ1400-0214-2
C460EZ1400-0215-2
C460EZ1400-0216-2
C460EZ1400-0209-2
C460EZ1400-0210-2
C460EZ1400-0211-2
C460EZ1400-0212-2
C460EZ1400-0205-2
C460EZ1400-0206-2
C460EZ1400-0207-2
C460EZ1400-0208-2
1250 mW
1100 mW
950 mW
800 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.
3
CPR3EK Rev. -
465 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
DW Shif
3
2
1
0
Characteristic Curves, TA = 25°C
25
50
75
100
125
150
Junction Temperature (°C)
This is a representative measurement for the EZ1400 LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Relative Light Intensity vs. Junction Temperature
Forward Current vs. Forward Voltage
1.00
Relative Light Intensity (%)
1500
If (mA)
1250
1000
750
500
250
0
0
1
2
3
4
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
25
5
50
75
100
125
150
Junction Temperature (°C)
(V)Forward Current
Relative Intensity Vf
vs.
125%
150%
100%
125%
75%
100%
50%
75%
25%
50%
0%
25% 0
Dominant Wavelength Shift vs. Junction Temperature
Relative Intensity vs. Forward Current
6
5
DW Shift (nm)
% Relative
% Relative
IntensityIntensity
150%
250
500
750
1000
1250
0
250
500
750
3
2
1
1500
If (mA)
0%
4
0
1000
1250
25
1500
50
If (mA)
2
3
1.5
2.5
1
2
0.5
1.5
0
1
-0.5
0.5
0
250
500
750
1000
1250
1500
If (mA)
0
250
500
750
If (mA)
1000
1250
1500
Voltage Shift
Relative Light Intensity
(%) (V)
Shift (nm)
DW ShiftDW
(nm)
Relative
-0.050
Wavelength Shift vs. Forward Current
-1
150
Light Intensity vs. Junction Temperature
1.00
-0.100
0.95
-0.150
0.90
-0.200
0.85
-0.250
0.80
0.75
-0.300
0.70
-0.350
0.65 25
50
75
0.60
25
50
125
150
Junction Temperature (°C)
75
100
125
CPR3EK Rev. -
100
150
Junction Temperature (°C)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.
4
125
0.000
3
2.5
-0.5
100
Voltage Shift vs. Junction Temperature
Wavelength Shift vs. Forward Current
-1
0
75
Junction Temperature (°C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.
5
CPR3EK Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
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